Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Takashi Tsuchiya

Kinya Usuda

Toshiaki Shinozaki

Fumiaki Shigemitsu

Yoshihide Kato

Kei Kirita

Yasuo Matsuoka

Katsuya Okumura

Toru Watanabe

Hiroyuki Hasebe

Masayuki Suzuki

Masami Watase

A photoresist pattern is formed on a quartz substrate. The quartz substrate is dipped into a silicon oxide supersaturated solution of hydrofluoric acid, and a silicon oxide is precipitated out of the supersaturated solution, thereby forming an SiO.sub.2 film on that exposed surface of the quartz substrate which is not covered with the photoresist pattern. After that, the photoresist pattern is ashed by oxygen plasma, and the ashed pattern is removed. The SiO.sub.2 film remaining on the quartz substrate serves as a phase shifter.

Phase shift mask and method of fabricating the same

A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

Method and apparatus for forming resist pattern

This invention is described an automatic developing device. The automatic developing device according to this invention is comprising: a stage on which the substrate to be treated is disposed after application of the resist and the patterning step is complete; a sealed frame capable of movement, that is used to sealingly cover the substrate disposed on this stage; a supply pipe for supplying developer into this sealed frame; a treatment vessel in which installs the stage, the sealing frame and the developer supply pipe; and at least one nozzle which sprays rinsing liquid provider in this treatment vessel.

Automatic developing device

A resist is coated on a photomask and a predetermined pattern is exposed on the resist. The photomask is dipped in a developing solution together with an electrode which exhibits a stable potential in the developing solution, so that a change in current flowing between the photomask and the electrode is detected on the basis of a change in capacitance between the photomask and the developing solution, while developing the pattern formed on the resist. The current abruptly changes (e.g., exhibits its peak) around the time at which the resist is removed and a chromium underlying layer of the photomask is exposed. The time obtained by multiplying the time until the change appears by a predetermined coefficient is regarded as the time corresponding to the end of the developing step.

Pattern developing process and apparatus therefor

A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of the electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

Growing community of inventors

Urawa, Japan

Takashi Tsuchiya