Murata Manufacturing Co., Ltd.

Murata Manufactruing Co., Ltd.

Takashi Yamane

Tetsuya Kimura

Sho Nagatomo

Hideki Iwamoto

Tsutomu Takai

Katsuya Daimon

Masanori Otagawa

Takeshi Nakao

Yasumasa Taniguchi

Ryo Nakagawa

Seiji Kai

Hisashi Yamazaki

Koji Yamamoto

Takuya Koyanagi

Yuji Miwa

Yuichi Takamine

Syunsuke Kido

Masashi Omura

Masaru Yata

Katsuhiro Ikada

Korekiyo Ito

Keiji Okada

Noriyoshi Ota

Yasuhiko Hirano

Toru Takeshita

Yasunobu Hayashi

Atsushi Tanaka

Yuta Ishii

Ippei Hatsuda

An acoustic wave device includes a piezoelectric layer and first and second electrodes facing each other in a direction intersecting a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave in a thickness-shear primary mode. A material of the piezoelectric layer is lithium niobate or lithium tantalate. At least a portion of each of the first and second electrodes is embedded in the piezoelectric layer.

Acoustic wave device

An acoustic wave device includes a piezoelectric layer and first and second electrodes facing each other in a direction crossing a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave of a thickness slip first-order mode. The acoustic wave device includes first and second resonators. Each of the first and second resonators includes the first and second electrodes, and a setting portion including a setup region where the first and second electrodes are provided in the piezoelectric layer. The thickness of each of the first and second resonators excludes the thickness of the first and second electrodes included in the resonator. The thickness of the first resonator is different from the thickness of the second resonator.

An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, functional electrodes on the piezoelectric layer, and first and second electrode films positioned on the piezoelectric layer to face each other and having different potentials from each other. A thickness of the piezoelectric layer in at least a portion of a first region overlapping the first electrode film in plan view is different from a thickness of the piezoelectric layer in at least a portion of a second region not overlapping the first electrode film in plan view.

An acoustic wave device further includes a piezoelectric layer and first and second electrodes, first and second divided resonators, and a support substrate. The support substrate includes first and second energy confinement layers. The first energy confinement layer overlaps at least a portion of a first region of the piezoelectric layer. The second energy confinement layer overlaps at least a portion of a second region of the piezoelectric layer. The support substrate includes a wall portion between the first and second energy confinement layers.

An acoustic wave device includes a piezoelectric layer and first and second electrodes. The first and second electrodes face each other in a direction crossing a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave of a thickness-shear primary mode. The material of the piezoelectric layer is lithium niobate or lithium tantalate. The first and second electrodes include aluminum layers, respectively, on the piezoelectric layer. An orientation direction of a crystal of each of the aluminum layers is a direction orthogonal or substantially orthogonal to a second principal surface on the piezoelectric layer side of each of the aluminum layers.

An acoustic wave device includes a piezoelectric layer, a first electrode, a second electrode, a first divided resonator, a second divided resonator, and a support substrate. The support substrate includes first and second energy confinement layers. The first energy confinement layer at least partially overlaps with a first region of the piezoelectric layer. The second energy confinement layer at least partially overlaps with a second region of the piezoelectric layer. The first and second energy confinement layers are integrally provided in the support substrate.

An acoustic wave device includes a piezoelectric body including first and second main surfaces facing each other, an IDT electrode provided on the first main surface of the piezoelectric body and including electrode fingers, a high acoustic velocity member on the second main surface side of the piezoelectric body, in which an acoustic velocity of a propagating bulk wave is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric body, and a first dielectric film provided on an upper surface of the electrode fingers, in which a portion where a dielectric is not present is provided between the electrode fingers of the IDT electrode.

An acoustic wave device includes a piezoelectric layer and first and second electrodes. The first and second electrodes face each other in a direction intersecting with a thickness direction of the piezoelectric layer. The acoustic wave device uses a bulk wave of a thickness-shear primary mode. A material of the piezoelectric layer is lithium niobate or lithium tantalate. The piezoelectric layer is on a first main surface of the silicon substrate. The acoustic wave device further includes a trap region on a side of a second main surface of the piezoelectric layer.

An acoustic wave device includes a material layer which has Euler angles and an elastic constant at the Euler angles, a piezoelectric body which includes first and second principal surfaces opposing each other, is laminated directly or indirectly on the material layer so that the second principal surface is on the material layer side and has Euler angles, and whose elastic constant at the Euler angles, and an IDT electrode which is disposed on at least one of the first principal surface and the second principal surface of the piezoelectric body. At least one elastic constant among elastic constants Cto Cof the material layer not equal to 0 and at least one elastic constant among elastic constants Cto Cof the piezoelectric body not equal to 0 have opposite signs to each other.

Acoustic wave device, high frequency front end circuit, and communication apparatus

An acoustic wave device includes a material layer with Euler angles and an elastic constant at the Euler angles represented by Expression 1, a piezoelectric body including opposing first and second principal surfaces, is laminated directly or indirectly on the material layer and has Euler angles, and whose elastic constant at the Euler angles is represented by the Expression 1 below, and an IDT electrode on at least one of first and second principal surfaces of the piezoelectric body, and in which a wave length determined by an electrode finger pitch is &#x3bb;. A product of Cand Chas a positive value, and an absolute value of Cof the material layer is greater than an absolute value of Cof the piezoelectric body 

An elastic wave device includes a spacer layer on or above a support substrate and outside a piezoelectric film as seen in a plan view from a thickness direction of the support substrate. A cover layer is disposed on the spacer layer. A through electrode extends through the spacer layer and the cover layer and is electrically connected to the wiring electrode. The wiring electrode includes a first section overlapping the through electrode as seen in the plan view from the thickness direction, a second section overlapping the piezoelectric film as seen in the plan view from the thickness direction, and a step portion defining a step in the thickness direction between the first section and the second section. The spacer layer includes an end portion embedded in the cover layer.

Elastic wave device

An acoustic wave device includes IDT electrodes with different wavelengths determined by electrode finger pitches. A piezoelectric thin film is laminated directly on or indirectly above a high acoustic velocity member. A silicon oxide film is laminated on the piezoelectric thin film, IDT electrodes are laminated on the silicon oxide film. When &#x3bb; represents a wavelength of one of the IDT electrodes having the shortest wavelength, y represents a wavelength normalized film thickness (%) that is a percentage of a film thickness of the piezoelectric thin film with respect to the wavelength &#x3bb;, and x represents a wavelength normalized film thickness (%) that is a percentage of a film thickness of the silicon oxide film with respect to the wavelength &#x3bb;, y is equal to or smaller than about 350% and y&#x3c;1.6x+0.05x&#x2212;1 is satisfied.

Acoustic wave device, high-frequency front-end circuit, and communication device

An elastic wave device includes a multilayer film including a piezoelectric thin film laminated on a support substrate. In a region outside a region in which an IDT electrode is provided, the multilayer film is not disposed. A first insulating layer extends from at least a portion of the region to a region on the piezoelectric thin film. A wiring electrode extends to a region on the first insulating layer from a region on the piezoelectric thin film and to extend to a region on a portion of the first insulating layer located in the region. A support layer including a cavity defining a hollow space is provided on the support substrate. The support layer includes, on the wiring electrode, a portion extending from the region to a region above an inner end of the first insulating layer.

An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.

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Nagaokakyo, Japan

Takashi Yamane