Tokyo Electron Limited

Takashi Tsukamoto

Toshihisa Ozu

Naoki Matsumoto

Hiroto Ohtake

Kazuto Takai

Akinori Kitamura

Shota Yoshimura

Ryohei Takeda

Kosuke Kariu

Shinji Higashitsutsumi

Mitsuhiro Tomura

Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.

Plasma processing apparatus and plasma etching apparatus

Provided is a plasma etching method capable of favorably forming masks used when etching a multilayer film. This plasma etching method for etching boron-doped amorphous carbon involves using a plasma of a gas mixture comprising a chlorine gas and an oxygen gas, and setting the temperature of a mounting stage () to 100&#xb0; C. or greater.

Plasma etching method

A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Clgas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer. The Clgas is supplied at a flow rate of about 5% or more to about 10% or less with respect to a flow rate of the HBr gas in the processing gas.

Semiconductor device manufacturing method

Plasma treatment device and plasma treatment method

Growing community of inventors

Amagasaki, Japan

Takashi Tsukamoto