Tokyo Electron Limited

Takashi Yamauchi

Shinichiro Kawakami

Masashi Enomoto

Kohei Kawakami

Daiki Shibata

Takahiro Kitano

Makoto Muramatsu

Tadatoshi Tomita

Takanori Nishi

Yohei Sano

Hiroshi Mizunoura

Tomonori Esaki

A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection filmis previously formed below a resist film. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the anti-reflection filmfacing a bottom of the recess patternof the resist film. Therefore, the metal componentcan be suppressed from remaining at the bottom of the recess pattern. Therefore, when the SiOfilmis subsequently etched using the pattern of the resist film, the etching is not hindered, so that defects such as bridges can be suppressed.

Substrate processing module

Method for forming mask pattern, storage medium, and apparatus for processing substrate

A liquid treatment apparatus includes: a substrate holder for holding a substrate; a discharge nozzle for discharging a treatment liquid onto the substrate; a liquid supply pipe for supplying the treatment liquid from a treatment liquid storage source to the discharge nozzle; a gas pipe that encompasses the liquid supply pipe and through which an inert gas for adjusting the temperature of the treatment liquid flows in a space between the gas pipe and the liquid supply pipe; a processing container in which the substrate holder, the discharge nozzle, the liquid supply pipe, and the gas pipe are provided; and an atmosphere gas supply part for supplying an atmosphere gas into the processing container. The gas pipe is provided so that an extension portion between an upstream end inside the processing container and an encompassing portion is folded back inside the processing container in a plan view.

Liquid treatment apparatus and method of adjusting temperature of treatment liquid

A substrate processing method includes: forming a coating film on a substrate by supplying a resist liquid which is photosensitive to extreme ultraviolet (EUV) light to a surface of the substrate; forming a semi-solidified film by volatilizing a solvent contained in the coating film without heating the solvent; irradiating the semi-solidified film with EUV light thereby exposing the semi-solidified film with EUV light; and supplying a developer to the substrate after the exposure of the semi-solidified film.

Substrate processing method, substrate processing apparatus, and computer readable recording medium

A substrate processing apparatus includes a film forming processing unit configured to form a metal-containing resist film on a substrate; a heat treatment unit configured to perform a heating processing on the substrate on which the film is formed and in which an exposure processing is performed on the film; a developing processing unit configured to perform a developing processing on the film formed on the substrate on which the heating processing is performed; and an adjustment controller configured to reduce a difference between substrates in an amount of water that reacts in the film formed on the substrate during the heating processing.

Substrate processing apparatus, substrate processing method and recording medium

A substrate treatment method includes: a polymer separation step of phase-separating a block copolymer into a hydrophilic polymer and a hydrophobic polymer; and a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer, wherein in the polymer removal step, the hydrophilic polymer is removed by: irradiating the phase-separated block copolymer with an energy ray; then supplying a first polar organic solvent having a first degree of dissolving the hydrophilic polymer, being lower in boiling point than water and capable of dissolving water, and not dissolving the hydrophobic polymer, to the block copolymer; and then supplying a second polar organic solvent having a second dissolving degree lower than the first dissolving degree, being higher in boiling point than water, and not dissolving the hydrophobic polymer, to the block copolymer.

Substrate treatment method, computer storage medium and substrate treatment system

There is provided a method of processing a substrate using a block copolymer composed of a first polymer containing an oxygen atom and a second polymer containing no oxygen atom, the method including: coating the block copolymer onto the substrate on which a predetermined pattern is formed; phase-separating the block copolymer into the first polymer and the second polymer; and heating the substrate in a low oxygen atmosphere to selectively remove the first polymer from the phase-separated block copolymer.

Growing community of inventors

Koshi, Japan

Takashi Yamauchi