Tokyo Electron Limited

Takaya Shimizu

Seishi Murakami

Tatsuo Hatano

Satoshi Wakabayashi

Hiroaki Ashizawa

Hideo Nakamura

Yoshikazu Ideno

Yosuke Serizawa

Keishi Akiba

A film forming method includes: repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas; and supplying a hydrazine-based compound gas as a part or all of the nitriding gas.

Semiconductor film forming method using hydrazine-based compound gas

A method of forming a Ti film on a substrate disposed in a chamber by introducing a processing gas containing a TiClgas as a Ti source and a Hgas as a reducing gas and by generating plasma in the chamber, includes introducing an Ar gas as a plasma generation gas into the chamber, converting the Ar gas into plasma to generate Ar ions, and acting the Ar ions on the Ti film to promote desorption of Cl from the Ti film.

Method of forming Ti film

A method of forming a contact layer on a substrate having a contact hole to make a contact between the substrate and a buried metal material, includes disposing the substrate in a chamber, introducing a Ti source gas, a reducing gas and an Si source gas into the chamber, and converting the Ti source gas, the reducing gas and the Si source gas into plasma to form a TiSifilm on the substrate. A portion of the TiSifilm in a bottom of the contact hole corresponds to the contact layer.

Method of forming contact layer

A CVD film forming method, includes the steps of placing a silicon wafer on a susceptor equipped with a heating member therein which is, situated in a chamber, evacuating the chamber, pre-annealing the silicon wafer while keeping pressure in the chamber substantially constant by supplying an anneal gas and a purge gas into the chamber and while exhausting gases from the chamber at a fixed rate, and heating the silicon wafer, there forming a metal film on the silicon wafer by CVD while keeping pressure in the chamber substantially constant by supplying a process gas into the chamber along with a purge gas with a controllable total supply rate while exhausting these gases from the chamber at a fixed rate, and heating the silicon wafer by the heating member, to follow immediately after the pre-annealing step, and then after-annealing the silicon wafer by heating the silicon wafer while maintaining pressure in the chamber substantially constant, by stopping supply of the process gas, supplying an anneal gas and a purge gas into the chamber by controlling the total rate of supplying these gases while and exhausting these gases from the chamber, to follow immediately after the film forming step. The film is one of a titanium nitride film, a titanium film and an aluminum film.

CVD film forming method including annealing and film forming performed

A method for forming a CVD film, comprising the steps of loading at least one object to be processed into a processing chamber and positioning the object on a support base in the processing chamber, after positioning the object in the processing chamber, introducing a process gas from a corresponding gas supply source via a corresponding gas introducing pipe into the processing chamber and forming a film by a chemical vapor deposition method on the object in the processing chamber, after forming the film on the object, unloading the object from the processing chamber, after unloading the object from the processing chamber, dry-cleaning an inside of the processing chamber, and after dry-cleaning the inside of the processing chamber, introducing an inert gas via a corresponding gas introducing pipe into the chamber to purge those particles deposited as a residue in the gas introducing pipe and inside of the chamber.

Growing community of inventors

Nirasaki, Japan

Takaya Shimizu