Nippon Micrometal Corporation

Nippon Steel Chemical & Material Co., Ltd.

Pioneer Electronic Corporation

Nippon Steel & Sumikin Materials Co., Ltd.

Pioneer Corporation

Nippon Steel Materials Co., Ltd.

Waseda University

Pioneer Electronic Coporation

Nippon Steel & Sumikin Materials., Ltd.

Takashi Yamada

Tomohiro Uno

Daizo Oda

Teruo Haibara

Takashi Chuman

Shingo Iwasaki

Ryo Oishi

Atsushi Yoshizawa

Takamasa Yoshikawa

Nobuyasu Negishi

Kiyohide Ogasawara

Tetsuya Oyamada

Kazuto Sakemura

Motoki Eto

Fumio Matsui

Hiroshi Ito

Keiichi Kimura

Shinichi Terashima

Hideo Satoh

Takuya Hata

Shuuichi Yanagisawa

Akihito Nishibayashi

Kazuyuki Saito

Toshiyuki Miyadera

Atsuo Ikeda

Takayuki Kobayashi

Taishi Tsuji

Kohei Tatsumi

Shuichi Yanagisawa

Takumi Ohkabe

Takeru Okada

Makoto Okano

Takako Miyake

Noritoshi Araki

Shuuchi Yanagisawa

Kagehito Nishibayashi

Bonding wire for semiconductor devices contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.

Bonding wire for semiconductor devices

There is provided an Al bonding wire which can achieve a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The Al bonding wire is characterized in that the wire contains 0.02 to 1% by mass of Fe, further contains 0.05 to 0.5% by mass in total of at least one or more of Mn and Cr, and the balance includes Al and inevitable impurities, wherein a total content of Fe, Mn and Cr in solid solution is 0.01 to 1% by mass. The Al bonding wire contains Mn and Cr in addition to Fe, so that Fe, Mn and Cr can be promoted to form a solid solution in quenching treatment after the solution treatment. Accordingly, the Al bonding wire can achieve an effect of solid-solution strengthening of the wire due to the increase in the total content of Fe, Mn and Cr in solid solution and an effect of preventing recrystallization from proceeding during use of the semiconductor device at a high temperature for a long time.

Al bonding wire

In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.

Copper alloy bonding wire for semiconductor devices

There is provided a metal-coated Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the metal-coated Al bonding wire is operated. The bonding wire includes a core wire of Al or Al alloy, and a coating layer of Ag, Au or an alloy containing them formed on the outer periphery of the core wire, and the bonding wire is characterized in that when measuring crystal orientations on a cross-section of the core wire in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <111> angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction. Preferably, the surface roughness of the wire is 2 μm or less in terms of Rz.

Bonding wire

There is provided an Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The bonding wire is composed of Al or Al alloy, and is characterized in that an average crystal grain size in a cross-section of a core wire in a direction perpendicular to a wire axis of the bonding wire is 0.01 to 50 μm, and when measuring crystal orientations on the cross-section of the core wire in the direction perpendicular to the wire axis of the bonding wire, a crystal orientation <111> angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction.

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieve a favorable bond reliability of the 2nd bonding part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic % or more formed on a surface of the core material. The bonding wire is characterized in that:

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and reduces a galvanic corrosion in a high-temperature environment to achieve a favorable bond reliability of the 2nd bonding part. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic % or more formed on a surface of the core material. The bonding wire is characterized in that:

Provided is a Pd coated Cu bonding wire for a semiconductor device capable of sufficiently obtaining bonding reliability of a ball bonded portion in a high temperature environment of 175&#xb0; C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases. The bonding wire for a semiconductor device comprises a Cu alloy core material; and a Pd coating layer formed on a surface of the Cu alloy core material; and contains 0.03 to 2% by mass in total of one or more elements selected from Ni, Rh, Ir and Pd in the bonding wire and further 0.002 to 3% by mass in total of one or more elements selected from Li, Sb, Fe, Cr, Co, Zn, Ca, Mg, Pt, Sc and Y. The bonding wire can be sufficiently obtained bonding reliability of a ball bonded portion in a high temperature environment of 175&#xb0; C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases by being used.

Bonding wire for semiconductor device

The present invention has as its object the provision of a bonding wire for semiconductor devices mainly comprised of Ag, in which bonding wire for semiconductor devices, the bond reliability demanded for high density mounting is secured and simultaneously a sufficient, stable bond strength is realized at a ball bond, no neck damage occurs even in a low loop, the leaning characteristic is excellent, and the FAB shape is excellent. To solve this problem, the bonding wire for semiconductor devices according to the present invention contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.

A material for Cu pillars is formed as cylindrical preforms in advance and connecting these cylindrical preforms to electrodes on a semiconductor chip to form Cu pillars. Due to this, it becomes possible to make the height/diameter ratio of the Cu pillars 2.0 or more. Since electroplating is not used, the time required for production of the Cu pillars is short and the productivity can be improved. Further, the height of the Cu pillars can be raised to 200 &#x3bc;m or more, so these are also preferable for moldunderfill. The components can be freely adjusted, so it is possible to easily design the alloy components to obtain highly reliable Cu pillars.

Cu pillar cylindrical preform for semiconductor connection

The present invention provides a bonding wire for a semiconductor device, where the bonding wire can inhibit wear of capillary. In a Cu alloy bonding wire for a semiconductor device, a total of abundance ratios of a crystal orientations &#x3c;110&#x3e; and &#x3c;111&#x3e; having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis is to crystal orientations on a wire surface 40% or more and 90% or less, in average area percentage.

Cu alloy bonding wire for semiconductor device

It is an object to provide a Cu alloy bonding wire for a semiconductor device that can satisfy required performance in high-density LSI applications. In the Cu alloy bonding wire for a semiconductor device according to the present invention, each of abundance ratios of crystal orientations &#x3c;100&#x3e;, &#x3c;110&#x3e; and &#x3c;111&#x3e; having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis out of crystal orientations on a wire surface is 3% or more and less than 27% in average area percentage.

The present invention provides a bonding wire for a semiconductor device suitable for cutting-edge high-density LSIs and on-vehicle LSIs by improving the formation rate of Cu&#x2014;Al IMC in ball bonds. A bonding wire for a semiconductor device contains Pt of 0.1 mass % to 1.3 mass %, at least one dopant selected from a first dopant group consisting of In, Ga, and Ge, for a total of 0.05 mass % to 1.25 mass %, and a balance being made up of Cu and incidental impurities.

The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 &#x3bc;m in thickness.

The present invention provides a Cu alloy bonding wire for a semiconductor device, where the bonding wire can satisfy requirements of high-density LSI applications. In the Cu alloy bonding wire for a semiconductor device, the abundance ratio of a crystal orientation &#x3c;110&#x3e; having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis to crystal orientations on a wire surface is 25% or more and 70% or less in average area percentage.

Growing community of inventors

Saitama, Japan

Takashi Yamada