Renesas Electronics Corporation

Nec Electronics Corporation

Takashi Tonegawa

Tatsuya Usami

Takashi Moriyama

Keiji Sakamoto

Hiroshi Inagawa

Koichi Ohto

Yasuaki Tsuchiya

Noboru Morita

Yoichi Sasaki

Tomoko Inoue

Koji Arita

Ryohei Kitao

Sadayuki Ohnishi

Tomotake Morita

Norihiko Matsuzaka

To improve reliability of a semiconductor device. There are provided the semiconductor device and a method of manufacturing the same, the semiconductor including a pad electrode that is formed over a semiconductor substrate and includes a first conductive film and a second conductive film formed over the first conductive film, and a plating film that is formed over the second conductive film and used to be coupled to an external connection terminal (TR). The first conductive film and the second conductive film contains mainly aluminum. The crystal surface on the surface of the first conductive film is different from the crystal surface on the surface of the second conductive film.

Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device includes forming an interlayer insulating film over a main surface of a semiconductor substrate, forming a first conductive film pattern for a first pad and a second conductive film pattern for a second pad over the interlayer insulating film, forming an insulating film over the interlayer insulating film such that the insulating film covers the first and the second conductive film patterns, forming a first opening portion for the first pad, the first opening portion exposing a portion of the first conductive film pattern, and a second opening portion for the second pad, the second opening portion exposing a portion of the second conductive film pattern, in the insulating film, and forming a first plated layer by plating over the portion of the first conductive film pattern exposed in the first opening portion, and a second plated layer.

Reliability of a semiconductor device having a plated layer formed on an electrode pad is improved. The method of manufacturing the semiconductor device includes a step for forming the plated layer on the electrode pad by moving the semiconductor wafer at a second speed, in a nickel-plating solution, after moving the semiconductor wafer at a first speed higher than the second speed. After moving the semiconductor wafer at the first speed, the semiconductor wafer is moved at the second speed without bringing the semiconductor wafer out from the nickel-plating solution.

A semiconductor device and a method for manufacturing the semiconductor device which ensure improved reliability, permit further miniaturization, and suppress the increase in manufacturing cost. The semiconductor device includes: a pad electrode formed in the uppermost wiring layer of a multilayer wiring layer formed over a semiconductor substrate; a surface protective film formed in a manner to cover the pad electrode; an opening made in the surface protective film in a manner to expose the pad electrode partially; and a conductive layer formed over the pad electrode exposed at the bottom of the opening. The thickness of the conductive layer formed over the pad electrode is smaller than the thickness of the surface protective film formed over the pad electrode.

Semiconductor device with over pad metal electrode and method for manufacturing the same

An object is to prevent a short failure in magnetic tunnel junction and thereby suppress a semiconductor device having a magnetic memory cell from having deteriorated reliability. First, a data reference layer and a cap layer are patterned. After formation of an oxygen-free first insulating film on their side walls, a base layer, a data recording layer, and a tunnel barrier layer are patterned. During patterning of the base layer, data recording layer, and tunnel barrier layer, adhesion of a metal substance of the data reference layer and the cap layer to the side wall of the tunnel barrier layer can be prevented because the data reference layer and the cap layer are covered by the first insulating film.

Semiconductor device and method of manufacturing same

Properties of a semiconductor device are improved. A semiconductor device is configured so as to have a protective film provided over an interconnection and having an opening, and a plating film provided in the opening. A slit is provided in a side face of the opening, and the plating film is also disposed in the slit. Thus, the slit is provided in the side face of the opening, and the plating film is also grown in the slit. This results in a long penetration path of a plating solution during subsequent formation of the plating film. Hence, a corroded portion is less likely to be formed in the interconnection (pad region). Even if the corroded portion is formed, a portion of the slit is corroded prior to the interconnection (pad region) at a sacrifice, making it possible to suppress expansion of the corroded portion into the interconnection (pad region).

Semiconductor device and method of manufacturing semiconductor device

The method of manufacturing a semiconductor device comprises forming a metal film over silicon regions and insulating films; performing a first heat treatment under an oxygen atmosphere containing oxygen as a main ingredient, to form a first silicide film in the silicon region by reacting the metal film and the silicon region, and to simultaneously form a metal oxide by oxidizing the entire surface of the metal film from the surface side thereof; and selectively removing the metal oxide and the unreacted metal film using a chemical.

Method of manufacturing semiconductor device

A manufacturing method of a semiconductor device including a step of forming a via hole in an insulation layer including an organic low dielectric film, such as MSQ, SiC, and SiCN, and then embedding a wiring material in the via hole through a barrier metal. According to this method, a plasma treatment is performed after the via hole is formed and before the barrier metal is deposited, using a He/Hgas capable of replacing groups (methyl groups) made of organic constituents and covering the surface of the exposed organic low dielectric film (MSQ) with hydrogen, or a He gas capable decomposing the groups (methyl groups) without removing organic low dielectric molecules. As a result, the surface of the low dielectric film (MSQ) is reformed to be hydrophilic and adhesion to the barrier metal is hence improved, thereby making it possible to prevent the occurrence of separation of the barrier metal and scratches.

Manufacturing method of semiconductor device

In a method of forming a metal wiring line, a first insulating film is formed directly or indirectly on a semiconductor substrate. A second insulating film is formed on the first insulating film. A wiring line groove is formed to pass through the second insulating film to an inside of the first insulating film. A conductive film is formed to fill the wiring line groove and to cover the second insulating film. The conductive film and the second insulating film are removed by a first CMP polishing process, using the first insulating film as a stopper film, until the first insulating film is exposed.

Growing community of inventors

Ibaraki, Japan

Takashi Tonegawa