Hitachi, Ltd.

Takashi Tokuyama

Makoto Ohkura

Masanobu Miyao

Masao Tamura

Yasuo Wada

Nobuyoshi Natsuaki

Terunori Warabisako

Naotsugu Yoshihiro

Iwao Takemoto

Shinichiro Kimura

Isao Yoshida

Osamu Minato

Hideo Sunami

Shinya Ohba

Masatada Horiuchi

Takahiro Okabe

Ryo Haruta

Tadashi Saitoh

Kiichiro Mukai

Katsumi Tokiguchi

Hiroshi Ishihara

Takao Miyazaki

Haruo Itoh

Yasushiro Nishioka

Hirotsugu Kozuka

Hiroo Usui

Tamura Hiroshi

Tamura Masao

Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate. Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained. The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.

Method of making three dimensional semiconductor devices in selectively

At least one layer of insulator film and single-crystal film are alternately stacked and deposited on a surface of a semiconductor substrate, and an impurity-doped region formed in each semiconductor film is used as a gate, source or drain of a MOS transistor. Thus, a three-dimensional semiconductor device is constructed in which MOS transistors are arranged, not only in the direction of the semiconductor substrate surface, but also in a direction perpendicular thereto.

Three-dimensional semiconductor device with thin film monocrystalline

An amorphous or polycrystalline film which continuously covers the exposed surface of a single crystal substrate and an insulating film, is deposited in ultra-high vacuum and then heat-treated. The film is subjected to solid phase epitaxial growth at a temperature far lower than in prior-art methods, whereby a single crystal film is formed.

Method of producing single crystal film utilizing a two-step heat

A non-mass-analyzed ion implantation process wherein two or more species of ions of the same polarity having greatly different ion masses are generated from a compound source material, the ions are accelerated under the application of an electric field, and the accelerated ions are scanned under the application of a magnetic field so as to be implanted into a target at a distribution profile which varies with the species of ions. An ion implantation apparatus can be simplified. A large ion beam current with a large spot size can be used and ions can be implanted to the target at a large dose within a short time. Especially, the non-mass-analyzed ion implantation is advantageously utilized for production of solar batteries.

Non-mass-analyzed ion implantation

The whole surface of a polycrystalline or amorphous semiconductor film deposited so as to continuously cover the surface of a single-crystal substrate and an insulating film is irradiated with a laser beam or electron beam, thereby to selectively melt only those parts of the polycrystalline or amorphous semiconductor film which overlie the insulating film. Thus, a single-crystal semiconductor film is formed only the insular insulating film formed on the single-crystal substrate.

Method of manufacturing single-crystal film

A polycrystalline silicon film is implanted with an impurity in large amounts and is heated to be annealed, whereupon it is irradiated with a laser beam to be annealed. Thus, a polycrystalline silicon film of very low resistivity consisting of a second layer whose activated impurity concentration is equal to or below a solid solubility and a first layer whose activated impurity concentration is above the solid solubility is formed.

Stacked polycrystalline silicon film of high and low conductivity layers

A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistance. Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.

Method of producing a semiconductor device

After desired impurities are diffused into a semiconductor substrate through a masking layer of SiO.sub.2 formed thereupon so as to form a semiconductor device, the masking layer is completely removed therefrom and thereafter more than two thin layers of different insulating materials are deposited upon the cleaned surface of the semiconductor device thus providing a method of forming a semiconductor device with an improved passivation film thereon. Said insulating materials are selected from the group consisting of silicon dioxide, a silicon nitride, alumina, boro-silicate glass, phospho-silicate glass, alumino-silicate glass, alumino-phospho-silicate glass and alumino-boro-silicate glass, and the thickness of each thin layer is in the range of 300 to 1500 angstroms and the first layer is silicon dioxide.

Semiconductor device having controlled surface charges by passivation

Growing community of inventors

Higashikurume, Japan

Takashi Tokuyama