Disco Corporation

Mitsubishi Electric Corporation

Takatoshi Masuda

Keiichi Kajiyama

Koji Kawamura

Naohiro Motoishi

Akira Hashimoto

Shinya Watanabe

Setsuo Yamamoto

Hiroyuki Akita

Kazunori Tanaka

Masashi Nakamura

Tatsuro Hino

Sachiko Kawasaki

Seiji Harada

Yutaka Hirota

Takehiko Senoo

Yu Yoshino

Sakae Matsuzaki

Hirotoshi Hoshikawa

Yoshikazu Kobayashi

Tadato Nagasawa

Toshihiro Aida

Ryuji Norimoto

Tomoya Biro

Nozomi Maemoto

Shigehiko Aoki

Provided is a segment-core coupled body, including a plurality of segment cores each including a core back and a tooth; and a plurality of coupling portions configured to couple the core backs to one another, wherein the plurality of segment cores and the plurality of coupling portions are each a laminated body of magnetic sheets, wherein the plurality of coupling portions each include: a posture holding portion adjacent to a gap defined between adjacent core backs; a first thin portion configured to couple one corner portion of the adjacent core backs and the posture holding portion; and a second thin portion configured to couple another corner portion of the adjacent core backs and the posture holding portion, and wherein, the posture holding portion projects toward a radially outer side with respect to the adjacent core backs.

Segment-core coupled body and method of manufacturing armature

A stator core of a rotary electric machine includes: an outer core that is an annular back yoke portion; and an inner core in which a plurality of teeth are radially arranged and inner side end portions of the teeth adjacent to each other in a circumferential direction are connected to each other in the circumferential direction by connection portions and which is fitted to an inner side of the outer core, each connection portion has a hole penetrating in an axial direction, each connection portion is split into a plurality of sections by the hole, a width in a radial direction of the one connection portion at a portion of the connection portion that has a smallest width in the radial direction is equal to or greater than &#xbc; and less than &#xbd; of a sheet thickness of each of sheets.

Stator for rotating electric machine, and rotating electric machine

A first terminal portion of a first terminal wire of one divisional coil, and a second terminal portion of a second terminal wire of another divisional coil, extend from the entrance side or the bottom side of a slot so as to be directed upward in the axial direction and arranged side by side in the radial direction of a stator on the upper side in the axial direction of a stator core. The end of the first terminal portion and the end of the second terminal portion are joined to each other by a joining part. At least one of the first terminal portion and the second terminal portion leading to the joining part has an engagement portion for positioning the first terminal portion and the second terminal portion with each other in the circumferential direction and the radial direction.

Stator for rotary electric machine, rotary electric machine, and method for manufacturing stator for rotary electric machine

A stator coil is formed by: combining a first division coil which is a coil with two or more turns and disposed in slots and in which a first terminal end portion and a second terminal end portion are formed, a second division coil which is a coil with a number of winding turns decreased from that of the first division coil by 0.5 turns and disposed in the slots and in which a first terminal end portion is formed, and a joint coil which is a coil with one turn and disposed in the slots and in which a first terminal end portion and a second terminal end portion are formed so as to be extended to the outside; and selectively joining the terminal end portions of these coils.

Stator for rotary electric machine

A dividing method for a wafer includes a step of irradiating a laser beam along streets to form modified regions in an inside of a wafer, a step of dividing the wafer into individual chips beginning with starting points given by the modified regions, a step of placing a processing chamber in which the wafer is charged to a vacuum state and fill the processing chamber with inert gas, and a step of introducing etching gas into the processing chamber filled with the inert gas to etch side faces of the chips.

Dividing method for wafer

In a vehicle AC generator, a stator core () is formed by laminating thin steel sheets, the stator core () being provided with a plurality of slot portions () which accommodate a stator winding () and tooth portions () which define adjacent ones of the slot portions; the stator winding () is disposed in the slot portions to constitute a stator (); the stator core () is filled with varnish () between laminates of each tooth () at least in an inner diameter end surface region which faces the rotor () and is coated with epoxy resin varnish () on the tooth surface of the inner diameter end surface region to form an anti-rust film.

Stator of vehicle AC generator and method for manufacturing the same

A wafer is divided into individual devices along division lines formed on the front side of the wafer. The devices are respectively formed in a plurality of regions partitioned by the division lines. A protective member is provided on the front of the wafer, and the back of the wafer is ground to a predetermined thickness. A laser beam is applied to the wafer from the back side of the wafer along the division lines with the focal point of the laser beam set inside the wafer at a position corresponding to each division line, thereby forming a plurality of modified layers inside the wafer along the division lines. The wafer is divided along the modified layers into the individual devices, and the back side of the wafer is ground to remove the modified layers and reduce the thickness of each device to the finished thickness.

Dividing method for wafer having die bonding film attached to the back side thereof

A grinding method for a wafer having a mark indicating the crystal orientation. The grinding method includes a first grinding step for grinding the upper surface of the wafer by rotating a chuck table holding the wafer thereon, rotating a grinding ring, positioning the grinding ring so that the grinding ring is passed through the center of the wafer, and feeding the grinding ring in a direction perpendicular to the chuck table; a wafer positioning step for positioning the upper surface of an outer circumferential portion of the wafer directly below the locus of rotation of the grinding ring; and a second grinding step for grinding the upper surface of the wafer by first stopping the rotation of the chuck table so that the mark indicating the crystal orientation of the wafer held on the chuck table is pointed in a predetermined direction, next feeding the grinding ring in the direction perpendicular to the chuck table, and next relatively moving the chuck table and the grinding ring in parallel.

Grinding method for wafer having crystal orientation

A method of grinding a wafer, including: a wafer holding step for holding a wafer on a conical holding surface of a chuck table having the holding surface; a rough grinding step for performing rough grinding of the wafer held on the holding surface of the chuck table by positioning a grinding surface of a rough grinding wheel at a predetermined inclination angle relative to the holding surface of said chuck table, and rotating the rough grinding wheel; and a finish grinding step for performing finish grinding of the wafer by positioning a grinding surface of a finish grinding wheel in parallel to the holding surface of the chuck table, and rotating the finish grinding wheel in a grinding region of the grinding wheel in a direction toward the vertex of the contact angle between the grinding surface of the finish grinding wheel and the surface to be ground of the wafer.

Method of grinding wafer

A processing method for a wafer includes: preparing a wafer which has a device region having plural devices formed on a surface of the wafer; and a peripheral reinforcing portion which is integrally formed around the device region and has a projection projecting outwardly on a rear surface of the wafer. The processing method further includes: removing at least the projection of the peripheral reinforcing portion of the wafer; and transferring the wafer after the removing. In the removing, while the wafer is held on a holding table such that the rear surface of the wafer is exposed and the surface of the wafer closely contacts the holding table, at least the projection of the peripheral reinforcing portion is removed. After the removing of at least the projection, while the wafer is held on the holding table, a holding tape is applied to the rear surface of the wafer and the holding tape is supported by a frame. In the transferring, the wafer having the holding tape applied thereon is separated together with the frame from the holding table and is transferred together with the frame.

Processing method for wafer and processing apparatus therefor

A processing method for a wafer includes: preparing a wafer which has a device region having plural devices formed on a surface of the wafer; and a peripheral reinforcing portion which is integrally formed around the device region and has a projection projecting outwardly on a rear surface of the wafer. The processing method further includes: holding the wafer on a holding surface of a rotatable holding table such that the rear surface of the wafer is exposed and the surface of the wafer closely contacts the holding table. The processing method further includes: thinning the peripheral reinforcing portion by cutting and removing at least the projection of the peripheral reinforcing portion of the wafer by using a cutting tool having a rotational shaft parallel to the holding surface, while rotating the wafer by rotating the holding table after the holding of the wafer. The peripheral reinforcing portion is thinned so as to have a thickness equal to or thinner than that of the device region by the thinning.

Processing method for wafer

A grinding method for a wafer having a plurality of devices on the front side, wherein the back side of the wafer is ground by a grinding wheel to suppress the motion of heavy metal in the wafer by a gettering effect and also to maintain the die strength of each device at about 1,000 MPa or more. The grinding wheel is composed of a frame and an abrasive member fixed to the free end of the frame. The abrasive member is produced by fixing diamond abrasive grains having a grain size of less than or equal to 1 &#x3bc;m with a vitrified bond. A protective member is attached to the front side of the wafer and the wafer is held on a chuck table in the condition where the protective member is in contact with the chuck table. The grinding wheel is rotated as rotating the chuck table to thereby grind the back side of the wafer by means of the abrasive member so that the average surface roughness of the back side of the wafer becomes less than or equal to 0.003 &#x3bc;m and the thickness of a strain layer remaining on the back side of the wafer becomes 0.05 &#x3bc;m.

Grinding method for wafer

A separation groove having a depth corresponding to a finished thickness of a semiconductor chip is formed in a boundary between a device region and an outer peripheral surplus region of a wafer, a protection tape whose adhesion is deteriorated by irradiation of ultraviolet rays is adhered on a surface, a portion of a back surface corresponding to the device region is ground, a thick reinforcing portion is formed on a portion corresponding to the outer peripheral surplus region. Next, only a portion of the protection tape adhered on the reinforcing portion is irradiated with ultraviolet rays, the reinforcing portionis separated from the protection tape and is separated from the device region. A dicing frame is mounted on the back surface of the wafer having only the device region through a dicing tape, and the wafer is divided into semiconductor chips.

Processing method of wafer

A method for producing a semiconductor package including a main semiconductor chip having a semiconductor circuit formed on one surface thereof, at least one subsidiary semiconductor chip stacked on the other surface of the main semiconductor chip, and an encapsulation resin covering the subsidiary semiconductor chip. This method comprises a semiconductor wafer preparation step of preparing a semiconductor wafer, on whose one surface many rectangular regions are defined by streets, and in each of the rectangular regions of which a semiconductor circuit constituting the main semiconductor chip is disposed; a circular concavity formation step of forming a circular concavity in the other surface of the semiconductor wafer; a semiconductor chip stacking step of stacking at least one such subsidiary semiconductor chip on each of many rectangular regions on the bottom surface of the circular concavity; an encapsulation resin formation step of filling a molten resin into the circular concavity, and curing the resin, thereby forming an encapsulation resin covering the subsidiary semiconductor chips; and a separation step of cutting the encapsulation resin, together with the semiconductor wafer, along the streets, to separate the semiconductor wafer and the encapsulation resin into many of the semiconductor packages.

Method for producing semiconductor package

The present invention grinds the rear surface side of a device area to form a recessed portion and an annular reinforcement part on the outer periphery of the recessed portion, removes the annular reinforcement part by grinding or cutting the rear surface of the annular reinforcement part so as to give the wafer a uniform thickness, locates the position of streets in the front surface of the wafer by infrared imaging from the rear surface side of the wafer, and after dividing the wafer into individual devices affixes dicing tape to the rear surface of the wafer divided into devices, supports the rear surface of the wafer on a dicing frame and peels a protective member off the front surface of the wafer, thereby enabling the wafer to be supported using ordinary dicing tape while posing no obstacle to device pick-up after division of the wafer.

Growing community of inventors

Tokyo, Japan

Takatoshi Masuda