Fujitsu Corporation

Socionext Inc.

Fujitsu Semiconductor Limited

Takayoshi Minami

Tomoharu Awaya

Tomoyuki Yamada

Shigetoshi Takeda

Koji Banno

Fumio Ushida

Yuji Setta

Osamu Tsuboi

Masato Matsumiya

Kuninori Kawabata

Satoru Asai

Toshimi Ikeda

Morimi Osawa

Toshio Sawano

A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.

Semiconductor device and method of producing semiconductor device

Semiconductor device, moisture-resistant frame, groove and method of producing semiconductor device

A method for creating a pattern on a photomask includes steps of recognizing a space between main patterns by using pattern data which indicate the main patterns to be adjacently transferred onto a wafer, determining a 1st rule about arrangement of an assist pattern on the photomask, the assist pattern being adjacent to the main patterns and not being transferred onto the wafer, estimating a depth of focus in the presence of the assist pattern among the main patterns, determining a 2nd rule about arrangement of the assist pattern on the photomask to improve the depth of focus in the presence of the 1st assist pattern among the main patterns in a group having one or more number of appearance times of the space between main patterns, and correcting the assist pattern on the photomask using the assist pattern data on the basis of the 2nd rule.

Creating method of photomask pattern data, photomask created by using the photomask pattern data, and manufacturing method of semiconductor apparatus using the photomask

A double exposure process is performed using a halftone phase shift mask () including gate patterns (), assist patterns () and () with different resoluble line widths, and an assist pattern () with a line width equal to or smaller than a resolution limit which are respectively inserted into portions in each of which a distance between the gate patterns () is large, and a Levenson phase shift mask () including shifter patterns () corresponding to the gate patterns () of the photomaskOn this occasion, the assist patterns (), (), and () are erased and only the gate patterns () are transferred. Consequently, when patterns are transferred by the double exposure process, a common depth of focus of the patterns is improved and highly uniform line widths are realized, which makes it possible to manufacture a highly reliable semiconductor device.

Photomask and manufacturing method of semiconductor device

The semiconductor device comprises a gate interconnectionincluding a gate electrode formed over a semiconductor substratewith a gate insulation filmformed therebetween; a first source/drain diffused layerformed near the end of the gate interconnection; a second source/drain diffused layerformed remote from the gate interconnectionand the first source/drain diffused layer; and an insulation filmformed over the gate interconnection, the first source/drain diffused layerand the second source/drain diffused layer, and having a groove-shaped openingformed in, which integrally exposes the gate interconnection, one of the first source/drain diffused layer, and one of the second source/drain diffused layer; and a contact layerburied in the groove-shaped opening. The groove-shaped openingsfor the contact layersto be buried in can be formed without failure. Accordingly, it is possible to provide a semiconductor device which can realize the micronization without reliability decrease and fabrication yield decrease.

Semiconductor device and method for fabricating the same

A resist pattern of a resist film is formed by exposing the resist film using a gate electrode forming mask (a Levenson phase shift mask), and developing the resist film. An antireflection film is etched using the resist pattern as an etching mask, and the resist pattern and the antireflection film are trimmed. The manner of this trimming is not to etch a hard mask made of an inorganic material, but to etch the resist pattern and the antireflection film made of an organic material. Since a region consistent with a wiring pattern of the hard mask is covered by the resist pattern completely, breaking down and retraction of the wiring are prevented.

Method of manufacturing semiconductor device

First and second areas are defined on the substrate. A partial area of a resist film formed on the surface of the substrate is exposed to light having a first intensity, the partial area corresponding to an area above first area, and the light having the first intensity having transmitted through a pattern of a first reticle to be transferred. The resist film above the second area of the substrate is exposed to light having a second intensity weaker than the first intensity. The resist film above the first and second areas is exposed to light having a third intensity weaker than the first intensity, the light having the third intensity having transmitted through a pattern of a second reticle to be transferred. The exposed resist film is developed.

Semiconductor device manufacture method with exposure process using small exposure amount, and reticle set for semiconductor device manufacture

A semiconductor device characterized by comprising a first insulating film formed on the semiconductor substrate, a first wiring or mark formed on the first insulating film, an electrically isolated pattern formed under the first insulating film and below the first wiring or mark, a hole formed in the first insulating film to connect the first wiring or mark and the electrically isolated pattern, and a second insulating film for covering the first wiring or mark.

Growing community of inventors

Kawasaki, Japan

Takayoshi Minami