Hitachi-Kokusai Electric Inc.

Kokusai Electric Corporation

Takatomo Yamaguchi

Shuhei Saido

Tetsuya Kosugi

Hidenari Yoshida

Takafumi Sasaki

Hitoshi Murata

Tomoshi Taniyama

Takayuki Nakada

Daisuke Hara

Takashi Yahata

Shinobu Sugiura

Yuichi Wada

Hideto Tateno

Hiroaki Hiramatsu

Takashi Nogami

Koei Kuribayashi

Kazuhiro Morimitsu

Kenji Shirako

Daiki Kimoto

Shinya Morita

Naonori Akae

Tsukasa Kamakura

Kenji Kameda

Takeo Hanashima

Kosuke Takagi

Masato Terasaki

Akihiro Sato

Keishin Yamazaki

Akinori Tanaka

Shinya Ebata

Masahiro Miyake

Yasuaki Komae

Tatsuhisa Matsunaga

Masanao Fukuda

Sadao Hisakado

Kenji Ono

Hiroto Yamagishi

Takeshi Itoh

Furnace for substrate processing apparatus

There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and an additive gas that reacts with the cleaning gas, respectively, from any two supply parts among at least three supply parts into the process container after processing a substrate; and (b) separately supplying the cleaning gas and the additive gas, respectively, from any two supply parts among the at least three supply parts into the process container, wherein at least one selected from the group of the cleaning gas and the additive gas is supplied from different supply parts in (a) and (b).

Method of cleaning member in process container, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a substrate retainer in a reaction chamber, wherein the substrate retainer is provided with a plurality of slots capable of accommodating a plurality of substrates in a multistage manner; (b) repeatedly performing a set including: (b-1) moving the substrate retainer so as to locate one or more of the slots outside the reaction chamber; and (b-2) charging one or more of the substrates into the one or more of the slots; and (c) moving the substrate retainer such that the plurality of substrates charged in the plurality of slots are accommodated in the reaction chamber.

Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

Provided is a technique in which a heating-up time inside a process chamber is reduced. The technique includes a substrate processing apparatus including a process chamber where a substrate is processed, a substrate retainer configured to support the substrate in the process chamber, a process gas supply unit configured to supply a process gas into the process chamber, a first heater installed outside the process chamber and configured to heat an inside of the process chamber, a thermal insulating unit disposed under the substrate retainer, a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber, and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit.

Substrate processing apparatus

Retainer plate of top heater for wafer processing furnace

Described herein is a technique capable of reducing the time necessary for stabilizing the inner temperature of the processing furnace. A substrate processing apparatus may include: a wafer retainer configured to support a plurality of wafers; a upright cylindrical process vessel; a seal cap configured to cover an opening at a lower end of the process vessel; a first heater configured to heat an inside of the process vessel from a lateral side thereof; an insulating unit disposed between the seal cap and the wafer retainer; and a second heater facing at least one of the plurality of wafers and configured to heat the at least one of the plurality of wafers, the second heater including: a pillar penetrating centers of the seal cap and the insulating unit; an annular member connected to and concentric with the pillar; a pair of connecting parts connecting end portions of the annular member to the pillar; and an heating element disposed inside the annular member.

Substrate processing apparatus, heater and method of manufacturing semiconductor device

Retainer of ceiling heater for semiconductor fabrication apparatus

Described herein is a technique capable of reducing the time necessary for stabilizing the inner temperature of the processing furnace. A substrate processing apparatus may include: a wafer retainer configured to support a plurality of wafers; an upright cylindrical process vessel; a seal cap configured to cover an opening at a lower end of the process vessel; a first heater configured to heat an inside of the process vessel from a lateral side thereof; an insulating unit disposed between the seal cap and the wafer retainer; and a second heater facing at least one of the plurality of wafers and configured to heat the at least one of the plurality of wafers, the second heater including: a pillar penetrating centers of the seal cap and the insulating unit; an annular member connected to and concentric with the pillar; a pair of connecting parts connecting end portions of the annular member to the pillar; and a heating element disposed inside the annular member.

Ceiling heater for substrate processing apparatus

Air flow controller for heater of substrate processing apparatus

Heater for substrate processing apparatus

Growing community of inventors

Toyama, Japan

Takatomo Yamaguchi