Sumitomo Electric Industries, Limited

Kyoto University

Toyohashi University of Technology

Takashi Tsuno

Takahiro Imai

Naoji Fujimori

Toru Hiyoshi

Yoshiyuki Yamamoto

Yoshiaki Kumazawa

Hiromu Shiomi

Hirotaka Oomori

Hirohisa Saito

Satoshi Hatsukawa

Keiichiro Tanabe

Kosuke Uchida

Takeyoshi Masuda

Keiji Wada

Nobuo Shiga

Akihiko Ikegaya

Satoshi Fujii

Nobuhiro Ota

Yu Saitoh

Katsuko Yamamoto

Kazuhiro Fujikawa

Kenichi Hirotsu

Yuichiro Seki

Takashi Ohira

Katsuyuki Tanaka

Toshikazu Shibata

Takahisa Iguchi

Kazuyuki Wada

Kentaro Yoshida

Takashi Hikihara

Katsuko Harano

Tuya Wuren

Takefumi Shimoguchi

Naoji Fujimoro

Tsuguhiro Takuno

Kotaro Tanimura

A semiconductor module includes a base member including a circuit board on which a positive electrode pad and a negative electrode pad are provided and on which a semiconductor device is mounted to be electrically coupled to the positive electrode pad and the negative electrode pad, a housing that is attached to the base member so as to surround the positive electrode pad and the negative electrode pad, the housing being formed in a frame shape, a first electrode plate that is electrically coupled to the positive electrode pad, the first electrode plate having a flat plate portion, and a second electrode plate that is electrically coupled to the negative electrode pad, the second electrode plate having a flat plate portion. The flat plate portion of the first electrode plate and the flat plate portion of the second electrode plate are arranged in a parallel-plate configuration within the housing.

Semiconductor module

A silicon carbide semiconductor device has a gate insulating film, a first gate electrode, a first electrode, a second electrode, and a gate runner. A silicon carbide substrate has a first main surface and a second main surface. The silicon carbide substrate includes a first impurity region, a second impurity region, and a third impurity region. The first main surface is provided with a gate electrode trench and a gate runner trench. The gate electrode trench is defined by a side surface and a bottom surface continuous to the side surface. The gate insulating film is in contact with both the side surface and the bottom surface. The first gate electrode is provided on the gate insulating film. The second gate electrode is provided in the gate runner trench, and is electrically connected to the first gate electrode. The gate runner is provided on the second gate electrode.

Silicon carbide semiconductor device

A semiconductor device includes a base plate; a metal plate above the base plate; a bonding material between the base plate and metal plate, bonding the metal plate to the base plate; an insulating plate on the metal plate; a circuit member on the insulating plate; a semiconductor element mounted on the circuit member; and a sealing material to seal a space on the base plate. The metal plate includes a bottom surface area along a periphery, exposed from the bonding material. The base plate includes a groove-shaped first recess formed along the periphery of the metal plate and faces the bottom surface area. The base plate also includes a groove-shaped second recess that is spaced apart from the first recess and that is formed on the inner side relative to the first recess. The bonding material is disposed in at least a part of the second recess.

Semiconductor device

A semiconductor apparatus includes a base plate, a metal plate disposed on the base plate, a bonding material disposed between the base plate and the metal plate to be in surface-to-surface contact with the base plate and the metal plate to bond the metal plate to the base plate, an insulating plate disposed on the metal plate, a circuit member disposed on the insulating plate to be in surface-to-surface contact with the insulating plate, a semiconductor device mounted on the circuit member, and an encapsulating material covering the metal plate, the bonding material, the insulating plate, the circuit member, and the semiconductor device to encapsulate an area over the base plate, wherein a bottom face area of the metal plate along the outer perimeter of the metal plate is not covered with the bonding material, wherein the base plate has a groove-shape recess that is disposed along the outer perimeter of the metal plate to face the bottom surface area, wherein the recess has an area having a first depth and a deeper area deeper than the first depth, and the deeper area is disposed beside an inner-side sidewall of the recess, and wherein at least a portion of the deeper area has the bonding material disposed therein.

Semiconductor apparatus

A silicon carbide semiconductor device includes: a drift layer in contact with a first main surface and having a first conductivity type; a body region located in the drift layer, in contact with the first main surface, and having a second conductivity type; and a protruding portion having the second conductivity type and connected to a bottom of the body region. A manufacturing method includes forming, in the drift layer of a silicon carbide substrate, by ion implantation, the body region, the protruding portion, a JTE region, and at least one guard ring region, each having the second conductivity type.

Silicon carbide semiconductor device and method of manufacturing the same

A silicon carbide semiconductor device includes a gate insulating film and a gate electrode. A first main surface is provided with a trench defined by a side surface penetrating a third impurity region and a second impurity region to reach a first impurity region, and a bottom provided continuously with the side surface. In a stress test in which a gate voltage of at least one of &#x2212;10 V and 20 V is applied to the gate electrode for 100 hours at a temperature of 175&#xb0; C., where a threshold voltage before the stress test is defined as a first threshold voltage and a threshold voltage after the stress test is defined as a second threshold voltage, an absolute value of a difference between the first threshold voltage and the second threshold voltage is not more than 0.25 V. The second threshold voltage is not less than 2.5 V.

A silicon carbide semiconductor device has a silicon carbide substrate, a gate insulating film, and a gate electrode. Silicon carbide substrate includes a first impurity region having a first conductivity type, a well region being in contact with the first impurity region and having a second conductivity type which is different from the first conductivity type, and a second impurity region separated from the first impurity region by the well region and having the first conductivity type. The gate insulating film is in contact with the first impurity region and the well region. The gate electrode is in contact with the gate insulating film and is arranged opposite to the well region with respect to the gate insulating film. A specific on-resistance at a voltage which is half a gate driving voltage applied to the gate electrode is smaller than twice the specific on-resistance at the gate driving voltage.

A silicon carbide semiconductor device includes a silicon carbide layer, a body region, a source region, a gate insulating film, a gate electrode, a source electrode, a first impurity region, and a second impurity region. The second impurity region is disposed within the silicon carbide layer so as to connect the body region and the first impurity region to each other, and has a second conductivity type. An impurity concentration in the second impurity region is equal to or higher than an impurity concentration in the silicon carbide layer and equal to or lower than a lower limit of an impurity concentration in the body region.

To realize a transmission function of power line communication by a further simplified and cost-effective circuit configuration, in a PLC modem installed in an electric appliance such as a household electrical appliance. A semiconductor switching element that is present on an electric circuit connected to a power line is driven by a modulator unit. The modulator unit controls ON/OFF operations of the semiconductor switching element, to thereby cause a communication signal of a modulated rectangular wave to be output to the power line for a prescribed period.

Power line communication device, power supply circuit with communication function, electric appliance, and control and monitoring system

A switching power source according to one embodiment includes a first transistor and a second transistor. The first transistor is connected to a positive electrode of a DC voltage source. The second transistor is connected between the first transistor and a negative electrode of the DC voltage source. The first transistor and the second transistor are alternately placed in conducting state. A gate signal is applied to a gate terminal of the first transistor with reference to a voltage of a terminal of the first transistor that is connected to the positive electrode. A gate signal is applied to a gate terminal of the second transistor with reference to a voltage of a terminal of the second transistor that is connected to the negative electrode. The first transistor and the second transistor are configured with wide bandgap semiconductors of mutually different materials, respectively.

Switching power source

A switching circuitcomprises a connection circuit cascade-connecting control terminals for controlling switching of n number of transistors M-Mn via n&#x2212;1 number of coils Lrespectively (n is an integer equal to or more than 2; and coils Lrespectively connected between one end of each of the transistors M-Mn and other end of a coil L, one end of the coil Lbeing electrically connected to a DC power source. The transistors M-Mn is sequentially switched with PWM signals inputted to an input terminal of the connection circuit. The switching circuitfurther comprises a transistor Minserted at the one end or the other end of the coil Lin cascade-connection.

Switching circuit and envelope signal amplifier

A conductive polycrystalline diamond film having specific resistance of at least 1&times;10,&OHgr;cm and less than,&OHgr;cm, whose film thickness is in the range of at least 0.1 &mgr;m and not more than 500 &mgr;m, is film-formed by vapor-phase synthesis on a surface employed for pressure bonding, a surface opposite to this surface or at least two side surfaces intersecting with these surfaces on a substrate of a bonding tool tip that is applicable for bonding and packaging a semiconductor chip.

Tool tip and bonding tool comprising the tool tip and control method for the bonding tool

An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a &lcub;100&rcub; face, and the diamond protrusion is surrounded by &lcub;111&rcub; faces.

Electron-emitting element, method of making the same, and electronic device

Electron-emitting element

An initial single-crystalline diamond base material is prepared from a flat plate having a major surface and side surfaces consisting of low-index planes. Then, single crystalline diamond is homoepitaxially vapor-deposited on the single-crystalline diamond base material, and a resulting diamond material is cut and polished in a particular manner to provide a successive base material on which single-crystalline diamond is again grown, thereby forming a single-crystalline diamond having a large area. A holder for the single-crystalline diamond base material consists of or is coated with a material hardly forming a compound with carbon. Single crystalline diamond can be stably formed on the surfaces of the base material. Consequently, single-crystalline diamond of high quality having a large area can be stably produced in a shorter time using either plasma CVD or a thermal filament method.

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Osaka, Japan

Takashi Tsuno