Sony Corporation

Takayoshi Mamine

Takeshi Matsushita

Takuro Yamamoto

Hisao Hayashi

Nobuyuki Matsuzawa

Motohiro Furuki

Noriyuki Kishii

Isamu Nakao

Kazuo Nishiyama

Yasuhiro Sakamoto

Tatsuji Oda

Osamu Yoneyama

Atsumi Tsujimoto

Disclosed is a bioassay method in which, by controlling the electric field formation in the reaction region where an interaction between substances, such as a hybridization, is performed, the efficiency of the interaction can be improved. Also disclosed is a bioassay apparatus in which the method can be favorably carried out. The method includes at least a step of turning on/off the electric field formation by the electric field-forming means E at a predetermined timing.

Bioassay method, bioassay device, and bioassay substrate

A bioassay substrate () takes a flat-plate shape in which the principal surface similar to that of optical disc such as CD, etc. is circular. At the center of the substrate (), there is formed a center hole () into which a chucking mechanism for rotation and holding is inserted. The substrate () is rotationally driven with the center hole () being as center. On the substrate (), there are formed two regions of a recording region () and a reaction region () which are formed in concentrical form in a radial direction. The recording region () is a region where, similarly to the optical disk information recording medium, laser beams are irradiated so that recording/reproduction of information is optically performed. The reaction region () is a region serving as the filed of mutual reaction between probe DNA (nucleotide chain for detection) and sample DNA (marked or labeled nucleotide chain), in concrete terms, the field of hybridization reaction.

Bioassay substrate and bioassay device and method

Disclosed herein is a method and apparatus for determining the base sequence of a nucleic acid molecule by cleaving a nucleic acid molecule of interest while controlling the cleavage site, measuring the change in mass which occurs in the nucleic acid molecule after the cleavage step, and acquiring the base information of the cleaved nucleic acid molecule from the data about the change in mass. The method and apparatus are based on the principle which is entirely different from that used for the conventional technique.

Method and apparatus for determining base sequence of nucleic acid molecule

Semiconductor manufacturing apparatus and semiconductor device manufacturing method

A short-wavelength electromagnetic-radiation generator includes a pair of concave reflectors, a laser source for emitting a laser beam so as to be incident between the concave reflectors, and an electron beam generator for emitting an electron beam so as to be incident on the laser beam, which is repeatedly reflected and converged.

Short-wavelength electromagnetic-radiation generator

A semiconductor laser device having a stripe light emission region formed in an active layer, a bent portion formed in the active layer on a light end portion of the light emission region in a range of approximately the width of the light emission region, and a flat portion formed in the active layer the width of which is made larger than that of the light emission region inside of the end portion of the light emission region.

Laser device formed with a stripe light emission region

A method of an iron Fe ion implantation into a semiconductor substrate of an N-type conductivity is disclosed. The method comprises the steps of implanting Fe ions into an N-type semiconductor substrate from its one surface with the dose amount of 10.sup.10 to 10.sup.15 cm.sup.-2 and heat-treating the semiconductor substrate with Fe ions at 850.degree. to 1250.degree. C. to control the lifetime of the minority carrier in the substrate and hence to reduce the temperature dependency of the lifetime.

Fe Ion implantation into semiconductor substrate for reduced lifetime

A semiconductor photovoltaic device is comprised of 2n layers of alternating p-type and n-type material having respective PN junctions between adjacent layers, wherein n is an integer greater than 1. Each layer has a thickness which is less than the diffusion length of a minority carrier therein. The PN junctions are excited by light which is incident on the device to thereby cause majority carriers to be accumulated in the respective layers so as to forward bias all of the PN junctions. As a result of this forward biasing, minority carriers are injected across a first PN junction fr0m one layer into an adjacent layer and then traverse the next PN junction into the next succeeding layer. The photovoltaic device thus is adapted to supply a voltage and a current to a load.

Multi-layer semiconductor photovoltaic device

A polycrystalline silicon layer provides an antireflective coating on a semiconductor surface of a photo-sensitive detector, the polycrystalline silicon layer containing from 25 to 45 atomic percent of oxygen and having a refractive index intermediate that of the semiconductor crystal and the exterior environment.

Growing community of inventors

Kanagawa, Japan

Takayoshi Mamine