Shin-etsu Chemical Co., Ltd.

Takasi Toide

Minoru Takamizawa

Akira Hayashida

Hiromi Ohsaki

Taishi Kobayashi

Tatsuhiko Hongu

Nobuaki Urasato

Morinobu Endou

Nichiro Suzuki

The invention provides a method for the preparation of an ultrafine powder of silicon carbide having an extremely fine and uniform particle size distribution of spherical agglomerate particles each formed of crystallites of 5 nm or smaller in size. The silicon carbide powder is prepared by the vapor phase pyrolysis of a specified methyl hydrogen(poly)silane as diluted with a carrier gas, e.g. hydrogen, to give a concentration of 40% by volume or lower at a temperature of 750.degree. to 1600.degree. C. The silicon carbide powder can readily be sintered at a temperature of 1750.degree. to 2500.degree. C. even without addition of a sintering aid to give a sintered body of extremely high density reaching 80% or larger of the theoretical value which can never be obtained of the conventional silicon carbide powders.

Ultrafine powder of silicon carbide, a method for the preparation

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Fukui, Japan

Takasi Toide