Tokyo Electron Limited

Takashi Tsunoda

Akihiro Kikuchi

Yuichiro Sakamoto

A plasma etching method includes the step of: etching a silicon layer of a target object by using a plasma generated from a processing gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a rare gas and an Ogas and by employing a patterned resist film as a mask. The target object includes the silicon layer whose main component is silicon and the patterned resist film formed over the silicon layer.

Plasma etching method, plasma processing apparatus, control program and computer readable storage medium

A difference in etching rate between the coated silicon based insulating film and any of other kinds of silicon-based insulating films is reduced by using nitrogen gas as a part of the etching gas. Therefore, the underlying film may not be exposed to the etching gas for a long time, so that degradation or deterioration of the underlying film can be prevented.

Growing community of inventors

Kofu, Japan

Takashi Tsunoda