Oclaro Japan, Inc.

Lumentum Japan, Inc.

Opnext Japan, Inc.

Takashi Toyonaka

Hiroshi Hamada

Shigehisa Tanaka

Kazuhiro Ito

Yasunobu Matsuoka

Takuma Ban

Sumiko Fujisaki

Hiroyuki Kamiyama

Koki Iemura

Kazuhiro Komatsu

Masataka Yokosawa

A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×10/cm. The high-concentration layers have a carrier concentration of 1×10/cmor more. At least one of the low-concentration layers includes an absorption layer with a band gap that absorbs incident light.

Semiconductor light-receiving element

A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1&#xd7;10/cm. The high-concentration layers have a carrier concentration of 1&#xd7;10/cmor more. At least one of the low-concentration layers includes an absorption layer with a band gap that absorbs incident light.

A photoelectric conversion element includes a substrate including a lens-shaped convex portion and an annular concave portion surrounding the lens-shaped convex portion on a first main surface; a photoelectric conversion layer, positioned on an optical path of light passing through the lens-shaped convex portion, on a second main surface side of the substrate; and a pattern disposed on an outer peripheral side of the annular concave portion on the first main surface and disposed to interpose the lens-shaped convex portion from a first direction and a second direction intersecting the first direction.

Photoelectric conversion element, optical subassembly, and method for manufacturing photoelectric conversion element

Provided are a semiconductor photodiode which achieves a higher response rate in a state in which light receiving sensitivity is maintained. The semiconductor photodiode includes a p-type semiconductor contact layer, an n-type semiconductor contact layer, and a light absorption layer. The light absorption layer includes a first semiconductor absorption layer having a thickness Wd and a p-type second semiconductor absorption layer having a thickness Wp. The first semiconductor absorption layer and the second absorption layer are made of the same composition. The first semiconductor absorption layer is depleted, and the second semiconductor absorption layer maintains an electric charge neutral condition except for a region near an interface with the first semiconductor absorption layer. A relationship between the thickness Wd and the thickness Wp satisfies 0.47&#x2264;Wp/(Wp+Wd)&#x2264;0.9.

Semiconductor photodiode, optical receiver module, optical module, and optical transmission equipment

The optical subassembly includes a photodetector including element terminal groups for light-receiving elements, and an electric signal controller including IC terminal groups, wherein any one of the element terminal group and the IC terminal group has a two-terminal configuration, and the other one has a three-terminal configuration, wherein, in a case where terminal groups at both ends where center positions thereof are disposed on the inner side together and have the two-terminal configuration, the first connection terminals are disposed on the outer side than a second connection terminals in the two-terminal configuration, and in a case where terminal groups at both ends where center positions thereof are on the outer side together and have the two-terminal configuration, a first connection terminal in the two-terminal configuration is disposed on the inner side than the second connection terminal.

Optical subassembly and optical module

Provided is a back illuminated photo detector enabling easy determination of whether or not the radius of a beam spot on a light absorption layer is an appropriate size. The back illuminated photo detector includes: a semiconductor substrate having a first surface for receiving light; a semiconductor layer that is laminated on a second surface and includes a light absorption layer; a passivation film so as to expose a contact portion that is part of an upper surface of the semiconductor layer; and an electrode that is in contact with the semiconductor layer in the contact portion, and has a reflectance lower than that of the passivation film. The contact portion includes a center portion located on an optical axis, and an area of the center portion is smaller than a design cross-sectional area of a beam spot.

Back illuminated photo detector and optical receiver module having a center portion of an exposed contact portion located on an optical axis of light

An optical receiver module capable of increasing the range in which the error in distance between a collecting lens and a light receiving section is allowed is provided. In the optical receiver module according to the invention, the optical receiver includes a semiconductor substrate to which the light from the collecting lens is input, and through which the light passes, and a light receiving section disposed on a side (a reverse side) of the semiconductor substrate, the side being further from the collecting lens, and adapted to receive the light transmitted through the semiconductor substrate, and then convert the light into an electrical signal. On a side (an obverse side) of the semiconductor substrate, the side being nearer to the collecting lens, there is formed a lens surface adapted to converge light from the collecting lens toward the light receiving section.

Optical receiver module

Provided is a receiver module, including: a semiconductor light receiving element including an electrode; and a sub-mount including: an electrical wiring joined to the electrode with solder; and a trap region arranged around a joining surface of the electrical wiring, the trap region retaining solder by solder wetting.

Receiver module and device

A light-receiving device array includes a photodiode array that is provided with plural light-receiving sections each of which includes a first conductivity type electrode and a second conductivity type electrode, and a carrier, wherein the carrier includes plural pair of electric lines each of which is formed from a first electric line connected to the first conductivity type electrode of each light-receiving section, and a second electric line connected to the second conductivity type electrode of the light-receiving section, a first ground electrode that extends between one pair of electric lines of the plural pair of electric lines and a pair of electric lines adjacent to the one pair of electric lines, and a second ground electrode that is formed on a part of the rear surface and is electrically connected to the first ground electrode.

Light-receiving device array, optical receiver module, and optical transceiver

Provided is a backside illuminated semiconductor light-receiving device enhancing a frequency characteristic without deteriorating assembling operability. The light-receiving device includes a rectangular substrate; a light receiving mesa portion formed on a center portion of one side on a front surface of the substrate and includes a PN junction portion; a P-type electrode formed on the light receiving mesa portion and conductive with one side of the PN junction portion; an N-type electrode mesa portion formed on one corner portion of the one side; an N-type electrode pulled out to the N-type electrode mesa portion and conductive with the other side of the PN junction portion; a P-type electrode mesa portion and a dummy electrode mesa portion formed in a region including three other corner portions; and a dummy electrode formed on the dummy electrode mesa portion.

Backside illuminated semiconductor light-receiving device, optical receiver module, and optical transceiver

A semiconductor optical receiver device is provided, which a mesa comprising a plurality of semiconductor crystal layers formed on a semiconductor substrate including a pn junction having a first conductive semiconductor crystal layer and a second conductive semiconductor crystal layer and including a first contact layer on the semiconductor substrate, a plurality of electrodes to apply electric field to the pn junction are coupled on the semiconductor substrate, a second contact layer is formed on a buried layer in which the mesa is buried, and the electric field is applied to the pn junction through the first and second contact layers.

Semiconductor optical receiver device, optical receiver module, and method for manufacturing semiconductor optical receiver device

Reducing a dark current in a semiconductor photodetector provided with a second mesa including an regrown layer around a first mesa. An n-type buffer layer, a n-type multiplication layer, a p-type field control layer, a p-type absorption layer, a cap layer made of p-type InAlAs crystal, and a p-type contact layer are made to grow on a main surface of a n-type substrate. Thereafter the p-type contact layer, the p-type cap layer, the p-type absorption layer and the p-type field control layer are patterned to form a first mesa. Next, after making a p-type regrown layer selectively grow around the first mesa or by forming a groove in the regrow layer located in a vicinity of the p-type cap type during a step of the selective growth, the p-type cap layer containing Al and the regrow layer are separated owing to the groove such that no current path is formed between both layers.

Growing community of inventors

Kanagawa, Japan

Takashi Toyonaka