Tokyo Ohka Kogyo Co., Ltd.

Fuji Photo Film Company, Limited

Fujifilm Corporation

Tokyo Institute of Technology

Dsp Gokyo Food & Chemical Co., Ltd.

Takayoshi Mori

Takahiro Dazai

Tomoyuki Hirano

Sanae Furuya

Daiju Shiono

Hiroaki Shimizu

Junichi Tsuchiya

Ryoji Watanabe

Tsuyoshi Nakamura

Yoichi Hori

Ryoichi Takasu

Kyoko Ohshita

Rikita Tsunoda

Hiroshi Kawakami

Hiroyuki Mifune

Yoshiyuki Utsumi

Hideo Ikeda

Akiya Kawaue

Mikio Ihama

Kazufumi Sato

Ken Miyagi

Kazutaka Takahashi

Tasuku Matsumiya

Toshihiro Nishikawa

Daichi Takaki

Takahiro Shimizu

Masahito Yahagi

Genichi Furusawa

Daisuke Kawana

Tomoya Kumagai

Yusuke Suzuki

Yasushi Washio

Kazuishi Tanno

Nobuyuki Haraguchi

Toshiaki Hato

Mitsuo Hagihara

Yasushi Kuroiwa

Teruaki Hayakawa

Kenta Suzuki

Komei Hirahara

Yasushi Miyamoto

Hironori Kinoshita

Lei Dong

Sumitsugu Kisanuki

Masaaki Sugi

Kyoko Oshita

Tomonari Sunamichi

A resin composition for forming a phase-separated structure containing a block copolymer having a first block and a second block, in which the first block is formed of a constituent unit represented by Formula (b1), the second block is formed of a constituent unit represented by Formula (b2m) and a random copolymer having a constituent unit represented by Formula (b2g), and a ratio of a volume of the first block is 20% to 80% by volume. In the formulas, Ris a hydrogen atom or an alkyl group, Ris a hydrogen atom or a methyl group, Ris an alkyl group which may have a silicon atom, a fluorine atom, a carboxy group, an amino group, a hydroxy group, or a phosphoric acid group, Ris a linear or branched alkylene group having 1 to 10 carbon atoms, which may have a hydroxy group, and Ris a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms 

Resin composition for forming phase-separated structure, method for producing structure including phase-separated structure, and block copolymer

A method for forming a resist pattern including forming a first contact hole pattern including a hole portion and a hole-unformed portion, which includes alkali developing the exposed positive-type resist film; preparing a structure including the first contact hole pattern and a first layer which covers the first contact hole pattern, which includes forming a first layer by applying a solution including an acid or a thermal acid generator onto a support on which the first contact hole pattern is formed; forming organic solvent-soluble and organic solvent-insoluble regions on the hole-unformed portion, which includes heating the structure; and forming a second contact hole pattern on the hole-unformed portion, which includes developing the heated structure with an organic solvent.

Method for forming resist pattern

A method of forming a resist pattern including forming a resist film on a support using a resist composition; subjecting the resist film to exposure; and forming a resist pattern by developing the resist film having undergone the exposure, in which the developing is performed using a developer which contains a basic compound represented by the following formula (1) and tetrabutylammonium hydroxide, and in which the concentration of tetrabutylammonium hydroxide is equal to or greater than 2.5% by mass and less than 2.8% by mass: 

Resist pattern forming method and developer for lithography

A method of forming a resist pattern including forming a first resist pattern on a substrate; applying a cross-linking composition so as to cover the first resist pattern; heating the covered first resist pattern and crosslinking an isocyanate group in the cross-linking composition with the first resist pattern; and developing the covered first resist pattern, wherein the cross-linking composition includes a blocked isocyanate compound having a protected isocyanate group.

Method of forming resist pattern

A method of forming a resist pattern, including: step A in which a first resist pattern is formed on a substrate, step B in which a basic composition is applied to cover the first resist pattern, step C in which a base contained in the basic composition and the first resist pattern are neutralized to form a developing solution insoluble region on a surface of the first resist pattern, and step D in which the covered first resist pattern is developed, the basic composition containing a basic component, and the basic component containing a polymeric compound having a structural unit (x0) represented by general formula (x0-1) (R is H, Calkyl group, Chalogenated alkyl group; Vxis divalent hydrocarbon group having ether bond or amide bond or divalent aromatic hydrocarbon group; Yxis single bond or divalent linking group; Rxis substituent having nitrogen atom). 

A method of forming a resist pattern, including: a step A in which a positive resist composition is applied to a substrate to form a positive resist film, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern; a step B in which a solution containing an acid or a thermoacid generator is applied to the substrate whereon the first resist pattern is formed, so as to cover the first resist pattern, to form a structure having the first resist pattern and a first layer covering the first resist pattern; a step C in which the structure is heated and the solubility of the first resist pattern in an organic solvent is changed under action of the acid or under action of acid generated from the thermoacid generator; and a step D in which the structure after heating is developed with the organic solvent to remove a region of the first resist pattern other than the region of the first resist pattern where the solubility in the organic solvent is changed, so as to form a second resist pattern.

Method for forming resist pattern, resist pattern splitting agent, split pattern improving agent, resist pattern splitting material, and positive resist composition for forming split pattern

A resist pattern formation method with enhanced resolution and process margin in forming a resist pattern. The method includes using a resist composition containing a high-molecular weight compound having a constituent unit represented by the general formula (a0-1) and conducting patterning by negative type development with a developing solution containing an organic solvent to forma resist pattern in which R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Varepresents a divalent hydrocarbon group; nis an integer of 0 to 2; Rrepresents a chain or cyclic aliphatic hydrocarbon group; Rrepresents a group for forming a monocyclic group together with the carbon atom to which Ris bonded; and Rrepresents an optionally substituted cyclic group.

Method for forming resist pattern and resist composition

A positive resist composition including a base component, an acid-generator component and a fluorine-containing polymer component (F) in a specific amount, the fluorine-containing polymer component (F) including a fluorine-containing polymer (F1) consisting of a structural unit (F-1) represented by general formula (F-1) (Rrepresents a hydrogen atom or a methyl group, Rand Rrepresent a hydrogen atom, an alkyl group or a fluorinated alkyl group, Rrepresents a fluorine atom or a fluorinated alkyl group, and Rrepresents an alkyl group or a fluorinated alkyl group) or a fluorine-containing copolymer (F2) containing the structural unit (F-1) and at least one structural unit selected from the group consisting of a structural unit (F-2) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group and a structural unit (F-3) represented by general formula (F-3) (Rrepresents a hydrogen atom or a methyl group, Z represents a single bond or a divalent linking group, and r represents an integer of 0 to 2). 

Positive resist composition and method of forming resist pattern

What is provided is a positive-type photoresist composition containing an acid generator (A) capable of generating an acid when irradiated with an active ray or radiation, a resin (B) whose solubility in alkali increases under the action of acid, and an organic solvent (S), the photoresist composition further containing an alkali-metal salt (C).

Positive-type photoresist composition, photoresist laminate, method for producing photoresist pattern, and method for producing connecting terminal

A resist composition contains a high-molecular weight compound which has a partial structure represented by a general formula (a0-r-1) and has a constituent unit represented by a general formula (a0-1). In the formula (a0-r-1), Yrepresents a divalent linking group; each of Rand Rrepresents a group having 0 to 20 carbon atoms, which is not a fluorine atom, and either Ror Rmay form a ring with Y; m represents an integer of 1 or more; and Mrepresents an m-valent organic cation. In the formula (a0-1), R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Yarepresents a single bond or a divalent linking group; Xrepresents a sulfur atom or an oxygen atom; and Rarepresents an optionally substituted cyclic group, chain alkyl group or chain alkenyl group.

Resist composition and resist pattern forming method

A sulfonium salt compound represented by the following general formula (I): where Rand Reach denote the same or a different alkyl group having 1 to 18 carbon atoms, Rand Reach denote the same or a different alkyl group having 1 to 10 carbon atoms, Xdenotes a sulfonate anion or a carboxylate anion, and the substituents denoted by RO and RO are each located at an arbitrary position selected from the 2-position to the 8-position of the naphthyl group.

Sulfonium salt, method for producing the same, and photoacid generator

A resist composition for immersion exposure, including a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, an acid generator component (B) that generates acid upon exposure, and a fluorine-containing compound (C) represented by a general formula (c-1) shown below that is decomposable in an alkali developing solution: wherein Rrepresents an organic group which may contain a polymerizable group, with the proviso that said polymerizable group has a carbon-carbon multiple bond, and the carbon atoms forming the multiple bond are not directly bonded to the carbon atom within the &#x2014;C(&#x2550;O)&#x2014; group in general formula (c-1); and Rrepresents an organic group having a fluorine atom.

Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound

A resist composition for immersion exposure, including a base component that exhibits changed solubility in an alkali developing solution under action of acid, an acid generator component that generates acid upon exposure, and a fluorine-containing compound represented by a general formula (c-1) that is decomposable in an alkali developing solution: wherein Rrepresents an organic group which may contain a polymerizable group, with the proviso that said polymerizable group has a carbon-carbon multiple bond, and the carbon atoms forming the multiple bond are not directly bonded to the carbon atom within the &#x2014;C(&#x2550;O)&#x2014; group in general formula (c-1); and Rrepresents an organic group having a fluorine atom.

A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of an acid, and an acid generator component (B), wherein the base component (A) includes a polymeric compound (A0) containing a structural unit (a0) represented by the general formula (a0-1) shown below: (wherein, Rrepresents a hydrogen atom, an alkyl group or a halogenated alkyl group; Rrepresents a bivalent linking group containing at least one kind of polar groups selected from the group consisting of &#x2014;O&#x2014;, &#x2014;C(&#x2550;O)&#x2014;, &#x2014;C(&#x2550;O)&#x2014;O&#x2014;, a carbonate linkage (&#x2014;O&#x2014;C(&#x2550;O)&#x2014;O&#x2014;), &#x2014;S&#x2014;, &#x2014;S(&#x2550;O)&#x2014;, &#x2014;S(&#x2550;O)&#x2014;O&#x2014;, &#x2014;NH&#x2014;, &#x2014;NR&#x2014; (wherein, Rrepresents an alkyl group or an acyl group), and &#x2014;NH&#x2014;C(&#x2550;O)&#x2014;; and Rrepresents a cyclic group containing a sulfonyl group within the ring skeleton).

Resist composition, method of forming resist pattern, polymeric compound, and compound

There is provided a positive resist composition including a resin component (A) which displays increased solubility in an alkali developing solution under action of acid, and an acid generator component (B) which generates an acid upon exposure, wherein the resin component (A) includes a polymer compound (A1) containing a structural unit (a0) represented by a general formula (a0-1) shown below, and a structural unit (a1) derived from an acrylate ester which has an acid dissociable, dissolution inhibiting group: (in the formula (a0-1), R represents a hydrogen atom, a lower alkyl group, or a halogenated lower alkyl group; two of R' each independently represents a hydrogen atom, a lower alkyl group, or an alkoxy group of 1 to 5 carbon atoms; X represents an alkylene group of 1 to 5 carbon atoms, an oxygen atom, or a sulfur atom.).

Polymer compound, positive resist composition, and method of forming resist pattern

Growing community of inventors

Kawasaki, Japan

Takayoshi Mori