Murata Manufacturing Co., Ltd.

Sanyo Electric Co., Ltd.

Takashi Yamada

Satoshi Tanaka

Kenichi Shimamoto

Akihito Nagamatsu

Takanori Uejima

Kazuo Watanabe

Shigeharu Matsushita

Norio Hayashi

Yasoo Harada

Kiyoshi Aikawa

Takayoshi Higashino

Kazuma Sugiura

Emi Fujii

Toshikazu Terashima

Yuuri Honda

Satoshi Terada

Daijirou Inoue

Takashi Kurose

Kouji Matsumura

Yukiya Yamaguchi

Hiromichi Kitajima

Yasuhisa Yamamoto

Motoji Tsuda

Yuri Honda

Tetsuro Sawai

Yuji Takematsu

Dai Nakagawa

Kenji Tahara

Hiroki Fujiwara

Kimihiko Nagami

Yuuki Oomae

Seiichi Bamba

Haruo Nakano

Mayuka Ono

A radio-frequency module includes: plural electronic components that include plural bare SAW devices and that are disposed between a major surface of a module substrate and a major surface of a module substrate, on a major surface of the module substrate, and on a major surface of the module substrate; plural external connection terminals disposed on the major surface; and resin members. The resin member covers the plural SAW devices but does not fill between central regions of the plural bare SAW devices in which the IDT electrodes are disposed and the major surface to which plural bump electrodes are joined. The plural bare SAW devices are disposed on the major surface, and no bare SAW devices are disposed between the major surfaces and on the major surface.

Radio-frequency module and communication device

Gain is suppressed. In a power amplification circuit, a first transistor has a first input terminal, a first output terminal, and a first ground terminal. A second transistor has a second input terminal, a second output terminal, and a second ground terminal. The second input terminal is connected to the first input terminal. The second output terminal is connected to the first output terminal. A first bias circuit is connected to the first input terminal. A second bias circuit is connected to the second input terminal. A first resistor is connected between the first ground terminal and the ground. A second resistor is connected between the second ground terminal and the ground. The second resistor has a resistance value greater than that of the first resistor.

Power amplification circuit, radio-frequency circuit, and communication device

A power amplifier circuit includes a first transistor having the base coupled to an input terminal, the collector coupled to an output terminal, and the emitter coupled to ground, a first bias circuit coupled to the base of the first transistor via the first resistance element, a second transistor having the base coupled to the input terminal, the collector coupled to the output terminal, and the emitter coupled to ground, a second bias circuit coupled to the base of the second transistor via the second resistance element, and a first impedance circuit having a first end coupled between the base of the first transistor and the input terminal and a second end coupled between the first bias circuit and the first resistance element and being configured to be opened for a direct-current component and to be closed for an alternating-current component.

Power amplifier circuit

In a radio-frequency module, a conductive layer covers a major surface opposite to the mounting board side of a resin layer and a major surface opposite to the mounting board side of an electronic component. The electronic component includes an electronic component body and a plurality of outer electrodes. The electronic component body includes an electrical insulating portion and a conductive portion provided inside the electrical insulating portion, forming at least a portion of a circuit element of the electronic component. The electronic component body has a third major surface and a fourth major surface opposite to each other, and an outer side surface. The third major surface forms the major surface of the electronic component, and the third major surface is in contact with the conductive layer. The plurality of outer electrodes are provided on the fourth major surface, but are not extended over the third major surface.

A power amplifying circuit includes multi-stage power amplifiers, bias circuits, and a control circuit. The bias circuits output corresponding bias currents based on corresponding control currents. The control circuit outputs the control currents to the bias circuits based on a control voltage. The power amplifiers include a first stage of first and second power amplifiers connected in parallel electrically. The bias circuits include first and second bias circuits. The control circuit includes first and second current output units. The first current output unit outputs, to the first bias circuit, a first control current which has a first current value when the control voltage is a first threshold voltage, and which increases linearly with the control voltage, and the second current output unit outputs, to the second bias circuit, a second control current, having a second constant current value, when the control voltage is the first threshold voltage or greater.

Power amplifying circuit

A power amplifier module includes a substrate, an amplifier circuit including a plurality of transistors to be mounted on the substrate and a bump connected to the plurality of transistors, a harmonic termination circuit and an output matching circuit that are disposed in or on the substrate and configured to be electrically connected to the amplifier circuit, a connection pad disposed on the substrate and configured to be connected to the bump, and a plurality of connection wiring lines branching from the connection pad. The plurality of connection wiring lines include at least a first connection wiring line that connects the connection pad and the harmonic termination circuit to each other, a second connection wiring line that connects the connection pad and the output matching circuit to each other, and a third connection wiring line that connects the connection pad and an external power supply to each other.

Power amplifier module

A power amplifier circuit includes a power amplifier that amplifies an input signal and outputs the amplified signal from an output terminal thereof, a first filter circuit that has a frequency characteristic that attenuates an Nth-order harmonic of the amplified signal, N that is an integer greater than or equal to 2, and a second filter circuit that has a frequency characteristic that attenuates the Nth-order harmonic of the amplified signal. The first filter circuit includes a first capacitor and a first inductor. The first capacitor and the first inductor are connected in series between the output terminal and ground. The second filter circuit includes a second capacitor and a second inductor. The second capacitor and the second inductor are connected in series between the output terminal and ground.

A power amplifying circuit includes a first amplifying unit that amplifies a first radio-frequency signal and a second amplifying unit that amplifies a second radio-frequency signal. The first amplifying unit includes a first matching circuit that performs impedance matching for a circuit in a preceding stage, and a first amplifying circuit that amplifies the first radio-frequency signal that has passed through the first matching circuit. The second amplifying unit includes a second matching circuit that performs impedance matching for the circuit in the preceding stage, a resistor including a first end and a second end, the first end being electrically connected to the second matching circuit, and a second amplifying circuit that is electrically connected to the second end of the resistor and that amplifies the second radio-frequency signal that has passed through the resistor.

Power amplifying circuit and power amplifier

A semiconductor apparatus includes the following elements. A substrate includes a ground portion to which a ground potential is supplied. A semiconductor chip is mounted on the substrate and includes first and second output terminals, a first terminator, and a ground terminal. First and second amplifiers are respectively formed in first and second regions of the semiconductor chip and respectively amplify first and second input signals of first and second frequency bands and output first and second amplified signals from the first and second output terminals via first and second output wires. A first harmonic termination circuit includes a first wire which electrically connects the first terminator and the ground portion. A ground wire is disposed between the first wire and the second output wire in a plan view of a main surface of the semiconductor chip and electrically connects the ground terminal and the ground portion.

Semiconductor apparatus

A power amplifier has improved power added efficiency at high output power. The power amplifier includes: a first transistor for amplifying an input signal input to the base thereof and outputting the amplified signal from the collector thereof; a second transistor with power-supply voltage applied to the collector thereof to supply bias voltage or bias current from the emitter thereof to the base of the first transistor; a third transistor whose collector is connected to the collector of the first transistor to amplify the input signal input to the base thereof and output the amplified signal from a collector thereof; a fourth transistor whose base and collector are connected to supply bias from the emitter thereof to the base of the third transistor; and a first resistor with bias control voltage applied to one end thereof and the other end connected to the bases of the second and fourth transistors.

Power amplifier

A group III-V compound semiconductor doped with an impurity, having an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed on a crystal of Group III-V compound semiconductor in which the silicon in the SiOx film is diffused into the Group III-V compound semiconductor, thereby forming a doped layer.

Method of doping, semiconductor device, and method of fabricating

A method of doping a Group III-V compound semiconductor with an impurity, wherein after an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed in this order on a crystal of Group III-V compound semiconductor, the sample is subjected to at least one heat treatment to cause silicon in the SiOx film to diffuse into the Group III-V compound semiconductor, thereby forming a doped layer. Using this doped layer forming method, field-effect transistors, diodes, resistive layers, two-dimensional electron gas or one-dimensional quantum wires, zero-dimensional quantum boxes, electron wave interference devices, etc. are fabricated.

Method of doping a group III-V compound semiconductor

An active device such as an HEMT is formed on a GaAs substrate, and characteristics of this active device formed are measured. A circuit pattern of a passive circuit device including a serial microstrip line is simulated on the basis of the results of this measurement, and a circuit pattern obtained by the simulation is directly drawn on a substrate to form the passive circuit device, thereby to fabricate an MMIC. Accordingly, the passive circuit device is formed in conformity with the characteristics of the active device for each chip. As a result, the variation in characteristics of the active device is canceled, to obtain an MMIC superior in matching.

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Kyoto, Japan

Takashi Yamada