Hitachi, Ltd.

Takashi Toyonaka

Yuichi Ono

Tomonobu Tsuchiya

Shinji Tsuji

Kazunori Shinoda

Misuzu Sagawa

Makoto Haneda

Kiyohisa Hiramoto

A semiconductor laser which does not cause a sudden failure due to an electric surge. A ridge that is formed by a GaAs buffer layer, an n-InGaP cladding layer which is lattice-matched to a GaAs substrate, a strained-quantum well active layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, a p-GaAs waveguide layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, and a p-GaAs cap layer is constructed on the n-GaAs substrate by being buried therein by an n-InGaP current-blocking layer. A device stripe is constructed by a current-injected region in the device and current-non-injected regions near facets.

Semiconductor laser devices

In a polarization dependency type optical isolator comprising wedgelike polarizing prisms 3 and 5 and a Faraday rotator 4, the mode field diameters of an input side fiber 1 and an output side fiber 7 are the same as that of a transmission fiber and an erbium-doped fiber to be connected to them. The shape and other features of each lens are controlled so that the spot size of a parallel ray which is converted from an incident ray by an input side lens 2 is equal to the spot size of a parallel ray which is converted by an output side lens 6 when a reference beam is irradiated from the fiber 7. In a rare-earth-doped fiber optical amplifier using an optical isolator which is configured in a manner similar to this, the connecting portion of the fiber and the optical isolator can be spliced by fusion without increasing the insertion loss of the optical isolator in the forward direction and the connection loss due to a difference in the mode field diameter is reduced. Therefore, the noise figure decreases and the gain increases.

Optical isolator, optical circuit, and rare-earth-doped fiber optical

Growing community of inventors

Hachiouji, Japan

Takashi Toyonaka