Hitachi, Ltd.

Hitachi Vlsi Engineering Corp.

Other

Hitachi Tokyo Electronics Co., Ltd.

Hitachi Ulsi Engineering Corp.

Takayoshi Kogano

Hideo Aoki

Isamu Asano

Yoshinao Kawasaki

Tsuyoshi Tamaru

Masakazu Sagawa

Nobuo Owada

Osamu Tsuchiya

Toru Kaga

Fumio Ootsuka

Kazuyoshi Torii

Hiromichi Enami

Mitsuaki Horiuchi

Jun Sugiura

Osamu Kasahara

Hidetsugu Ogishi

Makoto Ogasawara

Keisuke Funatsu

Masatoshi Tsuneoka

Seiichirou Shirai

Atsushi Wakahara

Hiroyuki Akimori

Sinichi Suzuki

Yoshihiro Ikeda

Tomotsugu Shimmyo

Tunehiko Tubone

Ken Tsugane

Nobuhiro Otsuka

Masatomo Kanegae

Fumio Ito

Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel stopper regions over the principal surface portions below the element separating insulating film of the substrate by introducing an impurity into all the surface portions including the active regions and the inactive regions of the substrate after the first mask and the second mask have been removed.

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A FIRST WIRING STRIP EXPOSED THROUGH A CONNECTING HOLE, A TRANSITION-METAL FILM IN THE CONNECTING HOLE AND AN ALUMINUM WIRING STRIP THEREOVER, AND A TRANSITION-METAL NITRIDE FILM BETWEEN THE ALUMINUM WIRING STRIP AND THE TRANSITION-METAL FILM

Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions. The disclosed process includes forming insulating films over wiring lines including uppermost wiring lines, the uppermost wiring lines having gaps between adjacent uppermost wiring lines. The insulating films include forming a silicon oxide film over the wiring lines and in the gaps between adjacent uppermost wiring lines, and forming a silicon nitride film over the silicon oxide film, the silicon nitride film being formed by plasma chemical vapor deposition. The silicon oxide film is formed to have a thickness of at least one-half of the gap between adjacent uppermost wiring lines, with the silicon nitride film being thicker than the silicon oxide film.

Semiconductor integrated circuit device, process for fabricating the

Method of forming teos oxide and silicon nitride passivation layer on

Semiconductor integrated circuit device process for fabricating the same

A processing apparatus includes a processing chamber and an insertion jig for inserting an object to be processed into the processing chamber. The processing chamber and the insertion jig are adapted to be individually movable relative to a heating section, so that the operation of loading and unloading the object into and from the processing chamber effected by the insertion jig is conducted outside the heating section, thereby preventing the outside air from being induced to enter the heated processing chamber, together with the object of the processing, and thus avoiding the occurrence of various problems, for example, the object of processing being disorderly oxidized by the oxygen contained in the outside air, and the foreign matter contained in the outside air being undesirably attached to the surface of the object, so as to obtain excellent processing results. Further, the insertion jig, which is adapted to insert an object to be processed into the processing chamber through an opening provided therein, is provided with an auxiliary tube which is movable relative to the insertion jig in the direction of movement of the jig and which is detachably connected to the opening of the processing chamber, thereby preventing the outside air from being induced to enter the heated processing chamber, together with the object of processing, and thus avoiding various problems, e.g., the object of processing being undesirably oxidized by the oxygen contained in the outside air, and the foreign matter contained in the outside air being attached to the surface of the object of processing. In consequence, it is possible to obtain excellent processing results.

Processing apparatus

A processing apparatus includes a processing chamber and an insertion jig for inserting an object to be processed into the processing chamber. The processing chamber and the insertion jig are adapted to be individually movable relative to a heating section, so that the operation of loading and unloading the object into and from the processing chamber effected by the insertion jig is conducted outside the heating section, thereby preventing the outside air from being induced to enter the heated processing chamber, together with the object of the processing, and thus avoiding the occurrence of various problems, for example, the object of processing being disorderly oxidized by the oxygen contained in the outside air, and the foreign matter contained in the outside air being undesirably attached to the surface of the object, so as to obtain excellent processing results. Further, the insertion jig, which is adapted to insert an object to be processed into the processing chamber through an opening provided therein, is provided with an auxiliary tube which is movable relative to the insertion jig in the direction of movement of the jig and which is detachably connected to the opening of the processing chamber, thereby preventing the pg,2 outside air from being induced to enter the heated processing chamber, together with the object of processing, and thus avoiding various problems, e.g., the object of processing being undesirably oxidized by the oxygen contained in the outside air, and the foreign matter contained in the outside air being attached to the surface of the object of processing. In consequence, it is possible to obtain excellent processing results.

Growing community of inventors

Iruma, Japan

Takayoshi Kogano