Sumitomo Electric Industries, Limited

Takatoshi Okamoto

Kyoko Okita

So Tanaka

Takayuki Nishiura

Yoshio Mezaki

Yusuke Horie

Toshiyuki Morimoto

There are provided an inspection method of a compound semiconductor substrate that can have the amount of impurities at the surface of the compound semiconductor substrate reduced, a compound semiconductor substrate, a surface treatment method of a compound semiconductor substrate, and a method of producing a compound semiconductor crystal. In the inspection method of the surface of the compound semiconductor substrate, the surface roughness Rms of the compound semiconductor substrate is measured using an atomic force microscope at the pitch of not more than 0.4 nm in a scope of not more than 0.2 &#x3bc;m square. The surface roughness Rms of the compound semiconductor substrate measured by the inspection method is not more than 0.2 nm.

Inspection method of compound semiconductor substrate, compound semiconductor substrate, surface treatment method of compound semiconductor substrate, and method of producing compound semiconductor crystal

Compound-semiconductor-wafer manufacturing whereby particle adherence, and obverse-surface oxidization and alteration are slight and the use of organic solvents is reduced. An adsorption pad is bonded to a polishing plate, and a wafer being adsorbed onto the adsorption pad without using wax is polished and thereafter stored within purified water without drying. Since storage is within purified water, particle adherence, and obverse-surface oxidization and alteration turn out to be slight, yielding a high-quality wafer. In the cleaning procedure following the aquatic storage, organic solvent washing is omitted. This allows the use/waste volume of noxious organic solvent to be reduced.

Method of manufacturing compound semiconductor wafer

Growing community of inventors

Toyonaka, Japan

Takatoshi Okamoto