Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Pansonic Corporation

Takashi Uno

Kazuhiro Yahata

Daisuke Hosokawa

Fumitaka Ogasawara

Koji Yoshino

Motoyoshi Iwata

Mikio Fukui

Hiroshi Naitou

Tomohide Kamiyama

Hikaru Ikeda

Yoshiharu Oomori

Toshio Ishizaki

Shinji Takano

Hiroyuki Sakai

Naohiro Tsurumi

Kazuki Maeda

Masayoshi Hiramoto

Yasuhiro Kumamoto

Toshiyuki Okajima

Hideki Nakamura

Chikako Hosokawa

A microwave treatment device comprises: a heating chamber that accommodates an object to be heated; a microwave generator that generates a microwave in a specified frequency band; an amplifier that amplifies the microwave; a feeding unit that supplies the amplified microwave to the heating chamber; a detector that detects a reflected microwave power; and a controller. The controller selects one of plural frequencies in the specified frequency band and causes the microwave generator to generate the microwave with the selected frequency. The controller causes the amplifier to change an output power of the microwave so that the microwave supplied to the heating chamber has one of plural output powers. The controller measures a reflected microwave frequency characteristic based on reflected microwave powers detected under each of a condition that the microwave has a first output power and a condition that the microwave has a second output power.

Microwave treatment device

An RF energy radiation device of this disclosure comprises: an oscillator; a power amplifier; a radiation element; a detector; and a controller. The oscillator generates an RF signal. The power amplifier amplifies the RF signal to output RF power. The radiation element radiates the RF power. The detector detects progressive wave power. The controller performs an RF power output control using a closed-loop control for setting an output set value of the RF power by a closed-loop and an open-loop control for setting the output set value of the RF power by an open-loop. In a burst operation alternately switching between a period of outputting the RF power and a period of stopping the RF power, the controller changes the RF power output control from the closed-loop control to the open-loop control when a specified condition for change is satisfied during the period of stopping the RF power.

Rf energy radiation device

A microwave heating device includes: a heating chamber for accommodating a heating target object, a microwave generator for generating a microwave, and a coaxial connector. The coaxial connector includes a center conductor, an insulator, and an external conductor. The center conductor is connected to an output terminal of the microwave generator. An air gap is defined between the center conductor and the insulator.

Microwave heating device

A high-frequency heating apparatus according to an embodiment of the present disclosure includes a heating chamber, an electrode, a high-frequency power supply, at least one matching element, and a controller. The heating chamber accommodates a heating target. The high-frequency power supply applies a high-frequency voltage to the electrode. The impedance matcher includes at least one matching element having a matching constant that is variable. The controller stops the high-frequency power supply to complete heating based on a temporal change of the matching constant of the at least one matching element. In this embodiment, a heating target can be heated efficiently.

High-frequency heating apparatus

A microwave treatment device includes a heating chamber for accommodating a heating target, a microwave generator, a feeder, a detector, and a controller. The microwave generator generates a microwave having a frequency in a specified frequency band. The feeder radiates the microwave inside the heating chamber. The detector detects a reflected microwave power reflected from the heating chamber. The controller causes the microwave generator to execute a frequency sweeping in the specified frequency band, and controls the microwave generator according to a temporal change in a frequency characteristic of the reflected microwave power. The temporal change in the frequency characteristic of the reflected microwave power is based on the frequency of the microwave, a level of the reflected microwave power, and a time passed from a start of heating. Thus, it is possible to accurately recognize the progress of cooking while heating the object.

A high-frequency heating apparatus includes: a heating chamber for accommodating a load; a microwave source; at least one radiator; a temperature detector; and a controller. The microwave source generates a microwave and adjusts the frequency and output of the microwave. The at least one radiator radiates a microwave into the heating chamber. The temperature detector detects the temperature in the heating chamber. The controller causes the microwave source to adjust the output of the microwave based on the temperature profile that defines the temperature change in the load, and the temperature in the heating chamber. According to this aspect, food can be heated in accordance with the temperature profile appropriate for the cooking recipe, thereby ensuring the quality of cooked food.

A microwave treatment device of the present disclosure includes heating chamber () for accommodating object () to be heated, microwave generator (), heater (), power feeder (), detector (), and controller (). Microwave generator () generates microwaves. Heater () includes a heat source other than the microwaves and heats an inside of heating chamber (). Power feeder () supplies the heating chamber with the microwaves. Detector () detects reflected power from power feeder (). Controller () controls heater () and microwave generator (). When heater () carries out heating, Controller () causes microwave generator () to generate the microwaves in heating by heater (). The microwaves have output power such that the reflected power at a level detectable by detector () returns. By present disclosure, by understanding progress of cooking, a heating target can be appropriately cooked.

A high frequency heating apparatus of the present disclosure includes a first electrode (), a second electrode (), a high frequency power supply, a position adjuster (), and a controller. The second electrode () is disposed facing the first electrode (). The high frequency power supply supplies high frequency power to the first electrode () or the second electrode (). The position adjuster () adjusts the position of the first electrode (). The controller controls the position adjuster (). The position adjuster () includes a weight (), one or more connecting lines (), one or more pulleys (), and one or more drive units (). The one or more connecting lines () connect the weight () and the first electrode (). The one or more pulleys () support the one or more connecting lines (). The one or more drive units () are attached to the one or more pulleys () and drive the one or more pulleys (). In this embodiment, a heating target can be heated efficiently.

High frequency heating apparatus

A high frequency heating apparatus (A) includes the following components: a first electrode () that is flat; a plurality of flat second electrodes () that are flat; a high-frequency power supply (); a matching unit (); a controller (); and an electric field regulator (). The second electrodes () are placed opposite to the first electrode (). The high-frequency power supply () applies a high-frequency voltage to the first electrode (). The matching unit () is placed between the first electrode () and the high-frequency power supply (), and is impedance-matched with the high-frequency power supply (). The controller () controls the high-frequency power supply (). The electric field regulator () individually adjusts the electric field strengths in a plurality of regions located between first electrode () and the second electrodes (). This aspect can reduce uneven heating.

A semiconductor device is provided that is inexpensively manufactured with variation in high-frequency characteristics suppressed. Internal matching circuit boards are disposed on at least one signal transmission path of an input-side signal transmission path between an input terminal and a semiconductor element and an output-side signal transmission path between the semiconductor element and an output terminal and is provided for matching at least between output impedance of an external circuit connected to the input terminal and input impedance of the semiconductor device or between input impedance of an external circuit connected to the output terminal and output impedance of the semiconductor device, and components are electrically connected by at least one wire causing a change exceeding an allowable value in high-frequency characteristics of the semiconductor device due to a change in wire length and are disposed in contact with each other inside a package.

Semiconductor device

A resin package includes: a die pad having a main surface on which a semiconductor substrate and a matching circuit substrate is mounted; at least one lead terminal electrically connected to the semiconductor substrate and the matching circuit substrate; a thin plate fixed to at least one of the main surface of the die pad and a main surface of the at least one lead terminal; and molding resin which covers the semiconductor substrate, the matching circuit substrate, and the thin plate.

Resin package

A radio frequency amplifier circuit includes a transistor and an output-side matching circuit. The output-side matching circuit includes a first distributed constant line to which a radio frequency signal from the transistor is transmitted, a flat plate lead terminal transmitting the radio frequency signal from the first distributed constant line to an outside of the package, and a capacitive element having one electrode that is connected to the lead terminal and the other electrode that is grounded. A back surface of the lead terminal is joined to a resin substrate, and the capacitive element and the first distributed constant line are disposed adjacent to each other, with an alignment direction of the capacitive element and the first distributed constant line intersecting an alignment direction of the first distributed constant line and the lead terminal.

Radio frequency amplifier circuit

A radio frequency power amplifier includes: an amplifying element which amplifies an input signal and outputs the signal from an output terminal; and an output load circuit which includes a first resonant circuit and a second resonant circuit that are connected to the output terminal. The first resonant circuit has a resonance frequency higher than the frequency of the second harmonic of the input signal, and the second resonant circuit has a resonance frequency lower than the frequency of the third harmonic of the input signal. The output load circuit has such an impedance looking from the output terminal that a phase of a reflection coefficient at the second harmonic of the input signal is greater than 180 degrees and less than 360 degrees, and a phase of a reflection coefficient at the third harmonic of the input signal is greater than 0 degrees and less than 180 degrees.

Radio frequency power amplifier

A semiconductor package according to the present invention includes: a semiconductor element where a high frequency signal is input or output; a planar lead terminal having an end electrically connected to an input terminal or an output terminal of the semiconductor element; an encapsulation resin for encapsulating the lead terminal and the semiconductor element, the lead terminal having another end exposed from the resin; and a ground enhancing metal body encapsulated in the encapsulation resin, having a first main surface facing the lead terminal and a second main surface exposed from the encapsulation resin, wherein the ground enhancing metal body has a shape with a cross section parallel to the second main surface and having a smaller area than an area of the first main surface.

Semiconductor package, method and mold for producing same, input and output terminals of semiconductor package

A radio frequency amplifier circuit includes: low-output transistors, each of which includes an input terminal, an output terminal, and a ground terminal, and amplifies a radio frequency signal; a harmonic processing circuit provided for each of the low-output transistors to be connected to the output terminal of the low-output transistor, and processing a secondary harmonic included in an amplified radio frequency signal, and a resistor connected to the output terminal of each of the low-output transistors. The input terminal of each of the low-output transistors is connected to an input terminal of the radio frequency amplifier circuit via an inductor, and the output terminal of each of the low-output transistors is connected to the other output terminal via the resistance and is further connected to an output terminal of the radio frequency amplifier circuit via an inductor.

Growing community of inventors

Hyogo, Japan

Takashi Uno