Hoya Corporation

Hitachi-kokusai Electric Inc.

Max Co., Ltd.

National Institute of Radiological Sciences

Chiyoda Technol Corporation

Takashi Uchida

Hiroaki Shishido

Masaki Suto

Atsushi Matsumoto

Yoichi Okubo

Noriyuki Kagaya

Hideaki Takahashi

Osamu Nozawa

Kazuhiro Hamamoto

Ryo Ohkubo

Naoki Hongo

Toshio Takada

Masato Horaguchi

Kiyoshi Funada

Morio Yamaguchi

Kotaro Takenaga

Yasuo Sera

Hidefumi Ito

Terufumi Nagano

Takashi Moritake

Shoji Fujimoto

Junetsu Urata

Saburo Fujisaki

Masahiro Himono

Yasuhiro Koguchi

Hiroshi Mizushima

Kiyoshi Matsuno

A reflective film coated substrate includes a substrate having two main surfaces opposite to each other and end faces connected to outer edges of the two main surfaces; and a reflective film formed on one of the main surfaces and extending onto at least part of the end faces. The reflective film on the main surface has a multilayer structure including low refractive index layers and high refractive index layers alternately formed. The reflective film which extends onto the end faces has a single-layer structure containing a first element higher in content than any other element in the low refractive index layers and a second element higher in content than any other element in the high refractive index layers.

Reflective film coated substrate, mask blank, reflective mask, and semiconductor device manufacturing method

In the present invention, an etching stopper film (), a light-blocking film () comprising a material containing one or more elements selected from among silicon and tantalum, and a hard mask film () are laminated in that order on a translucent substrate (). The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atom % or more, the maximum peak in a N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and a Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a bond energy of 574 eV or less.

Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

In the present disclosure, an etching stopper film, a light shielding film comprising a material containing one or more elements selected from silicon and tantalum, and a hard mask film are laminated in that order on a transparent substrate. The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atomic % or more, the maximum peak in N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a binding energy of 574 eV or less.

According to the present invention, provided is a mask blank (), in which: a light shielding film () has a single layer structure or a laminate structure of a plurality of layers; at least one layer of the light shielding film () is formed of a material which contains a transition metal and silicon and is free from nitrogen and oxygen, or a material which contains a transition metal, silicon, and nitrogen and satisfies a condition of the following expression (1); a phase shift film () has a surface layer and a layer other than the surface layer; and the layer other than the surface layer is formed of a material which contains a transition metal, silicon, nitrogen, and oxygen, has a content of oxygen of 3 atom % or more, and satisfies a condition of the following expression (A).&#x2264;9.0&#xd7;10&#x2212;1.65&#xd7;10&#x2212;7.718&#xd7;103.611&#x2212;21.084&#x2003;&#x2003; Expression (1)0.04&#x2212;0.06&#x3e;1&#x2003;&#x2003;Expression (A)

Mask blank, phase shift mask and method for manufacturing semiconductor device

To provide a phase-shift mask in which the reduction in thickness of a light-shielding film is provided when a transition metal silicide-based material is used for the light-shielding film and by which the problem of ArF light fastness can be solved; and a mask blank for manufacturing the phase-shift mask. A mask blank has a structure in which a phase-shift film, an etching stopper film, a light-shielding film, and a hard mask film are laminated in said order on a transparent substrate, and at least one layer in the light-shielding film is made of a material which contains transition metal and silicon, and satisfies the conditions of Formula (1) below:&#x2264;9.0&#xd7;10&#x2212;1.65&#xd7;10&#x2212;7.718&#xd7;10+3.611&#xd7;&#x2212;21.084 &#x2003;&#x2003;Formula () wherein Ris a ratio of the content of transition metal to the total content of transition metal and silicon in said one layer, and Cis the content of nitrogen in said one layer.

Mask blank, phase-shift mask and method for manufacturing semiconductor device

A mask blank having a structure in which, on a transparent substrate, a light shielding film and a hard mask film are laminated in the stated order from the transparent substrate side. The hard mask film is formed of a material containing at least one element selected from silicon and tantalum, and the light shielding film is formed of a material containing chromium. The mask blank has a structure of three layers wherein a lower layer, an intermediate layer, and an upper layer are laminated in the stated order from the transparent substrate side. The upper layer has a lowest content of chromium in the light shielding film, the intermediate layer has a highest content of chromium in the light shielding film. It contains at least one metallic element selected from indium, tin, and molybdenum.

Mask blank, method of manufacturing phase shift mask, phase shift mask, and method of manufacturing semiconductor device

A mask blank having a structure in which, on a transparent substrate, a phase shift film, a light shielding film, and a hard mask film are laminated in the stated order from the transparent substrate side. The phase shift film is formed of a material containing silicon, the hard mask film is formed of a material containing at least one element selected from silicon and tantalum, and the light shielding film is formed of a material containing chromium. The mask blank has a structure in which the following three layers: a lower layer, an intermediate layer, and an upper layer are laminated, the upper layer having a highest content of chromium in the light shielding film, the intermediate layer having a lowest content of chromium in the light shielding film, and containing at least one metallic element selected from indium, tin, and molybdenum.

To provide a phase-shift mask in which the reduction in thickness of a light-shielding film is provided when a transition metal silicide-based material is used for the light-shielding film and by which the problem of ArF light fastness can be solved; and a mask blank for manufacturing the phase-shift mask. A mask blankcomprises a phase-shift filmand a light-shielding filmon a transparent substrate, the phase-shift filmis made of a material with ArF light fastness, and at least one layer in the light-shielding filmis made of a material which contains transition metal, silicon, and nitrogen, and satisfies the conditions of Formula (1) below:&#x2264;9.0&#xd7;10&#x2212;1.65&#xd7;10&#x2212;7.718&#xd7;10+3.611&#xd7;&#x2212;21.084&#x2003;&#x2003;Formula (1)

Dosimetersare housed in dosimeter housing pocketsof a dosimeter fitting wear including: wear main bodieswhich cover measuring positions on at least subject bodies, and, and can be detachably fitted on the subject bodies, and the dosimeter housing pocketsprovided at positions that come to the measuring positions when the wear main bodies are fitted on the subject bodies, and then the wear main bodies are fitted on the subject bodies. Thereby, a number of dosimeters can be easily fitted on or detached from the surfaces of subject bodies without hindering medical activities, and set positions of the dosimeters can be easily reproduced.

Dosimeter fitting wear and body surface exposure dose distribution measuring method and apparatus using the same

The radio signal receiving device that has an input terminal for inputting an input signal and an output terminal for amplifying the signal inputted to the input terminal and then outputting the signal, comprises an insulating container comprising the input terminal and the output terminal, and an amplifier that is contained in the insulating container and amplifies the signal and then outputs the signal as the output signal. Bias voltage from one of the amplifier input terminal of the amplifier and the amplifier output terminal of the amplifier is applied to the output signal outputted to the amplifier output terminal of the amplifier.

Radio signal receiving device

The present invention relates to an economical and highly reliable receiving apparatus for receiving radio signals transmitted from a mobile communication terminal within radio zone. The receiving apparatus has antenna sections that receive radio signals transmitted from the mobile communication terminal and are provided in each of a plurality of sectors divided from the radio zone, and receiving units that are provided in each of the antenna sections and that perform a predetermined process to the radio signals received by the antenna section.

Receiving apparatus

To update the control value to a value of higher precision in a predistortion type distortion compensation apparatus for compensating the distortion occurring in an amplifier for amplifying an input signal by the control using a control value corresponding to the level of the input signal. Distortion generating means () generates distortion in an input signal, input signal level detecting means () detects the level of the input signal, distortion control means () controls the distortion generated by the distortion generating meansby using a control value corresponding to the level of the detected input signal, distortion component level detecting means () detects the level of distortion component contained in the amplified signal issued from the amplifier (), integrating means Kto KN integrate the level of the distortion component detected at every level of the detected input signal, and control value updating means () updates the control value corresponding to the level so that the integration result at every level of the input signal may be small.

Predistortion type distortion compensation apparatus

Disclosed is an amplifier apparatus that corrects mismatching of the filter transmission characteristic due to a change in the temperature of the amplifier apparatus itself and thereby stably amplifies the high-frequency signal. The amplifier apparatus converts a signal to be processed into one having an intermediate frequency band to thereby execute amplification processing. It comprises a local oscillator the oscillation frequency of that can be altered, a first frequency converter that converts the signal by the use of the oscillation frequency from the local oscillator into an intermediate frequency, a first band pass filter that band-limits the signal having the intermediate, an amplifier that amplifies the signal of the intermediate frequency that has passed therethrough, a second band pass filter that band-limits the signal of the intermediate frequency that has been output therefrom, a second frequency converter that converts the signal of the intermediate frequency that has passed therethrough into the original frequency by the use of the local-oscillation frequency, a temperature sensor that detects the temperature of each of the first and second filters , and a controller that alters the oscillation frequency of the local oscillator in correspondence with the detected temperature and thereby stabilizes the transmission characteristic of each of the first and second filters irrespective of the change in the temperature.

Amplifier apparatus and method for controlling a local oscillator frequency based on the detected temperature of if bandpass filters

An electronic apparatus includes a thermally insulated vessel having a cooling part therein. Disposed inside the thermally insulated vessel are a first electronic part and a second electronic part. The second electronic part is spaced apart from the cooling part while the first electronic part is in direct contact with the cooling part, such that the two electronic parts can operate at different cooling temperatures.

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Tokyo, Japan

Takashi Uchida