Sony Corporation

Sony Group Corporation

Sony Semiconductor Solutions Corporation

Takashi Tange

Masaru Kuramoto

Tatsushi Hamaguchi

Masao Ikeda

Hiroshi Yoshida

Hui Calvin Yang

Katsunori Yanashima

Shiro Uchida

Takao Miyajima

Takaaki Ami

Yuki Maeda

Shigetaka Tomiya

Michinori Shiomi

Akira Ohmae

Kunihiko Tasai

Kota Tokuda

Masayuki Arimochi

Shulong Lu

Atsushi Yasuda

Xinhe Zheng

A nitride semiconductor laser device of one embodiment of the present disclosure includes a single-crystal substrate, a base layer, a sheet-shaped structure, a light emitting layer, and a resonator mirror. The single-crystal substrate extends in one direction. The base layer is provided on the single-crystal substrate and includes a nitride semiconductor. The sheet-shaped structure is provided on the base layer to stand in a direction perpendicular to the base layer. The sheet-shaped structure has an area of a side surface that is greater than an area of an upper surface. The side surface extends in a longitudinal direction of the single-crystal substrate. The sheet-shaped structure includes a nitride semiconductor. The light emitting layer is provided at least on the side surface of the sheet-shaped structure. The light emitting layer includes a nitride semiconductor. The resonator mirror is provided by a pair of end surfaces of the sheet-shaped structure that oppose each other in the longitudinal direction.

Nitride semiconductor laser device and method of manufacturing nitride semiconductor laser device

A semiconductor optical device has a multilayer structureincluding a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. A second electrodeis formed on the second compound semiconductor layerthrough a contact layer. The contact layerhas a thickness of four or less atomic layers. When an interface between the contact layerand the second compound semiconductor layeris an xy-plane, a lattice constant along an x-axis of crystals constituting an interface layerA which is a part of the second compound semiconductor layer in contact with the contact layeris x, a lattice constant along a z-axis is z, a length along an x-axis in one unit of crystals constituting the contact layeris x', and a length along the z-axis is z&#x2032;, (z&#x2032;/x&#x2032;)&#x3e;(z/x) is satisfied.

Semiconductor optical device

A multi-junction solar cell that is lattice-matched with a base, and that includes a sub-cell having a desirable band gap is provided. A plurality of sub-cells are laminated, each including first and second compound semiconductor layers. At least one predetermined sub-cell is configured of first layers and a second layer. In each of the first layers, a 1-A layer and a 1-B layer are laminated. In the second layer, a 2-A layer and a 2-B layer are laminated. A composition A of the 1-A layer and the 2-A layer is determined based on a value of a band gap of the predetermined sub-cell. A composition B of the 1-B layer and the 2-B layer is determined based on a difference between a base lattice constant of the base and a lattice constant of the composition A. Thicknesses of 1-B layer and 2-B layer are determined based on difference between base lattice constant and a lattice constant of composition B, and on thickness of the 1-A layer and thickness of 2-A layer.

Multi-junction solar cell, photoelectric conversion device, and compound-semiconductor-layer lamination structure

A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.

Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V group compound semiconductor, light source cell unit, light-emitting diode

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Kanagawa, Japan

Takashi Tange