Kabushiki Kaisha Toshiba

Renesas Electronics Corporation

Nec Corporation

Toshiba Memory Corporation

Mitsubishi Chemical Corporation

Takashi Yamauchi

Masahiro Takashita

Junji Koga

Yoshihiko Nakano

Yoshinori Tsuchiya

Atsuhiro Kinoshita

Shosuke Fujii

Reika Ichihara

Yoshifumi Nishi

Masato Akita

Koichi Mizushima

Koichiro Inomata

Nobutoshi Aoki

Koichi Kato

Hidenori Miyagawa

Eiichi Sakaue

Kazuya Ohuchi

Kei Matsuoka

Teruyuki Kinno

Hideyuki Sugiyama

Li Zhang

Tadashi Sakai

Masumi Saitoh

Tomio Ono

Akira Takashima

Daisuke Matsushita

Seiichi Suenaga

Shinji Murai

Kei Masunishi

Yuuichi Kamimuta

Hiroto Honda

Yasuhiro Goto

Chika Tanaka

Norihiro Tomimatsu

Naoki Murakami

Yuichi Motoi

Ryuichi Yoshiyama

There is provided an output circuit for supplying an output current to a load coupled to an output terminal in response to an input signal. The output circuit includes an output transistor for supplying the output current to the output terminal, an output-drive circuit for driving the output transistor, a constant-current limiting circuit for generating a current control signal for limiting the output current to a predetermined current value, and a control circuit for implementing a control such that the output current is controlled on the basis of the current control signal if a voltage at the output terminal is at a predetermined voltage, or less after the input signal is supplied while the output transistor is driven by the output-drive circuit if the voltage at the output terminal is in excess of the predetermined voltage.

Output circuit

According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode, a semiconductor layer and a first layer. The first electrode includes at least one of Ag, Ni, Co, Al, Zn, Ti, and Cu. The semiconductor layer is sandwiched between the first and second electrodes. The first layer is provided between the second electrode and the semiconductor layer and contains an element included in the semiconductor layer and at least one of Ag, Ni, and Co.

Nonvolatile resistance change element

According to one embodiment, a nonvolatile variable resistance device includes a first electrode, a second electrode, a first layer, and a second layer. The second electrode includes a metal element. The first layer is arranged between the first electrode and the second electrode and includes a semiconductor element. The second layer is inserted between the second electrode and the first layer and includes the semiconductor element. The percentage of the semiconductor element being unterminated is higher in the second layer than in the first layer.

Nonvolatile variable resistance device having a semiconductor layer with higher percentage of unterminated semiconductor element than adjacent layers

According to one embodiment, a memory device includes a first electrode including a crystallized SiGelayer (0&#x2266;x&#x3c;1), a second electrode including a metal element, a variable resistance part between the first and second electrode, the part including an amorphous Si layer, and a control circuit controlling a filament in the amorphous Si layer, the filament including the metal element.

Variable resistance semiconductor memory device

Nonvolatile variable resistance device having metal halogen or metal sulfide layer

According to one embodiment, there are provided a first electrode, a second electrode containing a 1B group element having an Al element added thereto, and a variable resistive layer disposed between the first electrode and the second electrode and having a silicon element.

Nonvolatile variable resistance element having a variable resistive layer disposed between first and second electrodes

A semiconductor device for correcting an input signal and outputting a corrected signal are provided. The semiconductor device includes a semiconductor layer, a plurality of first conductors formed on one of faces of the semiconductor layer and serving as input terminals to which a signal is input, second conductors of the number larger than that of the first conductors at density higher than that of the first conductors, formed on the other face of the semiconductor layer, a high impurity concentration region provided on the semiconductor layer side of an interface between the second conductor and the semiconductor layer, an insulating layer formed on the other face, and a plurality of third conductors formed on the insulating layer and serving as output terminals for outputting the processed signal.

Semiconductor device

Described herein is a method of manufacturing a semiconductor device realizing higher performance by reducing contact resistance of an electrode. In the method, a gate insulating film, a gate electrode are formed on a semiconductor substrate. A first metal is deposited substrate, and a metal semiconductor compound layer is formed on the surface of the semiconductor substrate by making the first metal and the semiconductor substrate react each other by a first heat treatment. Ions having a mass equal to or larger than atomic weight of Si are implanted into the metal semiconductor compound layer. A second metal is deposited on the metal semiconductor compound layer. An interface layer is formed by making the second metal segregated at an interface between the metal semiconductor compound layer and the semiconductor substrate by diffusing the second metal through the metal semiconductor compound layer by a second heat treatment.

Method of manufacturing MISFET with low contact resistance

A direct type fuel cell power generator comprises an anode electrode including an anode catalyst layer, a cathode electrode including a cathode catalyst layer, a fuel container comprising at least two electromotive portion units, each of which comprises an electrolyte film disposed between the anode electrode and the cathode electrode, the fuel container housing a fuel therein, and a fuel flow path to supply a fuel in the electromotive portion unit. In the power generator, the fuel flow path has a flow path which produces flow-back again from the fuel container to the first electromotive portion unit via the first electromotive portion unit and the second electromotive portion unit, and which is not branched during the flow-back.

Direct type fuel cell power generator

It is made possible to reduce the interface resistance at the interface between the nickel silicide film and the silicon. A semiconductor manufacturing method includes: forming an impurity region on a silicon substrate, with impurities being introduced into the impurity region; depositing a Ni layer so as to cover the impurity region; changing the surface of the impurity region into a NiSilayer through annealing; forming a Ni layer on the NiSilayer; and silicidating the NiSilayer through annealing.

Semiconductor device and method of manufacturing the same

A metal insulator semiconductor field effect transistor (MISFET) having a strained channel region is disclosed. Also disclosed is a method of fabricating a semiconductor device having a low-resistance junction interface. This fabrication method includes the step of forming a gate electrode above a silicon substrate with a gate insulator film being sandwiched therebetween. Then, form a pair of heavily-doped p (p) type diffusion layers in or on the substrate surface at both sides of the gate electrode to a concentration of 5&#xd7;10atoms/cmor more and yet less than or equal to 1&#xd7;10atoms/cm. Next, silicidize the p-type layers by reaction with a metal in the state that each layer is applied a compressive strain.

Method of forming a silicide layer while applying a compressive or tensile strain to impurity layers

The invention provides a method for inspecting a fuel cell that can simply inspect fuel cell characteristics. The method is an inspecting method for a direct methanol fuel cell generator comprising an anode electrode including an node catalyst layer, a cathode electrode including a cathode catalyst layer, and N pieces of cells having an electrolyte disposed between the anode electrode and the cathode electrode, for power generation by feeding an aqueous methanol solution to the anode electrode and an oxidant gas to the cathode electrode. The fuel cell generator is inspected by measuring voltage changes of the voltage V of one electromotive unit caused by generating a current density change &#x394;I or &#x2212;&#x394;I (mA/cm) satisfying the condition of 0.2&#x2266;&#x394;I&#x2266;5 in a finite current density I (mA/cm) loaded on the plural electromotive units arbitrarily connected in series in the fuel cell generator under power generation during a time interval &#x394;t (sec) satisfying the condition of 10&#x2266;&#x394;t&#x2266;0.5.

Method and apparatus for inspecting direct liquid fuel cell generator, and direct liquid fuel cell generator

Growing community of inventors

Kanagawa, Japan

Takashi Yamauchi