Fujitsu Optical Components Limited

Takasi Simoyama

A disclosed semiconductor photodetector includes a first semiconductor layer having a first refractive index and a first band gap; a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer having a second refractive index and a second band gap; a first electrode; and a second electrode. The second refractive index is greater than the first refractive index, and the second band gap is smaller than the first band gap. The first semiconductor layer includes a p-type first region, an n-type second region, and a non-conductive third region between the first region and the second region. The second semiconductor layer includes a p-type fourth region in ohmic contact with the first electrode, an n-type fifth region in ohmic contact with the second electrode, and a non-conductive sixth region between the fourth region and the fifth region.

Semiconductor photodetector, receiver, and integrated optical device

An apparatus includes a first semiconductor layer including a first bandgap; and a second semiconductor layer of a first polarity including a second bandgap smaller than the first bandgap and formed over the first semiconductor layer. The first semiconductor layer includes a first conductive region of the first polarity, a second conductive region of a second polarity, and a non-conductive region between the first conductive region and the second conductive region, and the second semiconductor layer is in contact with the first conductive region and the non-conductive region.

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Zama, Japan

Takasi Simoyama