International Business Machines Corporation

Chi Mei Optoelectronics Corporation

Kyocera Corporation

Konica Minolta, Inc.

Au Optronics Corporation

Toppoly Optoelectronics Corporation

Takatoshi Tsujimura

Mitsuo Morooka

Takashi Miyamoto

Osamu Tokuhiro

Kazuhiro Yoshida

Takeshi Hakii

Shinya Ono

Toshiyuki Kinoshita

Hiroshi Ishidai

Koichi Miwa

Kohichi Miwa

Evan G Colgan

Kai R Schleupen

Hiroyuki Kamiya

Minako Ono

Hiroshi Suzuki

Atsushi Tanaka

Paul Stephen Andry

Robert L Wisnieff

Yoshinao Kobayashi

Peter M Fryer

Masatomo Takeichi

Kohji Murayama

Bruno Michel

Frank Robert Libsch

Toshiaki Arai

Kuniaki Sueoka

Hiroaki Kitahara

Koji Murayama

John Christopher Flake

Taroh Hasumi

Taro Hasumi

Tomoya Tokuda

Mototsugu Oohata

Sayuri Kohara

Atsuya Makita

A transparent electrode comprising a nitrogen-containing layer, and an electrode layer provided adjacent to the nitrogen-containing layer and having silver as a main component. The nitrogen-containing layer is configured using a compound containing nitrogen atoms, wherein the effective unshared electron pair content [n/M] is 2.0&#xd7;10&#x2264;[n/M], n being the number of unshared electron pairs that are not involved in aromaticity and that are not coordinated with the metal from among the unshared electron pairs of the nitrogen atoms, and M being the molecular weight.

Transparent electrode, electronic device, and organic electroluminescent element

Provided is a transparent electrode having sufficient electrical conductivity and light transmissibility, as well as an electronic device and an organic electroluminescence element whose performance is improved by using such a transparent electrode. A transparent electrode () has an electrode layer () composed of silver, wherein the film-thickness of the electrode layer () is 12 nm or less at which sheet resistance is measurable, and wherein the circumferential length of apertures (a) obtained by processing a scanning electron microscope image of a surface region (S) with an area of 500 nm&#xd7;500 nm of the electrode layer () is, in sum total, 3000 nm or less.

Transparent electrode and electronic device

Provided is a transparent electrode having both sufficient conductivity and light transmittance, and also provided is an electronic device which improves performance by using said transparent electrode. Further provided is method of manufacturing said transparent electrode. This transparent electrode is provided with a nitrogen-containing layer and an electrode layer. The nitrogen-containing layer is formed at a deposition speed of 0.3 nm/s or greater, and is configured using a compound containing nitrogen atoms. Further, the electrode layer is provided adjacent to the nitrogen-containing layer, has a 12 nm or lower film thickness and a measurable sheet resistance, and is configured using silver or an alloy having silver as the main component.

Transparent electrode, electronic device, and transparent electrode manufacturing method

The electronic device manufacturing apparatus is provided with: a substrate holding member; a first supply source which is provided so as to move relative to the primary surface side of the substrate, and which forms a nitrogen-containing layer by supplying a nitrogen-containing compound towards the primary surface of the substrate; and a second supply source which is disposed downstream of the first supply source in the direction of movement relative to the substrate, which forms a transparent electrode layer by supplying towards the primary surface of the substrate an electrode material having silver as the main component thereof, and which is disposed such that, between starting formation and two minutes after finishing formation of the nitrogen-containing layer at a prescribed position on the substrate, formation of the transparent electrode layer is started at said prescribed position on the substrate.

Electronic device manufacturing apparatus

A transparent electrode is provided with a nitrogen-containing layer, an electrode layer having silver as the main component thereof, and an aluminum intermediate layer, wherein the aluminum intermediate layer is in contact with the nitrogen-containing layer and the electrode layer and sandwiched between the nitrogen-containing layer and the electrode layer. The nitrogen-containing layer is formed by using a compound containing a nitrogen atom. The effective unshared electron pair content [n/M] of this compound satisfies '3.9&#xd7;10&#x2266;[n/M]', where n is the number of unshared electron pair(s) not involved in aromaticity and not coordinated to metal, among unshared electron pair(s) owned by the nitrogen atom, and M is molecular weight.

Transparent electrode, method for manufacturing transparent electrode, electronic device, and organic electroluminescence element

A display unit has an organic light emitting diode (OLED)provided in correspondence with each of pixels and capable of emitting light by itself, a drive transistorfor driving the OLED, a twig transistorwhich is formed so as to have a portion of an electrode of the drive transistorindependently formed, and which is used to detect a threshold voltage (Vth) of the drive transistor, a compensating capacitorin which the threshold voltage (Vth) detected by the twig transistoris written, a signal capacitorin which a signal voltage to be supplied to the drive transistoris written, a first transistorprovided between a data line and the signal capacitor, a second transistorprovided between the signal capacitorand the compensating capacitor, and a third transistorprovided between a gate electrode and another electrode of the twig transistor

Display unit, drive circuit, amorphous silicon thin-film transistor, and method of driving OLED

A liquid crystal display capable of improving the brightness without depending on the aperture ratio. By setting a lower polarization plate between an array substrate and a color filter substrate, the light reflected from a metal film formed on the array substrate can directly return to a light guide plate. Therefore, the light recycling efficiency is improved and the brightness of the liquid crystal display is improved.

Liquid crystal display panel and device thereof

An image display according to one aspect of the present invention includes a light emitting unit that is located in each unit pixel area in each, emits light corresponding to an injected electric current, and includes a plurality of light emitting layers which are horizontally divided into. The plurality of light emitting layers are electrically connected in series.

Image display

A method and an apparatus are provided for manufacturing an active matrix device including a top gate type TFT. A manufacturing process of the top gate type TFT includes the steps of forming an oxide film on the inner wall of a CVD processing chamber and arranging a substrate having source and drain electrodes formed thereon in the processing chamber. Additional steps include doping the source and drain electrodes with P, and forming an a-Si layer and a gate insulating film in the processing chamber. Furthermore, an apparatus is provided for manufacturing an active matrix device including a top gate type TFT having the inner surface of the processing chamber coated with the oxide film.

Method and apparatus for manufacturing active matrix device including top gate type TFT

A thin film transistor according to the present invention includes a gate electrode, a semiconductor layer having a channel forming region arranged on the gate electrode and an impurity region arranged on a part of the channel forming region, source and drain electrodes electrically connected to the impurity region, and a gate insulating film that electrically insulates the gate electrode and the semiconductor layer, wherein the distance between the upper end of the gate electrode and the upper end of the impurity region is larger than the distance between the upper end of the gate electrode and the upper end of the channel forming region.

Thin film transistor in which fluctuations in current flowing therethrough are suppressed, and image display apparatus

An EL display () of the invention includes a substrate (), a wall () arranged on the substrate () to form a plurality of openings corresponding to pixel areas, a plurality of pixel patterns () formed in the openings and a first lubrication layer () formed on the wall ().

EL display and production method thereof

A method and apparatus of forming a microcrystalline thin film comprises supplying a first gas and a second gas into a chamber containing a substrate during a first process, and supplying the second gas but not the first gas into the chamber during a second process. The first and second processes are performed plural times to form the microcrystalline thin film.

Forming a thin film structure

Growing community of inventors

Fujisawa, Japan

Takatoshi Tsujimura