Hitachi, Ltd.

Sony Group Corporation

Agency of Industrial Science and Technology

Sanyo Denki Co., Ltd.

Takayoshi Seki

Katsumi Tokiguchi

Takamichi Aoki

Kensuke Amemiya

Masumi Umezawa

Hideaki Nishiuchi

Isao Hashimoto

Kazuo Mera

Keiji Arimatsu

Shigemitsu Hara

Kazuo Hiramoto

Noriyuki Sakudo

Yasuo Yamashita

Fumiaki Noda

Takamitsu Hae

Fuutarou Ebina

Kazuyoshi Saitou

Hiroyuki Tomita

Hidemi Koike

Tetsunori Kaji

Masato Isogai

Terunori Warabisako

Kiyoshi Miyake

Yasunori Ohno

Yasunori Nakano

Chishin Hori

Kenichi Natsui

Futaro Ebina

Yukio Nakagawa

Koukichi Ouhata

Takumi Endoh

The ion source includes a microwave power supply provided outside main magnetic poles, a radiofrequency waveguide and an antenna configured to introduce a microwave generated by the microwave power supply to a region to which a magnetic field generated by the main magnetic poles is applied, and a magnetic field generation unit provided inside a hole provided in a part of the main magnetic poles and configured to generate a magnetic field in a direction opposite to that of the magnetic field generated by the main magnetic poles. Plasma is generated inside the main magnetic poles by a magnetic field generated by applying the magnetic field generated by the magnetic field generation unit in the opposite direction to the main magnetic field decreased according to a diameter of the hole and the microwave introduced by the radiofrequency waveguide and the antenna.

Ion source, circular accelerator using same, and particle beam therapy system

A sound output device including: an actuator that outputs a driving force in response to a drive signal; a vibrating body that includes a plurality of receiving parts and is vibrated by a driving force transmitted from the actuator; a transmission plate that is provided with a plurality of pressing parts that press the plurality of receiving parts, respectively; a coil spring that applies a biasing force to the transmission plate to press the plurality of pressing parts against the plurality of receiving parts, respectively; and a base body that receives one end face of the actuator, in which the vibrating body is pressed against another end face of the actuator by a biasing force of the coil spring applied via the plurality of pressing parts and the plurality of receiving parts.

Sound output device

In a circular accelerator that applies a radiofrequency wave in a main magnetic field to accelerate charged particle beam while increasing an orbit radius, another radiofrequency wave with a frequency different from the radiofrequency wave used for acceleration is applied to the charged particle beam in order to extract the charged particle beam. Thereby, in the circular accelerator that accelerates charged particle beam while increasing an orbit radius by applying a radiofrequency wave in a main magnetic field, the high precision control on extraction of the charged particle beam from the circular accelerator is achieved.

Circular accelerator, particle therapy system with circular accelerator, and method of operating circular accelerator

In a magnetic device, on faces opposite to a middle planebetween an upper magnetic poleand a lower magnetic pole, recesses, andand projections, andare alternately placed along a beam circling direction. In the projections, and, angle widths &#x3b8; of the projections, andwhen viewed from the center Oof a beam closed orbit is narrowed as beam energy is increased. On the outer circumferential region of the recesson the upper magnetic poleand the lower magnetic pole, the inlet of an extraction channelthat extracts a beam accelerated to a predetermined energy to outside an acceleratoris provided.

Particle beam accelerator and particle therapy system

Ion beams are efficiently extracted with an accelerator that includes a circular vacuum container including a pair of circular return yokes facing each other. Six magnetic poles are radially disposed from the injection electrode at the periphery thereof in the return yoke. Six recessions are disposed alternately with the respective magnetic poles in the circumferential direction of the return yoke. In the vacuum container, a concentric trajectory region, in which multiple beam turning trajectories centered around the injection electrode are present, is formed, and an eccentric trajectory region, in which multiple beam turning trajectories eccentric from the injection electrode are present, is formed around the region. In the eccentric trajectory region, the beam turning trajectories are dense between the injection electrode and the inlet of the beam extraction path. Gaps between the beam turning trajectories are wide in a direction 180&#xb0; opposite to the inlet of the beam extraction path.

Accelerator and particle beam irradiation system

An acceleratorincludes a circular vacuum container including circular return yokesA,B. An injection electrodeis disposed closer to an inlet of a beam extraction pathin the return yokeB than a central axis C of the vacuum container. Magnetic polesA toF are radially disposed from the injection electrodeat the periphery of the injection electrodein the return yokeB. RecessionsA toF are disposed alternately with the magnetic polesA toF in the circumferential direction of the return yokeB. In the vacuum container, a concentric trajectory region, in which multiple beam turning trajectories centered around the injection electrodeare present, is formed, and an eccentric trajectory region, in which multiple beam turning trajectories eccentric from the injection electrodeare present, is formed around the region.

The accelerator includes a circular vacuum container which contains a circular return yoke. With respect to the central axis of the vacuum container, an incidence electrode is arranged towards the entrance of a beam emission path inside of the return yoke. Inside of the return yoke, electrodes are arranged radially from the incidence electrode in the periphery of the incidence electrode. Recesses are arranged alternately with the electrodes in the circumferential direction of the return yoke. In the vacuum container, an orbit-concentric region is formed in which multiple beam orbits centered on the incidence electrode are present, and, in the periphery of said region, an orbit-eccentric area is formed in which multiple beam orbits eccentric to the incidence electrode are present. In the orbit-eccentric region, the beam orbits between the incidence electrode and the entrance to the beam emission path are denser.

A sensor for motor includes: a detected plate mounted to a rotating shaft of a motor, the detected plate including a plurality of rod-shaped portions having different lengths from one another, the plurality of rod-shaped portions radially projecting from the rotating shaft; a detecting member configured to output a signal having a waveform that changes according to the rod-shaped portions passing through a front of the detecting member; and a movable member that holds the detecting member.

Sensor for motor

A wafer holder for holding a wafer includes a wafer holder base, a wafer fixing part, holder pins, a bearing, a housing, and a coil spring. The wafer fixing part is fixed to an outer circumference of a wafer holder. The holder pins are arranged to face the wafer fixing part. The holder pin is rotatably supported by the bearing. The holder pins are movably supported along the diameter direction of the wafer holder base by the coil spring. In the process of holding a side of the wafer with the holder pins, when force from the wafer works on the holder pins, the holder pins are rotated with a Z axis as a center, thus reducing frictional force between the holder pin and the wafer. Accordingly, it is possible to prevent particle generation from holding an implanting object.

Ion implanter

An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.

Ion implanting apparatus capable of preventing discharge flaw production

A charge-up prevention method for use when ion beams are implanted simultaneously with electrons, prevents charge-up on a plurality of objects to be irradiated. A supply quantity of electrons is controlled while directly measuring the potential of the objects that are to be irradiated, and an ion implanting apparatus which irradiates ion beams onto objects which are arranged in a circular shape and moving while rotating, includes an electron source irradiating simultaneously ion beams and electrons for charge prevention, and a controller for controlling a supply quantity of electrons while directly measuring the potential of objects to be irradiated.

Charge-up prevention method and ion implanting apparatus

An ion source comprises a discharge chamber; a wave guide transmitting microwave to generate plasma within said discharge chamber; and a matching tube, located between the discharge chamber and the wave guide, the cross-sectional form of which is tapered in the width thereof in the direction of propagation of the microwave.

Ion source and an ion implanting apparatus using it

An ion implanter for implementing ion implantation using mass-separated ions using a limited energy of less than 10 keV, locates the decelerator between the ion source and the mass separator, and the beam transport space provided between the ion source and the decelerator is maintained at a higher negative voltage so as to decelerate the ion beam in combination, ensuring a large-current ion beam in excess of 1 mA to be maintained on the surface of a target.

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Hitachi, Japan

Takayoshi Seki