National Institute of Advanced Industrial Science and Technology

National Institute for Materials Science

Takatoshi Yamada

Shinichi Shikata

Masayuki Katagiri

Takashi Taniguchi

Kenji Watanabe

Satoshi Koizumi

Hisao Kanda

Nesladek Milos

Sumio Iijima

Masataka Hasegawa

Masatou Ishihara

Yoshinori Koga

Jaeho Kim

Christoph Nebel

Somu Kumaragurubaran

Hisao Nat Inst For Materials Science Kanda

Satoshi Nat Inst For Materials Science Koizumi

Takashi Nat Inst For Materials Sci Taniguchi

Masayuki Nat Inst For Materials Sci Katagiri

Nesladek Cea-Saclay Milos

Kenji Nat Inst For Materials Science Watanabe

A technique for forming graphene which solves problems involved in formation of graphene by a thermal CVD method and a resin carbonization method that a high temperature is used and the treatment time is long and can form graphene at a lower temperature in a shorter time is provided. The above problems are solved by performing hydrogen plasma treatment on a copper foil substrate having an organic substance applied thereon by use of a surface wave microwave plasma treatment device and forming graphene on the copper foil substrate by the hydrogen plasma treatment.

Method for producing graphene, and graphene

In a semiconductor diamond device, there is provided an ohmic electrode that is chemically and thermally stable and has an excellent low contact resistance and high heat resistance. A nickel-chromium alloy, or a nickel-chromium compound, containing Ni and Cr such as NiCror NiCrSi, which is chemically and thermally stable, is formed on a semiconductor diamond by a sputtering process and so forth, to thereby obtain the semiconductor diamond device provided with an excellent ohmic electrode. If heat treatment is applied after forming the nickel-chromium alloy or compound, it is improved in characteristics.

Ohmic electrode for use in a semiconductor diamond device

A method for producing hexagonal boron nitride single crystals including mixing boron nitride crystals with a solvent thereby obtaining a mixture, heating and melting the mixture under high-temperature and high-pressure thereby obtaining a melted mixture, and recrystallizing the melted mixture thereby producing hexagonal boron nitride single crystals, wherein the solvent is boronitride of alkaline earth metal, or boronitride of alkali metal and the boronitride of alkaline earth metal.

Method for producing hexagonal boron nitride single crystals

A solid-state far ultraviolet light emitting element is formed by a hexagonal boron nitride single crystal, excited by electron beam irradiation to emit far ultraviolet light having a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter.

Solid-state high-luminance far ultraviolet light emitting element including highly pure hexagonal boron nitride single crystal

A phosphorus-doped diamond film, which contains phosphorus at a concentration of 10cmor more, has a resistivity of 10&#x3a9;cm or less, and allows the voltage for initiation of electron emission to be 30V or less. A method for producing the phosphorus-doped diamond film by growing a diamond film on a diamond substrate by chemical vapor deposition method in an atmosphere containing methane and hydrogen gases and phosphorus with the use of tertiary butyl phosphorus as a source of addition of phosphorus. A diamond electron source having an electrode and a substrate which contains the phosphorous-doped diamond film and emitting electron beams from the phosphorous-doped diamond film when voltage is applied between the electrode and the substrate.

Phosphorus-doped diamond film allowing significantly reduced electron emission voltage, method for producing the same, and electron source using the same

The present invention provides a diamond electron source exerting stable and excellent electron emission characteristics, which can be used for a cold cathode surface structure operable with low voltage and a method for producing the diamond electron source. Specifically, the diamond electron source having a carbon-terminated structure has a structure composed of an electrode and a diamond film and emits electrons or electron beams from the diamond film when voltage is applied to the electrode. The diamond film is made of diamond having a carbon-terminated structure. The method for producing the diamond electron source is also provided herein.

Diamond electron source having carbon-terminated structure

Growing community of inventors

Tsukuba, Japan

Takatoshi Yamada