Sumitomo Chemical Company, Limited

Takayoshi Maeda

Kazumasa Hiramatsu

Hideto Miyake

Yasushi Iyechika

Masahiko Hata

Noboru Fukuhara

Shinya Bohyama

Yoshinobu Ono

Hiroaki Takata

Yasunari Zempo

Tadeshi Watanabe

The present invention relates to a method for producing an epitaxial substrate having a III-V group compound semiconductor crystal represented by the general formula InGaAlN (wherein, x+y+z=1, 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;1) having reduced dislocation density, comprising a first step of covering with a mask made of a different material from the III-V group compound semiconductor so that only portions around points of the crystal constitute openings by using a III-V group compound semiconductor crystal having a plurality of projection shapes and a second step of growing the III-V group compound semiconductor crystal laterally by using the III-V group compound semiconductor crystal at the opening as a seed crystal. According to the present invention, an epitaxial substrate having a III-V group compound semiconductor crystal having low dislocation density and little warp is obtained.

Substrate of gallium nitride single crystal and process for producing the same

When a crystal layer of III-V Group nitride compound semiconductor is formed, a nitride compound semiconductor layer is first overlaid on a substrate to form a base layer and a III-V Group nitride compound semiconductor represented by the general formula InGaAlN (where 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;1, x+y+z=1) is epitaxially grown on the base layer by hydride vapor phase epitaxy at a deposition pressure of not lower than 800 Torr. By making the deposition pressure not lower than 800 Torr, the crystallinity of the III-V Group nitride compound semiconductor can be markedly improved and its defect density reduced.

Method of manufacturing III-V group compound semiconductor

Provided is a III-V compound semiconductor having a layer formed from a first III-V compound semiconductor expressed by the general formula InGaAlN (where 0&#x2266;u&#x2266;1, 0&#x2266;v&#x2266;1, 0&#x2266;w&#x2266;1, u+v+w=1), a pattern formed on the layer from a material different not only from the first III-V compound semiconductor but also from a second III-V compound semiconductor hereinafter described, and a layer formed on the first III-V compound semiconductor and the pattern from the second III-V compound semiconductor expressed by the general formula InGaAlN (where 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;x&#x2266;1, x+y+z=1), wherein the full width at half maximum of the (0004) reflection X-ray rocking curve of the second III-V compound semiconductor is 700 seconds or less regardless of the direction of X-ray incidence. In the III-V compound semiconductor, which is a high quality semiconductor, the occurrence of low angle grain boundaries is suppressed.

III-V compound semiconductor

A method for fabricating a GaN-based III-V Group compound semiconductor is provided that utilizes a regrowth method based on the HVPE method to form a second III-V Group compound semiconductor layer having a flat surface on a first III-V Group compound semiconductor layer formed with a mask layer. The method uses a mixed carrier gas of hydrogen gas and nitrogen gas to control formation of a facet group including at least the &lcub;33-62&rcub; facet by the regrowth, and conducting the regrowth until a plane parallel to the surface of the first III-V Group compound semiconductor layer is once annihilated, thereby fabricating a III-V Group compound semiconductor having low dislocation density.

Method for fabricating III-V group compound semiconductor

Provided is a method of producing a group III-V compound semiconductor having a low dislocation density without increasing the thickness of a re-grown layer, the method includes a re-growing process using a mask pattern, and threading dislocations in the re-grown layer are terminated by the voids formed on the pattern.

Group III-V compound semiconductor and method of producing the same

An epitaxially grown compound-semiconductor crystal comprising a substrate, a buffer layer formed directly or indirectly on the substrate, and an active layer formed on the buffer layer. The buffer layer comprises (A) a high-resistivity AlGaAs or AlGaInP layer doped with oxygen or/and a transition metal and, formed thereon, (B) a layer consisting of high-purity GaAs, InGaP, or AlGaAs.

Epitaxially grown compound-semiconductor crystal

A vapor-phase epitaxial growth method for producing a Groups III-V compound semiconductor containing arsenic by vapor-phase epitaxial growth using arsenic trihydride as an arsenic source is disclosed, wherein said arsenic trihydride has a volatile impurity concentration of not more than 1.5 molppb on a germanium tetrahydride conversion. The resulting epitaxial crystal has a low residual carrier concentration and is applicable to a field effect transistor.

Vapor-phase epitaxial growth method

In an apparatus for vapor-phase growth which comprises a reactor having an inlet for the introduction of the gas containing a source material on its top and a susceptor provided in the downstream portion of the reactor, the improvement wherein the susceptor is generally in a conical or polygonal pyramid form consisting of an upper rectifying portion and a lower substrate holding portion, with the diameter of the susceptor in its lower portion increasing by a greater degree than in its upper portion.

Apparatus for vapor-phase growth

Sialon, which is one of promising materials in the field of engineering ceramics, is prepared by mixing a silicon nitride precursor such as amino- or imino-silanes and an alumina precursor such as trialkoxy- or triacyloxy-aluminums or polyaluminoxanes to obtain a sialon precursor, and then heating the sialon precursor at a temperature of not lower than 1000.degree. C. either in an ammonium or inert gas atmosphere or under reduced pressures.

Growing community of inventors

Nabari, Japan

Takayoshi Maeda