Hitachi, Ltd.

Takasumi Oyanagi

Norikatsu Takaura

Masaharu Kinoshita

Mitsuharu Tai

Kenichi Akita

Takahiro Morikawa

Masahito Kitamura

A superlattice phase change memory capable of increasing a resistance in a low resistance state is provided. The phase change memory includes a first electrode, a second electrode provided on the first electrode, and a phase change memory layer having a superlattice structure between the first electrode and the second electrode, the superlattice structure including to repeatedly formed layers of SbTeand GeTe. The phase change memory layer having the superlattice structure includes a SbTelayer containing Zr in contact with the first electrode.

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Tokyo, Japan

Takasumi Oyanagi