Tokyo Electron Limited

Sony Corporation

Sony Semiconductor Solutions Corporation

Tokyo Electron Kyushu Limited

Takashi Terada

Masaru Honda

Yuji Mimura

Hiroshi Maeda

Ryoichi Sakamoto

Yutaka Yamasaki

Keiichi Tanaka

Osamu Miyahara

Yasuhiro Takaki

Shinya Wakamizu

Tomohiro Yamazaki

Hiroshi Tanaka

Keisuke Hatano

Kentaro Akiyama

Shigenori Kitahara

Kimio Motoda

Satoshi Nakashima

Takayuki Ishii

Yoshitaka Otsuka

Akira Fukutomi

Yoshiteru Fukuda

Munehisa Kodama

Norio Wada

Yasuhiro Chouno

Shigeto Tsuruta

Goro Furutani

Atsushi Yamashita

Tatsuya Kitayama

Kazutaka Noda

Takuma Matsuno

A surface modifying apparatus is configured to modify a bonding surface of a substrate to be bonded to another substrate by plasma of a processing gas. The surface modifying apparatus includes a processing vessel; a measuring unit; and a controller. The processing vessel is configured to accommodate the substrate therein. The measuring unit is configured to measure a value indicating an amount of moisture in the processing vessel. The controller is configured to determine whether or not bonding strength between the substrate and the another substrate, when it is assumed that the substrate modified in the processing vessel is bonded to the another substrate, is good based on the value indicating the amount of moisture in the processing vessel measured by the measuring unit.

Surface modifying apparatus and bonding strength determination method

A bonding system includes a surface modifying apparatus and a bonding apparatus. The surface modifying apparatus is configured to modify a bonding surface of a substrate to be bonded to another substrate with plasma of a processing gas. The bonding apparatus is configured to bond two substrates modified by the surface modifying apparatus by an intermolecular force. The surface modifying apparatus includes: a processing chamber configured to accommodate therein the substrate; a processing gas supply configured to supply a processing gas containing moisture into the processing chamber; and a plasma forming unit configured to form the plasma of the processing gas containing the moisture.

Bonding system and surface modification method

A bonding apparatus configured to bond a first substrate and a second substrate includes: a first holder configured to hold the first substrate; a second holder disposed to face the first holder in a vertical direction, and configured to hold the second substrate; a processing vessel accommodating the first holder and the second holder therein; and a horizontal position adjuster provided outside the processing vessel and connected to the first holder via a support supporting the first holder, the horizontal position adjuster being configured to adjust a horizontal position of the first holder.

Bonding apparatus, bonding system, and bonding method

A separating method includes holding a combined substrate and separating a first substrate. In the holding of the combined substrate, the combined substrate in which the first substrate and a second substrate are bonded is held. In the separating of the first substrate, the first substrate is separated from the combined substrate, starting from a side surface of the combined substrate. The separating of the first substrate includes brining a fluid containing water into contact with the side surface.

Separating method, separating apparatus, and separating system

An imaging element of the present disclosure includes: a photoelectric conversion sectionprovided in a substrate; a polarizerformed over the photoelectric conversion section, with a single ground insulating layerinterposed therebetween; and a light shielding sectionA formed on an upper side of a peripheral region' around the photoelectric conversion section

Imaging element and solid-state imaging device

A substrate processing apparatusincludes a first holding unitconfigured to hold a processing target substrate W; a second holding unitdisposed to face the first holding unitand configured to hold a support substrate S; and an ultraviolet irradiation unitconfigured to irradiate an ultraviolet ray to an adhesive G provided between the processing target substrate W and the support substrate S. Each of the support substrate S and the second holding unitis made of an ultraviolet transmissive material. An electrodeconfigured to electrostatically attract the support substrate S is provided within the second holding unit. A diffusion layerconfigured to diffuse a transmission direction of the ultraviolet ray is provided at a position closer to the support substrate S between the support substrate S and the electrodewithin the second holding unit

Substrate processing apparatus and manufacturing method of substrate holding unit

A coating apparatus includes a nozzle, a moving mechanism, a pressure adjusting unit and a pressure control unit. The nozzle is provided with a storage chamber and a slit-like flow path, and configured to discharge the coating liquid from a discharge port formed at a front end of the flow path. The moving mechanism moves the nozzle and a substrate relatively to each other along the surface of the substrate. The pressure adjusting unit adjusts the pressure inside the storage chamber. The pressure control unit controls the pressure adjusting unit so as to adjust pressure inside the storage chamber. The pressure control unit controls the pressure adjusting unit such that the inside of the storage chamber becomes a negative pressure, and fills the coating liquid inside the storage chamber while slowly decreasing the negative pressure inside the storage chamber.

Coating apparatus and method for filling coating liquid

Provided is a dye adsorption unit including a processing tank of which the upper surface is opened, in order to perform a batch dye adsorption process for a predetermined number of substrates. The dye adsorption unit further includes, as a moving system around the processing tank, a boat capable of going in and out of the processing tank from the upper opening, a boat transport unit that serves for the boat to go in and out of the processing tank, and a top cover for detachably closing the upper opening. Further, the dye adsorption unit includes a dye solution supply unit for supplying the dye solution into the processing tank, and a flow control unit for controlling the flow of the dye solution in the processing tank during the dye adsorption processing.

Dye adsorption apparatus and dye adsorption method

A non-transitory storage medium stores software for performing a rinsing process on a substrate, after a developing process is performed on a light-exposed pattern disposed thereon. The sequence includes throwing off a developing solution from the substrate after development; supplying a water-based cleaning liquid onto the substrate; supplying a surfactant-containing rinsing liquid onto the substrate to replace liquid remaining on the substrate with the surfactant-containing rinsing liquid; and rotating the substrate to expand and throw off the surfactant-containing rinsing liquid on the substrate.

Non-transitory storage medium for rinsing or developing sequence

A solid-state imaging device of the type having photoelectric conversion elements formed in a matrix pattern on a semiconductor substrate, vertical transfer elements each of which reads signal charges from the photoelectric conversion elements arranged in the column direction and transfers the signal charges in the vertical direction, and a horizontal transfer element which transfers in the horizontal direction the signal charges sent from each of the vertical transfer elements, the horizontal transfer element includes: a charge transfer channel; a first transfer electrode; a second transfer electrode; and an interelectrode insulating film; with the first transfer electrode and the second transfer electrode being at the same potential.

Solid-state imaging device and its production method

A rinsing method for performing a rinsing process on a substrate, after a developing process is performed on a light-exposed pattern disposed thereon, includes a step (STEP) of throwing off a developing solution from the substrate after development; a step (STEP) of supplying a water-based cleaning liquid onto the substrate; a step (STEP) of supplying a surfactant-containing rinsing liquid onto the substrate to replace liquid remaining on the substrate with the surfactant-containing rinsing liquid; and a step (STEP) of rotating the substrate to expand and throw off the surfactant-containing rinsing liquid on the substrate. STEPis arranged to supply the surfactant-containing rinsing liquid for a supply time of 5 seconds or less. STEPis arranged to include a first period with a lower rotation number and a second period with a higher rotation number, and to set the rotation number of the substrate in the first period to be more than 300 rpm and less than 1,000 rpm.

Rinse treatment method and development process method

In a pneumatically driven liquid supply apparatus comprising a circulation pump,or constant-volume pump,for supplying a washing liquid or chemical to a washing tank,for semiconductor wafers used during the fabrication of semiconductor devices; an electromagnetic switching valve,and a pressure regulator,that configure an air-pressure adjustment means,are connected to an air source,; and air supply pipelines,, and,are each connected to the air-pressure adjustment means,, the circulation pump,and the constant-volume pump,. A leakage sensor,is interposed within each of the air supply pipelines,, and,between the air-pressure adjustment means,and the circulation pump,or constant-volume pump,, so that any liquid that flows backward through the circulation pump,or the constant-volume pump,and into the air supply pipeline,, or,is detected by the leakage sensor,. This makes it possible to prevent damage or halting of the functions of the air-pressure adjustment means due to liquid flowing into the air supply pipelines via one of the pumps.

Pneumatically driven liquid supply apparatus

A chemical cleaning section of a semiconductor wafer cleaning system has a processing vessel. Two cleaning liquid supplying ports are formed in a bottom portion of the vessel. A holder for holding a plurality of wafers at intervals is arranged in the vessel. A rectifying plate is arranged between the holder and the supplying ports and a diffusion plate is arranged between the rectifying plate and the supplying ports. Bubble storage members are formed on a lower surface of the rectifying plate, so as to be located just above both side edges of the diffusion plate extending in a direction in which the wafers are aligned. The bubble storages are connected to the outside of the vessel through exhaust holes and exhaust pipes. Bubbles contained in a cleaning liquid supplied through the supplying ports are discharged from the bubble storages through the exhaust pipes to the outside of the vessel. As a result, the wafers are not influenced by the bubbles.

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Kumamoto, Japan

Takashi Terada