Showa Denko K.k.

Takashi Watanabe

Ryouichi Takeuchi

Atsushi Matsumura

A compound semiconductor light-emitting diode includes a light-emitting layer () formed of aluminum-gallium-indium phosphide, a light-emitting part () having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer () bonded to one of the outermost surface layers () of the light-emitting part () and transparent to the light emitted from the light-emitting layer (), and a bonding layer () formed between the supporting layer () and the one of the outermost surface layers () of the light-emitting part () containing oxygen atoms at a concentration of 1&#xd7;10cmor less.

Compound semiconductor light-emitting diode and method for fabrication thereof

A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in the middle between the compound semiconductor layer and the electric conductor. In the configuration of a light-emitting diode lamp, the electric conductor and the electrode disposed on the semiconductor layer on the side opposite to the electric conductor across the light-emitting layer are made to assume an equal electric potential by means of wire bonding. The light-emitting diode abounds in luminance and excels in electrostatic breakdown voltage.

Light-emitting diode and method for fabrication thereof

The present invention provides a semiconductor light-emitting device that includes a compound semiconductor layer formed by laminating a first clad layer, a light-emitting layer and a second clad layer, a plurality of first ohmic electrodes formed on the first clad layer, a plurality of second ohmic electrodes formed on the second clad layer, a transparent conductive film that is formed on the first clad layer of the compound semiconductor layer and is conductively connected to the first ohmic electrodes, a bonding electrode formed on the transparent conducting film, and a support plate that is positioned on the second clad layer side of the compound semiconductor layer and is conductively connected to the second ohmic electrodes.

Semiconductor light-emitting device and method for producing semiconductor light-emitting device

A compound semiconductor light-emitting diode includes a light-emitting layer () formed of aluminum-gallium-indium phosphide, a light-emitting part () having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer () bonded to one of the outermost surface layers () of the light-emitting part () and transparent to the light emitted from the light-emitting layer (), and a bonding layer () formed between the supporting layer () and the one of the outermost surface layers ()of the light-emitting part () containing oxygen atoms at a concentration of 1&#xd7;10cmor less.

Growing community of inventors

Chichibu, Japan

Takashi Watanabe