Canon Kabushiki Kaisha

Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Meiji Seika Pharma Co., Ltd.

Meiji Seika Kaisha, Ltd.

Canon Medical Systems Corporation

Kansai Paint Company, Ltd.

Toshiba Infrastructure Systems & Solutions Corporation

Riken Corporation

Tokico, Ltd.

Kabushiki Kaisha Yakult Honsha

Kyosan Electric Mfg. Co., Ltd.

Japanese Foundation for Cancer Research

Mitsubishi Heavy Industries Thermal Systems, Ltd.

Takashi Watanabe

Kazuaki Masuda

Akira Goto

Kazuyoshi Takahashi

Takeshi Chujoh

Akio Saito

Akiyuki Tanizawa

Toshio Kashino

Toshiaki Tanaka

Hiroshi Mano

Tsuyoshi Orikasa

Masami Ikeda

Nobuyuki Kuwabara

Hiroshi Sugitani

Shigeki Sato

Yoshifumi Hattori

Asao Saito

Takashi Ando

Seiichiro Karita

Teruo Arashima

Takashi Ishigami

Hiroshi Endo

Keiichi Murai

Hiroyuki Ishinaga

Tsutomu Abe

Toshiyuki Ono

Hitoshi Iwasaki

Kazuhiro Saito

Hiroyuki Kimura

Hajime Sato

Saori Asaka

Masayuki Tsurusaki

Kunihiko Maeoka

Motoaki Sato

Jun Takayasu

Masaaki Izumida

Dai Fukushima

Atsushi Matsumura

Koichi Sato

Tsuguhiro Fukuda

Eiichi Takagi

Nozomu Nakanishi

Makoto Katsuma

Masami Kasamoto

Jun Kawai

Toshiyuki Yanaka

Shigeo Toganoh

Tomoya Kodama

Takayuki Itoh

Nobuto Minowa

Manabu Sueoka

Osamu Sato

Masahiko Higuma

Akihiro Yamanaka

Akihiko Shimomura

Koichi Watanabe

Norio Ohkuma

Makiko Kimura

Masanori Ishikawa

Toshiaki Mabuchi

Megumi Saito

Masaaki Mitomi

Kenichi Kurihara

Hiroshi Nakagomi

Shoji Koike

Masashi Sahashi

Yutaka Koizumi

Koichi Washisu

Hiroki Tajima

Yasuhito Yoshimizu

Yasushi Miura

Hiroyuki Watanabe

Yasuo Sato

Hideo Saikawa

Shuhei Nitta

Itsuo Yuzurihara

Hiromi Fuke

Kunio Atsumi

Yasuyuki Takanaka

Haruyuki Matsumoto

Masatoshi Ikkatai

Kenichi Kimura

Osamu Ohara

Kenya Sano

Yoshiyuki Kimata

Keiichi Ajito

Mitsuru Shinohara

Masaki Inaba

Shinji Imada

Tatsuya Sato

Seiichi Kashiwaba

Eiki Shitara

Masakazu Ozawa

Makoto Ogawa

Shigeki Miura

Masayuki Nishiwaki

Yuko Kano

Masahiko Tsuzuki

Kazumi Yamamoto

A semiconductor manufacturing apparatus is a semiconductor manufacturing apparatus for holding a polishing object on a polishing head and polishing a surface of the polishing object. The semiconductor manufacturing apparatus includes a plurality of laser irradiation parts on the polishing head. At least one of the laser irradiation parts is a laser irradiation part configured to radiate a laser beam toward the back surface side of the polishing object.

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

This signal processing device includes one or more processors. The processors receive, as an input, an input signal that is a third signal obtained by superposing a second signal on a first signal or a fourth signal obtained by converting the third signal, and estimate a feature of the first signal on the basis of the input signal. The processors execute inference on the basis of the feature and outputs an inference result.

Device, method, and computer program product for executing inference using input signal

According to an embodiment, a first signal processing apparatus includes one or more hardware processors configured to function as a signal processing unit, a first signal adjustment unit, and an update unit. The signal processing unit is configured to perform first signal processing on an input signal in which a second signal is superimposed on a first signal using at least one parameter and to output a first restoration signal obtained by restoring the first signal. The first signal adjustment unit is configured to multiply at least one of the first signal and the first restoration signal by a weighting coefficient and to output a corrected first signal and a corrected first restoration signal. The update unit is configured to update the at least one parameter using an error between the corrected first signal and the corrected first restoration signal.

Signal processing apparatus, signal processing system, signal processing method, and computer program product

A video encoding apparatus is a video encoding apparatus for subjecting a video image to motion compensated prediction coding, comprising an acquisition module to acquire available blocks of blocks having motion vectors from encoded blocks adjacent to a to-be-encoded block and number of the available blocks, an acquisition/selection module to select one selection block from the encoded available blocks, a selection information encoder to encode selection information specifying the selection block using a code table corresponding to the number of available blocks, and an image encoder to subject the to-be-encoded block to motion compensated prediction coding using a motion vector of the selection block.

Video encoding apparatus and a video decoding apparatus

A device includes a first laser emitter, a second laser emitter, and a separating portion. The first laser emitter is configured to emit, in an outer circumferential portion of a bonded substrate including a first substrate and a second substrate bonded to each other, a first laser beam into the first substrate from a side of the first substrate to form a modified layer. The second laser emitter is configured to emit a second laser beam to a material layer that is arranged between the first substrate and the second substrate and is provided on the second substrate from a side of the second substrate, to cause peeling between the second substrate and the material layer. The separating portion is configured to separate an outer circumferential portion of the first substrate and an outer circumferential portion of the material layer from the outer circumferential portion of the bonded substrate.

Semiconductor manufacturing method and manufacturing device of edge laser removal of combined substrate

A method of manufacturing a semiconductor device, includes: alternately stacking a first film and a second film on a surface of a semiconductor substrate to form a multilayer film; partially removing the multilayer film to form stacks and a depression between one of the stacks and another one of the stacks and expose an end portion of the surface; forming a first insulating film to fill the depression; forming a first protective film on the stacks, the first insulating film, and the end portion; forming a second insulating film on the first protective film, the second insulating film overlapping at least a part of the other one of the stacks and the end portion; and removing the second insulating film in a thickness direction using chemical mechanical polishing.

Method of manufacturing semiconductor device having stacks on wafer

According to one embodiment, an anomaly detection apparatus includes a processing circuit configured to calculate a reconstruction error of an input signal being a time-series signal, calculate cycle information indicating cyclic property of the reconstruction error, and determine presence/absence of an anomaly signal in the input signal on the basis of the cycle information or the cycle information and the reconstruction error.

Anomaly detection apparatus, method, and program

In one embodiment, a semiconductor device includes a lower interconnect layer including a plurality of lower interconnects, and a plurality of lower pads provided on the lower interconnects. The device further includes a plurality of upper pads provided on the lower pads and being in contact with the lower pads, and an upper interconnect layer including a plurality of upper interconnects provided on the upper pads. The lower pads include a plurality of first pads and a plurality of second pads. The upper pads include a plurality of third pads provided on the second pads and a plurality of fourth pads provided on the first pads, a lower face of each third pad is larger in area than a upper face of each second pad, and a lower face of each fourth pad is smaller in area than a upper face of each first pad.

Semiconductor device and method of manufacturing the same

A semiconductor device according to one embodiment includes a substrate, a stacked body including conductive layers and insulating layers alternately stacked on the substrate, and first contact plugs individually connected to the conductive layers on an end of the stacked body. The semiconductor device includes, on the substrate, a lower layer three-dimensional structure including any of a lower layer inclined structure continuously inclined upward with respect to a flat surface of the substrate, a lower layer stepped structure inclined upward in a stepwise manner with respect to the flat surface, and a lower layer composite stepped structure in which planes parallel to the flat surface and slopes inclined upward with respect to the flat surface are alternately continuous. At least some of terrace regions being connection regions to the first contact plugs on top surfaces of the conductive layers are located on the lower layer three-dimensional structure.

Semiconductor device and manufacturing method thereof

Provided are 2-(piperidin-1-yl)pyrimidin-4(3H)-ones or pharmaceutically acceptable salts thereof, each characterized by having a 1,8-diazaspiro[4.5]deca-3-ene, 1-oxa-8-azaspiro[4.5]deca-3-ene, 2,8-diazaspiro[4.5]deca-3-ene, 2-oxa-8-azaspiro[4.5]deca-3-ene, 2,9-diazaspiro[5.5]undeca-3-ene, 1-oxa-9-azaspiro[5.5]undeca-3-ene, 1,9-diazaspiro[5.5]undeca-4-ene, or 3,9-diazaspiro[5.5]undeca-1-ene structure represented by the following general formula (1): 

Compound or pharmaceutically acceptable salt thereof

A semiconductor device according to an embodiment comprises a first chip and a second chip. The first chip includes a first wire, a first connection pad electrically connected to the first wire, and a first dummy pad. The second chip includes a second wire, a second connection pad electrically connected to the second wire and joined to the first connection pad, and a second dummy pad joined to the first dummy pad. A thickness of the first dummy pad is smaller than a thickness of the first connection pad and a thickness of the second dummy pad is also smaller than a thickness of the second connection pad, or the thickness of the first dummy pad is smaller than the thickness of the first connection pad or the thickness of the second dummy pad is smaller than the thickness of the second connection pad.

A semiconductor device according to the present embodiment includes a first chip and a second chip. A first pad is disposed so as to be exposed from a first region on a first surface. A first mark is provided by a first pattern and is disposed so as to be exposed from a second region. The second chip includes a second substrate, a second wire, a second pad, and a second mark. The second wire is disposed on the second substrate. The second pad is disposed so as to be exposed from a third region on a second surface, and is electrically connected to the second wire and the first pad. The second mark is provided by a second pattern corresponding to the first pattern, is disposed so as to be exposed from a fourth region, and has a thinner thickness than the second pad.

A polishing apparatus includes a holder holding a target. A polisher polishes the target. An irradiator irradiates the target with an irradiation light from below the polisher. A photoreceiver receives a reflection light reflected from the polishing target to detect a relation between a wavelength and a light quantity of the reflection light. A first reflector bends the irradiation light from the irradiator in a direction tilted to the polishing target. A second reflector bends the reflection light from the polishing target to the photoreceiver. The first reflector irradiates the polishing target with the irradiation light in a direction tilted to the polishing target.

Polishing apparatus and polishing pad

Growing community of inventors

Yokohama, Japan

Takashi Watanabe