Sumitomo Electric Industries, Limited

Intel Corporation

Sumitomo Electric Sintered Alloy, Ltd.

Itami Works of Sumitomo Electric Industries, Ltd.

Takatoshi Takikawa

Yoshishige Takano

Shosaku Yamanaka

Yoshiyuki Hirose

Yugaku Abe

Akira Fukui

Shinichi Yamagata

Makoto Imamura

Takao Nishioka

Keizo Harada

Takao Maeda

Shunsuke Ban

Kenji Matsunuma

Hitoshi Oyama

Debendra Mallik

Nozomu Kawabe

Bidyut K Bhattacharyya

Hisao Hattori

Toshihiko Kaji

Kouichi Sogabe

Terukazu Tokuoka

Syunsuke Ban

To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m&#xd7;K or higher and a thermal expansion coefficient of 20&#xd7;10/&#xb0; C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al&#x2014;SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al&#x2014;SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600&#xb0; C. in a non-oxidizing atmosphere.

Susbstrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same

A heat-resistant, creep-resistant aluminum alloy according to the present invention contains at least 10 mass % and not more than 30 mass % of silicon, at least 3 mass % and not more than 10 mass % of at least either iron or nickel in total, at least 1 mass % and not more than 6 mass % of at least one rare earth element in total and at least 1 mass % and not more than 3 mass % of zirconium with the rest substantially consisting of aluminum, while the mean crystal grain size of silicon is not more than 2 &#x3bc;m, the mean grain size of compounds other than silicon is not more than 1 &#x3bc;m, and the mean crystal grain size of an aluminum matrix is at least 0.2 &#x3bc;m and not more than 2 &#x3bc;m. Thus, an aluminum alloy excellent in heat resistance and creep resistance is obtained.

Heat-resistant, creep-resistant aluminum alloy and billet thereof as well as methods of preparing the same

To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m&times;K or higher and a thermal expansion coefficient of 20&times;10 /&deg; C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al&mdash;SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al&mdash;SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600&deg; C. in a non-oxidizing atmosphere.

Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same

An electromagnetic actuator for an automotive internal combustion engine is provided which has a stator, the weight of which is reduced. The electromagnetic actuator has a pair of electromagnets each made up of a stator and a coil, an armature disposed between the pair of electromagnets so as to be reciprocable therebetween, and a first stem provided on one side of the armature for transmitting the movement of the armature to external. The stator is formed by powder molding.

Electromagnetic actuator

It is proposed to lessen the weight and improve the mechanical strength of a retainer of a valve open-close mechanism driven by an electromagnetic actuator used in an automotive internal combustion engine. The electromagnetic actuator is mounted in a housing mounted on an internal combustion engine body. A first stem has its tip abutting the valve, which is provided with a retainer and carries a first coil spring. A second stem is provided on the other side of an armature. The second stem has a retainer. Between this retainer and the housing, a second coil spring is mounted. At least one of these parts is made of a metal smaller in specific weight than iron or its alloy. Each retainer has a boss and an arcuate corner portion having a radius of curvature R of 1.0 mm or over between a spring abutting surface and the boss to relieve stress concentration.

Valve-open-close mechanism

In a combination of the shim and cam for use in a reciprocating mechanism portion, the shim is made of a material having a hardness higher than that of the sliding surface of the cam and the sliding surface of the shim is finished to within a range of the surface roughness of R 0.07-0.2 &mgr;m in 10-point mean surface roughness and further the sliding surface of the cam is provided with open pores In the above combination, the generated torque and the wear of sliding portion are minimized by selecting a shim member whose surface roughness is difficult to deteriorate due to plastic deformation by a injection pump contact with a mating member and corrosion by various impurities mixed in lubricant and the like, and providing the surface of a cam member with an oil film holding function so as to maintain fluid lubrication of the sliding surface.

Combination body of shim and cam

To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m&times;K or higher and a thermal expansion coefficient of 20&times;10,/&deg; C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al&mdash;SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al&mdash;SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600&deg; C. in a non-oxidizing atmosphere.

A process for manufacturing a plastic package type semiconductor device composed of a rolled metal substrate made of copper or copper alloy and an insulating film formed on the surface of the substrate. The film may be a single-layer film made of silicon oxynitride or a composite film formed by laminating a silicon oxide layer and a silicon oxynitride layer (or a silicon nitride layer). A semiconductor element is mounted on the film or on the exposed surface of the substrate. Other passive elements are provided on the film. After connecting these elements with bonding wires, the entire device is sealed in a resin molding. This device is thus free of cracks due to difference in thermal expansion between the film and the substrate, or peeling due to moisture absorption.

Process for manufacturing a semiconductor substrate comprising laminated

Advance multilayer molded plastic package using mesic technology

A plastic package type semiconductor device is composed of a rolled metal substrate made of copper or copper alloy and an insulating film formed on the surface of the substrate. The film may be a single-layer film made of silicon oxynitride or a composite film formed by laminating a silicon oxide layer and a silicon oxynitride layer (or a silicon nitride layer). A semiconductor element is mounted on the film or on the exposed surface of the substrate. Other passive elements are provided on the film. After connecting these elements with bonding wires, the entire device is sealed in a resin molding. This device is thus free of cracks due to difference in thermal expansion between the film and the substrate, or peeling due to moisture absorption.

Plastic package type semiconductor device having a rolled metal substrate

Wiring board having laminated wiring patterns

Growing community of inventors

Itami, Japan

Takatoshi Takikawa