Canon Kabushiki Kaisha

Takashi Usui

Takehito Okabe

Masatsugu Itahashi

Sho Suzuki

Keita Torii

Tetsuo Takahashi

Hideki Ina

Mineo Shimotsusa

Yusuke Onuki

Hiroaki Sano

Junji Iwata

Taro Kato

Hiroaki Naruse

Takaharu Kondo

Tadashi Sawayama

Akihiro Kawano

Kentarou Suzuki

Shunsuke Takimoto

Atsushi Kanome

Daisuke Okabayashi

Daisuke Uki

Takuji Mukai

Yoshiharu Sawada

A semiconductor apparatus include a first electrode, an insulating layer covering an end of the first electrode, a functional layer arranged on the first electrode and the insulating layer, and a second electrode arranged above the functional layer, wherein, in a cross-section passing through the insulating layer, and the first electrode, the insulating layer includes a first portion having a side surface inclining at an angle of 45&#xb0; or more and 90&#xb0; or less, a second portion having a side surface inclining at an angle smaller than 45&#xb0;, and a third portion below the first portion, and having a side surface inclining at an angle smaller than 45&#xb0;, and wherein a length of the second portion in a direction vertical to the first electrode is larger than that of the third portion.

Semiconductor apparatus, display apparatus, photoelectric conversion apparatus, electronic device, illumination apparatus, and movable body

A method of manufacturing a semiconductor device is provided. The method comprises forming a first insulator above the substrate, forming a second insulator on the first insulator, performing a first etching process of etching the second insulator by fluorine and hydrogen contained gas to expose the first insulator while leaving a portion of the second insulator which covers a side face of the gate electrode and performing a second etching process of etching a portion of the first insulator exposed by the first etching process. The first etching process includes a first process and a second process performed after the first process. A reaction product is less deposited in the first process than in the second process and etching selectivity of the second insulator with respect to the first insulator is higher in the second process than in the first process.

Method of manufacturing semiconductor device

A photoelectric conversion device includes a waveguide member disposed above a photoelectric conversion unit, and an insulating member disposed above a substrate, and surrounding at least part of the waveguide member. The waveguide member has a first side face, a second side face, and a third side face, arranged in that order from the substrate. An angle of inclination of the first side face is smaller than an angle of inclination of the second side face. An angle of inclination of the third side face is smaller than the angle of inclination of the second side face. The angle of inclination of the second side face is smaller than 90 degrees.

Photoelectric conversion device and manufacturing method of the same having waveguide inclined side face with improved sensitivity by increasing reflection rate of light reaching side face near incident face or entrance face of waveguide

A method of manufacturing a semiconductor device, comprising forming an insulating member on a structure having a height difference, and forming openings in the insulating member, the forming openings including first etching under a condition with a microloading phenomenon and second etching under a condition with a reverse microloading phenomenon, wherein the first etching is stopped before an upper face of the structure is exposed and then the second etching is started.

A substrate includes a first region having photoelectric conversion portions and a second region having an element included in a signal processing circuit. An insulator including first and second parts respectively arranged on the first and second regions is formed on the substrate. Openings are formed in the insulator and respectively superposed on the photoelectric conversion portions. A first member is formed in the openings and on the second part of the insulator after forming the openings. At least a portion of the first member arranged on the second region is removed. The first member is planarized after removing at least the portion of the first member. A second insulator is formed on the first and second regions after planarizing the first member. A through-hole is formed in a part of the second insulator. No planarization with grinding is performed after forming the second insulator and before forming the through-hole.

Manufacturing method of semiconductor device

A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.

Solid-state image pickup apparatus, image pickup system including solid-state image pickup apparatus, and method for manufacturing solid-state image pickup apparatus

A semiconductor device manufacturing method is provided. The method includes forming a first, second and third films, forming a first mask pattern on the third film, forming a gate electrode by using the first mask pattern, forming a second mask pattern having an opening above a portion of the first mask pattern and a region adjacent to the gate electrode, and performing ion implantation by using the first and second mask patterns. The gate electrode formation includes etching the third film, etching the second film and overetching the second film by using a first, second and third processing gases. A first, second and third depositions formed on the sidewalls of the gate electrode in the third and second films etching and overetching, contain at least one of chlorine or bromine and do not contain fluorine.

Semiconductor device manufacturing method

There are provided a first waveguide member in an imaging region and a peripheral region of a semiconductor substrate and a via plug penetrating the first waveguide member.

Semiconductor device and method for manufacturing the same

The method includes a step of forming a mask having an opening, for forming an opening in multiple insulating films, above a semiconductor substrate on which a member becoming a first insulating film, a member becoming a second insulating film being different from the member becoming the first insulating film, a member becoming a third insulating film, and a member becoming a fourth insulating film being different from the member becoming the third insulating film are stacked in this order; a first step of continuously removing the member becoming the fourth insulating film and the member becoming the third insulating film at a portion corresponding to the opening of the mask; and a second step of removing the member becoming the second insulating film, after the first step, at a portion corresponding to the opening of the mask.

Growing community of inventors

Ashigarakami-gun, Japan

Takashi Usui