Hitachi, Ltd.

Renesas Technology Corp.

Other

Hitachi Ulsi Systems Co., Ltd.

Takashi Yunogami

Kazuo Nojiri

Sukeyoshi Tsunekawa

Shigeru Ohno

Nobuyoshi Kobayashi

Miwako Nakahara

Toshiyuki Arai

Hideo Aoki

Takayuki Oshima

Shinichi Fukada

Yuzuru Ohji

Shoji Hotta

Kazuto Watanabe

Yoshitaka Nakamura

Tatsumi Mizutani

Isamu Asano

Masaru Izawa

Keizo Suzuki

Shuntaro Machida

Masahiko Hiratani

Fumio Murai

Yuichi Matsui

Takafumi Tokunaga

Takao Kumihashi

Kazutami Tago

Kazuyuki Suko

Atsushi Maekawa

Shunji Sasabe

Jun Abe

Shouochi Uno

Tomonori Sekiguchi

Satoru Yamada

Tsugio Takahashi

Tatsuyuki Saito

Masahiro Tadokoro

Ken Ninomiya

Kaori Misawa

Masayoshi Hirasawa

Tomonori Saeki

Takenobu Ikeda

Kenichi Shoji

Kenetsu Yokokawa

In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.

Method of manufacture of semiconductor integrated circuit device and semiconductor integrated circuit device

Method of manufacture of semiconductor integrated circuit

Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

Process for treating solid surface and substrate surface

An insulating-film composition containing an insulating-film precursor and a pore-generating material is applied onto a surface of a semiconductor substrate, and a first heat treatment is performed to polymerize the insulating-film precursor without vaporizing the pore-generating material, to form a non-porous insulating film. Next, a resist pattern is formed on the non-porous insulating film, and dry etching is performed, using the resist pattern as a mask, to form a trench in the non-porous insulating film. After removing the resist pattern by ashing, the surface of the semiconductor substrate is cleaned. Next, a second heat treatment is performed to remove the pore-generating material from the non-porous insulating film and to form a porous insulating film. Thereafter, a copper layer is deposited in the trench on a barrier-metal film to form copper wiring.

Method for manufacturing semiconductor device

Insulating films through (of which insulating films are silicon nitride films and insulating films are silicon oxide films) are sequentially formed on the wires of the fourth wiring layer and groove pattern is transferred into the insulating film by means of photolithography. An anti-reflection film is formed to fill the grooves of the insulating film and then a resist film carrying a hole pattern is formed. The films are subjected to an etching operation in the presence of the resist film to transfer the hole pattern into the insulating films and part of the insulating film . Subsequently, the resist film and the anti-reflection film are removed and the groove pattern and the hole pattern are transferred respectively into the insulating film and the insulating film by using the insulating film as mask.

Semiconductor device and method of manufacturing the same

Conduction reliability between a capacitor upper electrode and a plug connected to an upper layer wire is kept high to prevent connection defects and to reduce the resistance of the capacitor upper electrode. In a capacitor of a DRAM comprising a lower electrode made of ruthenium, a capacitor insulating film made of BST and an upper electrode , the upper electrode has a laminate structure comprising a ruthenium film formed on the side of the capacitor insulating film and a tungsten film formed over the former.

Semiconductor integrated circuit device having spaced-apart electrodes and the method thereof

Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

With a view to providing a technique for highly-selective etching of Ru (ruthenium) using a photoresist as an etching mask, an Ru-film, which is an lower electrode material deposited on the side walls and bottom surface of a hole, is covered with a photoresist film, followed by isotropic dry etching in a gas atmosphere containing an ozone gas, whereby a portion of the Ru film outside of the hole is removed.

Manufacturing method of semiconductor integrated circuit device

Insulating films through (of which insulating films are silicon nitride films and insulating films are silicon oxide films) are sequentially formed on the wires of the fourth wiring layer and groove pattern is transferred into the insulating film by means of photolithography. An anti-reflection film is formed to fill the grooves of the insulating film and then a resist film carrying a hole pattern is formed. The films are subjected to an etching operation in the presence of the resist film to transfer the hole pattern into the insulating films and part of the insulating film Subsequently, the resist film and the anti-reflection film are removed and the groove pattern and the hole pattern are transferred respectively into the insulating film and the insulating film by using the insulating film as mask.

Method of manufacturing a semiconductor device

A hole is formed on an insulating film made of silicon oxide by selectively plasma-etching the insulating film with an etching gas containing C F , O , and Ar firstly under a condition in which the deposition property of a polymer layer is weak and secondly under a condition in which that of the polymer layer is strong.

Method of manufacturing a semiconductor integrated circuit device

In order that reaction products of low vapor pressure may be prevented from being deposited on the side wall of a predetermined pattern when this pattern is to be formed by dry-etching a Pt film or a PZT film, a resist mask having a rounded outer periphery at its head is used when the Pt film deposited on a semiconductor substrate is to be dry-etched. After this dry-etching, moreover, an overetching of a proper extent is performed to completely remove the side wall deposited film which is left on the side of the pattern. The resist mask is formed by exposing and developing a benzophenone novolak resist and subsequently by heating to set it while irradiating it, if necessary, with ultraviolet rays.

Process for manufacturing semiconductor integrated circuit device

According to the invention of the present application, for providing an etching technique for a wiring layer capable of decreasing the degradation of characteristics of a ferroelectric film in FeRAM, a wiring material (LI wiring , Al wiring ) connected with an electrode layer of a ferroelectric film (lower electrode , upper electrode ) is fabricated by dry etching using inducely coupled plasma upon forming the wiring layer and, successively, applied with an asher treatment at a temperature of 300&deg; C. or higher by using inducely coupled plasma while introducing a gas mixture, for example, of O &plus;CF &plus;H O.

Method for fabricating semiconductor integrated circuit device

Growing community of inventors

Niiza, Japan

Takashi Yunogami