Mitsubishi Electric Corporation

Takayoshi Miki

Yukio Nakashima

Hisanori Yamasaki

Yasushi Nakayama

Shigeru Hasegawa

Takeshi Oi

Kazuhiro Tada

Shota Morisaki

Kohei Onda

Shiori Idaka

Takeshi Tanaka

Keisuke Kimura

Sho Kato

Yasuhiro Shiraki

Naoki Nishio

Takeshi Horiguchi

Yoshiko Tamada

Hiroshi Nakatake

Tetsuo Sugahara

Kosuke Nakano

Tomohiro Kobayashi

Kenta Uchida

Shinsuke Kadoi

Keisuke Iwasawa

Tomonobu Mihara

Shinya Kurachi

Yuji Nemoto

A gate drive circuit includes a resistor, a current detector that detects a current flowing through the resistor, and a gate driver. The gate driver applies an electric signal between a gate terminal and a source terminal of a module to drive a switching semiconductor element. One end of the resistor is connected to a drain terminal, the opposite end of the resistor is connected to one end of the current detector, and the opposite end of the current detector is connected to the gate driver. The current detector outputs a detection value of the current to the gate driver, and the gate driver changes a gate drive speed of the switching semiconductor element according to the detection value.

Gate drive circuit and power conversion device

A control unit of a gate drive circuit applies, between a gate and a source of a switching element, a first voltage so as to turn on the switching element. After transference of drain current of the switching element, the control unit interrupts the first voltage and applies, between the gate and the source of the switching element, a second voltage that is lower than the first voltage and that is higher than a mirror voltage of the switching element. When no short-circuit current is flowing to the switching element, the control unit interrupts the second voltage and applies, between the gate and the source of the switching element, a third voltage higher than the second voltage.

Gate drive circuit

A power converting device includes upper-arm and lower-arm gate drive circuits which respectively drive upper-arm and lower-arm semiconductor switching elements and which respectively include upper-arm and lower-arm time point detection circuits for detecting time points at which voltages between main terminals of the upper-arm and lower-arm semiconductor switching elements have crossed respective reference voltages, and a controller including a calculator which calculates a change time point of an inverter output voltage and a PWM command pulse generator which generates, on the basis of information about the time point calculated by the calculator, a PWM command pulse to be given to the upper-arm gate drive circuit and the lower-arm gate drive circuit.

Power converting device

An electric vehicle control device includes a first inverter controlling a first group defined by induction motors, and a second inverter controlling a second group defined by induction motors. The first inverter and the induction motors of the first group are connected to each other by a first conductor. The second inverter and the induction motors of the second group are connected by a second conductor. A first length is equal to or less than three times the average value of a second length and a third length. The first length is an inter-center distance between the first conductor and the second conductor, the second length is the maximum length of a conductor portion of the first conductor in the cross section of the first conductor, and the third length is the maximum length of a conductor portion of the second conductor in the cross section of the second conductor.

Electric vehicle control device

A parallel driving device that drives parallel-connected semiconductor elements includes a control unit and a gate driving circuit. The control unit detects a temperature difference between the semiconductor elements on the basis of detected values by temperature sensors that detect temperatures of the individual semiconductor elements. The control unit generates a control signal for changing the timing at which to turn on a first semiconductor element specified from the semiconductor elements on the basis of the temperature difference. The gate driving circuit generates a first driving signal for driving the semiconductor elements, and generates a second driving signal that is the first driving signal delayed on the basis of the control signal, and applies the second driving signal to the first semiconductor element.

Parallel driving device and power conversion device

A power semiconductor module includes at least one upper arm provided between a positive electrode line and a node and including a power semiconductor device and a freewheeling diode connected in parallel, at least one lower arm provided between a negative electrode line and the node and including a power semiconductor device and a freewheeling diode connected in parallel, and a snubber circuit provided between the positive electrode line and the negative electrode line. The snubber circuit includes a snubber capacitor and a snubber resistor connected in series. At least one control terminal outputs a voltage representing the temperature of the snubber resistor or a voltage related to the temperature of the snubber resistor to a driver that drives the power semiconductor device.

Power semiconductor module and power conversion apparatus including the same

A power conversion device includes six semiconductor modules. Each of the six semiconductor modules includes a first terminal (P), a second terminal (N), and a third terminal (AC) on its surface. The first terminals of two semiconductor modules configuring a semiconductor module group of the same phase are arranged to be opposed to each other. A plurality of semiconductor module groups are arranged in a direction perpendicular to an arrangement direction of two semiconductor modules in the semiconductor module group.

Power conversion device

A power converter includes: a power converter main circuit that includes semiconductor switching elements; gate drive circuits driving the semiconductor switching elements, respectively; and one or a plurality of impedance element groups connected between at least one pair of the gate drive circuits. At least one of the gate drive circuits includes a detector that detects a voltage across the impedance element group, and changes the driving speed of the semiconductor switching elements in accordance with an output of the detector.

Power converter

A power converter includes a power module having a positive electrode of a positive-side switching device connected to a first terminal, a negative electrode of the positive-side switching device and a positive electrode of a negative-side switching device connected to a second terminal, and a negative electrode of the negative-side switching device connected to a third terminal. The first terminal is connected to a P terminal of a filter capacitor via a first conductor of a bus bar that is a parallel flat plate conductor. The third terminal is connected to an N terminal of the filter capacitor via a second conductor of the bus bar. The bus bar as the parallel flat plate conductor has an L shape. The second terminal is connected to a load via a conductor bar physically different from the bus bar.

Power converter with a parallel flat plate conductor electrically connected with a capacitor and a power module

A power conversion apparatus includes a main capacitor to store therein DC power, and an inverter circuit to convert the DC power stored in the main capacitor to AC power. The main capacitor and a power semiconductor element that constitutes the inverter circuit are connected to each other by a P-side common wire through which a switching current flows. A switching-current shunt component is connected in parallel to the P-side common wire.

Power conversion apparatus and power semiconductor module

A power semiconductor module having switching elements includes: a collector main terminal and a collector auxiliary terminal connected to a collector potential of the switching element; a gate auxiliary terminal connected to a gate potential of the switching element; and an emitter main terminal and an emitter auxiliary terminal connected to an emitter potential of the switching element. A power converter includes a voltage dividing circuit board that generates a divided voltage obtained by dividing a voltage between the collector auxiliary terminal and the emitter auxiliary terminal and transmits to a gate driving circuit. The voltage dividing circuit board is electrically connected to the collector auxiliary terminal and the emitter auxiliary terminal. A gate driving circuit changes a driving speed of the switching element according to the divided voltage.

A driving circuit including: a voltage detector that detects the sum voltage of a positive bias voltage and a negative bias voltage, the negative bias voltage or the positive bias voltage; and a switching element that is connected to the control terminal of a power element and the negative side of a negative-voltage power supply; wherein, when the value of the detection target voltage becomes lower than a voltage setting value or when a voltage between the control terminal and the reference terminal in the power element increases in a state where the value of the detection target voltage is lower than the voltage setting value, the voltage detector turns on the switching element to thereby supply, between the above terminals in the power element, a voltage of 0V or lower.

Power semiconductor element driving circuit

To reduce radiation noise generated when a semiconductor device in a power unit performs switching, a core is provided outside the power unit. The closer the core is disposed to the semiconductor device that is generating the radiation noise, the greater the effect of reducing the radiation noise is obtained. However, since there has been no space to provide the core inside the power unit, there has been a limitation in the reduction of radiation noise. The invention provides a power unit including a core in the interior thereof. In order to install a first core inside the power unit, a first output-side conductor bar, a second output-side conductor bar, and a third output-side conductor bar are connected to an output of an inverter include a first bundle portion. The first bundle portion passes through a first penetrating opening of the first core provided inside the power unit.

Power unit and power conversion apparatus

In a power converter including at least one bridge circuit configured to have upper and lower arms in which a first power semiconductor device and a second power semiconductor device are connected in series, a first gate driving circuit that supplies a charge to the first power semiconductor device of an upper arm to drive the first power semiconductor device monitors a voltage developed by an output inductor between a connection end between the first power semiconductor device and the second power semiconductor device and a load, and performs control to protect the first power semiconductor device based on a value of the monitored voltage.

First to sixth switching elements forming a power conversion circuit for one phase in a three-level power converting apparatus include transistor elements and diode elements connected in reverse parallel to the transistor elements. Second, third, fifth, and sixth transistor elements are configured by MOSFETs that enable an electric current to flow in two directions.

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Tokyo, Japan

Takayoshi Miki