Kabushiki Kaisha Toshiba

Takashi Yoda

Katsuya Okumura

Rempei Nakata

Nobuo Hayasaka

Tohru Watanabe

Naoto Miyashita

Kenro Nakamura

Hiroshi Ikegami

Yoshimi Hisatsune

Hisashi Kaneko

Hiroshi Kubota

Motosuke Miyoshi

Mie Matsuo

Masako Kodera

Hirokazu Ezawa

Makoto Sekine

Itsuko Sakai

Masaaki Hatano

Naruhiko Kaji

Soichi Yamashita

Hiroshi Ikenoue

In manufacturing a semiconductor device, a part of an element is formed on the surface of a substrate, and at least a periphery of the substrate is polished using a polishing member stretched around the periphery of the substrate so that a polishing face of the polishing member is slid on a polishing target surface of the periphery.

Method for manufacturing semiconductor device and polishing apparatus

A method of producing a semiconductor device according to an aspect of the present invention comprises forming a seed film of Cu on a substrate; polycrystallizing the seed film formed on the substrate; and forming a plated film of Cu on the polycrystallized seed film by electrolytic plating.

Method of producing semiconductor device

A gas-circulating processing apparatus which comprises a processing chamber, a gas feeding piping, a gas supply piping, a first exhaust mechanism discharging a gas from the processing chamber, a second exhaust mechanism discharging a portion of a gas discharged from the first exhaust mechanism, a back pressure adjusting mechanism interposed between the first exhaust mechanism and the second exhaust mechanism to adjust a back pressure of the first exhaust mechanism, and a gas circulating piping which is configured to combine another portion of the gas that has been discharged from the first exhaust mechanism with a processing gas supplied from the gas supply piping, wherein the gas feeding piping has a larger inner diameter than that of the gas supply, or the processing gas is introduced into the first exhaust mechanism, or a first heater is provided to heat at least part of the circulating route.

Gas circulating-processing apparatus

There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C&mdash;H bonds and C&mdash;C bonds, and a total amount of C atoms forming the C&mdash;H bonds and C atoms forming the C&mdash;C bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.

Semiconductor device and method of manufacturing the same

Disclosed is a stacked type semiconductor device comprising a predetermined semiconductor integrated circuit chip and at least one semiconductor integrated circuit chip which are stacked, the at least one semiconductor integrated circuit chip including a group of circuit blocks, and the predetermined semiconductor integrated circuit chip comprising a storage section configured to store defect information indicative of a defective circuit block if the group includes the defective circuit block and a replacement circuit section configured to replace the defective circuit block.

Stacked type semiconductor device

A semiconductor integrated circuit device has a semiconductor chip, interposer, and substrate. The semiconductor chip has a plurality of first pads arranged at first pitches on a surface. The interposer has a first surface and a second surface. On the first surface, a plurality of second pads are arranged at the first pitches. On said second surface, a plurality of third pads arranged at second pitches which are larger than the first pitches. The second pads and the first pads are connected to each other by joining the first surface of the interposer to the surface of the semiconductor chip so as to face each other. The substrate has a plurality of fourth pads arranged at the second pitches on a surface. The fourth pads and the third pads are connected to each other by joining the surface of the substrate to the second surface of the interposer so as to face each other.

Semiconductor integrated circuit device having interposer and method of manufacturing the same

In the CMP of films of semiconductor devices, pulsed measuring radiation is directed onto a surface to be polished of a rotating wafer. At this point, the pulse repetition rate of the pulsed measuring radiation is determined so that the pulse measuring radiation is directed only onto a specified portion of the surface of each semiconductor device. Thereby, reflection data can be obtained only from the specified portion of a film to be polished, allowing accurate measurements of the thickness of the specified portion of the film in the middle of polishing.

Semiconductor polishing apparatus and method for chemical/mechanical polishing of films

A semiconductor device having a reliable contact is disclosed. The device includes a barrier film deposited on the bottom and side wall of a contact hole opened in a insulating film at a predetermined position; a first metal film filled in the contact hole; and a second metal film of low resistance for forming an interconnection which passes above the contact hole filled in with the first metal film. An oxide film is formed by oxidation on the barrier metal film. And a method of manufacturing the semiconductor device is disclosed. The method includes the steps of: after opening a contact hole at a predetermined position in an insulating film deposited on a semiconductor substrate, forming a barrier film in the bottom and side wall of the contact hole; filling the contact hole with a first metal film while heating the semiconductor substrate at a predetermined temperature; and depositing a second metal film over the surface of the semiconductor device and patterning the second metal film to form an interconnection which passes the contact hole that has been filled in with the first metal film.

A method of manufacturing a semiconductor device whereby a wiring material is filled within a recess of an insulating film, with the upper surface of the wiring material being uneven, a coating film being evenly deposited on the wiring material, the wiring material and the coating film being etched with tetra-methyl-guanidine having the same etching speed with respect to the wiring material and the coating film in such a manner that the upper surface of the wiring material filled within the recess is made substantially flat and substantially flush with the upper surface of the insulating film. A tetra-methyl-guanide may be used which has a higher etching speed with respect to the wiring material than the coating film. In this case, the wiring material has an indentation above the recess, and the coating film is thick above the recess and thin above the insulating film. Therefore, the wiring material within the recess is etched in such a manner that the upper surface of the wiring material within the recess is made flat and substantially flush with the upper surface of the insulating film.

Growing community of inventors

Machida, Japan

Takashi Yoda