Renesas Electronics Corporation

Renesas Technology Corp.

Freund Corporation

Keihin Thermal Technology Corporation

Showa Denko K.k.

Mitsubishi Denki Kabushiki Kaisha

Fujitsu Takamisawa Component Limited

Takashi Terada

Motoi Ashida

Shigemi Isobe

Toshiaki Iwamatsu

Hirofumi Shinohara

Ryuta Tsuchiya

Kiyoshi Hayashi

Yasutoyo Fusejima

Shinya Hori

Kozo Ishikawa

Youhei Ikawa

Takashi Tamura

Ryoichi Hoshino

Hirofumi Horiuchi

Noboru Ogasawara

Tomohiro Hosokawa

Yasuichi Masuda

Norikazu Saitou

Futoshi Watanabe

Hiroshi Otsuki

Takuya Nakamura

Yoshiyuki Ishigaki

Hitoshi Ohkubo

Kazuo Aita

Yukio Maki

Junichi Maruyama

Kazutoshi Hayashi

Tsuyoshi Koga

Hirotsune Yasumi

Yasuhiro Fujii

Kazuyuki Takahashi

Makoto Dei

Naoko Mizuno

Shouji Fuchigami

An airflow drying device includes a granulated substance introduction portion, a dry process portion, and a product ejection portion. The granulated substance introduction portion includes a granulated substance inlet into which granulated substances are to be put, and a hot air inlet into which hot air is to be supplied. The dry process portion includes a loop pipe. The loop pipe is positioned laterally in a horizontal direction, and is able to dry granulated substances. The product ejection portion includes a cyclone collector where the granulated substances are collected after being dried through the loop pipe.

Drying device and continuous granule production system

A deviation handling apparatus for a continuous production system of granulated products includes a storage section for temporarily storing the products, an inspection section for inspecting selected physical properties of the products, a moving route switching section for switching the moving route of the products according to the results of the inspection and a discharge path for discharging the products judged as not meeting the specifications. The storage section has two shutoff valves and a storage chamber formed therebetween. The switching section has a switching valve having a normal position and a deviation position for causing a conveyance route to communicate with the discharge path. The deviation handling apparatus closes the shutoff valves to store products in the storage chamber and inspect properties of the products. When off-specification products are detected, the switching valve is switched to the deviation position and the products are discharged.

Deviation handling apparatus and deviation handling method

A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad electrode, and a coupling part. The mark-like appearance part includes an insulation film covering the entire side surface of a trench part formed in a semiconductor substrate. The pad electrode is arranged at a position overlapping the mark-like appearance part. The coupling part couples the pad electrode and mark-like appearance part. At least a part of the pad electrode on the other main surface side of the substrate is exposed through an opening reaching the pad electrode from the other main surface side of the substrate. The mark-like appearance part and coupling part are arranged to at least partially surround the outer circumference of the opening in plan view.

Semiconductor device and a manufacturing method thereof

A clad material includes a core material, a first skin material covering one side of the core material, and a second skin material covering the other side of the core material. The clad material is brazed in a state in which the first and second skin materials overlap each other. The core material is made of an Al alloy containing Mn (0.6 to 1.5 mass %), Ti (0.05 to 0.25 mass %), Cu (less than 0.05 mass %), Zn (less than 0.05 mass %), Fe (0.2 mass % or less), and Si (0.45 mass % or less) (balance: Al and unavoidable impurities). The first skin material is made of an Al alloy containing Si (6.8 to 11.0 mass %) and Zn (0.05 mass % or less) (balance: Al and unavoidable impurities). The second skin material is made of an Al alloy containing Si (4.0 to 6.0 mass %) and Cu (0.5 to 1.0 mass %) (balance: Al and unavoidable impurities).

Clad material, method of manufacturing brazed pipe, and brazed pipe

Heat exchange tubes of a heat exchanger are formed of an alloy containing Mn (0.2 to 0.3 mass %), Cu (0.1 mass % or less), and Fe (0.2 mass % or less), the balance being Al and unavoidable impurities. A Zn diffused layer is formed in an outer surface layer portion of the peripheral wall of each heat exchange tube. T&#x2266;200, 0.57&#x2266;A&#x2266;1.5, D/T&#x2266;0.55, and 0.0055&#x2266;A/D&#x2266;0.025 are satisfied, where T is the thickness [&#x3bc;m] of the peripheral wall of the heat exchange tube, A is the Zn concentration [mass %] at the outermost surface of the outer surface layer portion, and D is the maximum depth [&#x3bc;m] of the Zn diffused layer. The spontaneous potential of the Zn diffused layer is lower than that of a portion of the peripheral wall located on the inner side of the Zn diffused layer.

Heat exchanger

The anticorrosion treatment method of the invention is carried out on the outer surface of an aluminum extruded heat exchange tube which is formed of an Al alloy containing Mn 0.2 to 0.3 mass %, Cu 0.05 mass % or less, and Fe 0.2 mass % or less, and which has a wall thickness of 200 &#x3bc;m or less. The anticorrosion treatment method includes applying a specific dispersion of a flux powder and a Zn powder onto the outer surface of the heat exchange tube, and vaporizing a liquid component of the dispersion, to thereby deposit the Zn powder and the flux powder on the outer surface of the heat exchange tube, such that the Zn powder deposition amount, the flux powder deposition amount, and the ratio of the flux powder deposition amount to the Zn powder deposition amount are adjusted to specific values.

Method for anticorrosion treatment of outer surface of heat exchange tube made of aluminum extrusion and method for producing heat exchanger

An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable.

Semiconductor device and method for manufacturing the same

In a pan coating apparatus including a rotary drum which rotates about a horizontal rotation axis, an air supply chamber having a larger sectional area than that of an opening portion is arranged on a front stage with respect to the front-surface opening portion of the rotary drum. The air supply chamber is formed in a chamber door attached to a front of a casing, and has one end side communicating to the opening portion and another end side connected to an air supply duct via an air supply hole. The air flowing into the air supply chamber from the air supply duct is reduced in flow rate in the air supply chamber and supplied from the opening portion into the rotary drum with the air flow thereof in a stable state.

Pan coating apparatus

A spray gun () is attached to a multi-function unit () movable in a horizontal direction and a perpendicular direction. The spray gun () is mounted to a support holder (), and the support holder () is connected to a support arm () of the multi-function unit (). The support arm () is attached to a unit cover () which is openable/closable with respect to a casing (). The support holder () and the support arm () can hide and house a liquid hose and an air hose therein so that the hoses and the like are arranged in an apparatus in such a state as to be completely free from being exposed. An installation position of the spray gun () can be finely adjusted by the multi-function unit () during a coating process, thereby enabling a control for keeping constant distances between tablet surfaces and the spray gun ().

A semiconductor device including plural CMOS transistors with first and second transistors sharing a common first gate electrode and third and fourth transistors sharing a common second gate electrode that is adjacent and parallel to the first gate electrode. The first and third transistors share a common n-type channel MOS region and the second and fourth transistors share a common p-type channel MOS region. The semiconductor device has a wire connecting the n-type channel MOS region and the p-type channel MOS region. The wire has a width greater than a distance between the first and second adjacent gate electrodes, and a portion of the wire is disposed right above a portion of at least one of the first and second gate electrodes with an insulating film interposed therebetween.

Semiconductor device and method of manufacturing the same

The evaporator includes the upper side and lower header membersanddisposed at the upper and lower end of the core. One end of each tubeconstituting the upstream-side tube group Pis connected to the inlet-side tank, while the other end to the lower header member. One end of each tubeconstituting the downstream-side tube group Pis connected to the outlet-side tank, while the other end to the lower header member. The refrigerant flowed into the inlet-side tankis introduced into the outlet-side tankby passing through the upstream-side tube group P, the lower header memberand the downstream-side tube group P, so that the refrigerant evaporates by exchanging heat with ambient air A. Accordingly, it improves the heat exchange performance and decreases the thickness.

Evaporator, manufacturing method of the same, header for evaporator and refrigeration system

Growing community of inventors

Tokyo, Japan

Takashi Terada