Hitachi, Ltd.

Hitachi-high-technologies Corporation

Hitachi High-tech Analysis Corporation

Takashi Takahama

Naoki Tega

Digh Hisamoto

Satoru Akiyama

Hiroki Kawada

Yoshitaka Sasago

Osamu Komuro

Ryuta Tsuchiya

Daisuke Ryuzaki

Naoshi Itabashi

Osamu Inoue

Hideo Arimoto

Koji Fujisaki

Keisuke Kobayashi

Miyako Matsui

Kazuki Tani

Takahiro Kawasaki

Katsumi Setoguchi

Kazuyuki Hozawa

Tadao Morimoto

An semiconductor detector includes an n-type semiconductor substrate, a detection electrode formed on a first surface of the semiconductor substrate, a plurality of drift electrodes formed to surround the detection electrode and applied with a voltage causing a potential gradient in which a potential changes toward the detection electrode, a radiation incidence window provided on a second surface of the semiconductor substrate, a P-type semiconductor region formed by adding boron to a surface side on the second surface of the semiconductor substrate through the radiation incidence window, and a depleting electrode causing a reverse bias between the P-type semiconductor region formed on the second surface and an N-type semiconductor region formed in the semiconductor substrate. F is added to the P-type semiconductor region, and a region with the highest concentration of F is located deeper than a region with the highest concentration of B.

Semiconductor detector and method of manufacturing same

In an optical modulatorof an embodiment, an optical waveguide coreis configured from an ntype semiconductor region, a gate insulating filmon the ntype semiconductor region, and a ptype semiconductor regionon the gate insulating film. Further, a width Wof the ntype semiconductor regionand a width Wof the ptype semiconductor regionare equally formed and are layered without being shifted. Therefore, an optical modulator having stable optical characteristics can be provided.

Optical modulator and method for manufacturing same

Disclosed herein is a technique for realizing a high-performance and high-reliability silicon carbide semiconductor device. A trenched MISFET with a trench formed into the drift through a p-type body layerincludes an n-type resistance relaxation layercovering the bottom portion of the trench, and a p-type field relaxation layer. The p-type field relaxation layeris separated from the trench bottom portion via the resistance relaxation layer, and is wider than the resistance relaxation layer. This achieves a low ON resistance, high reliability, and high voltage resistance at the same time. By forming the field relaxation layer beneath the trench, feedback capacitance can be controlled to achieve a high switching rate and high reliability.

Silicon carbide semiconductor device and method for producing same

An object of the present invention is to provide an image processing apparatus that quickly and precisely measures or evaluates a distortion in a field of view and a charged particle beam apparatus. To attain the object, an image processing apparatus or the like is proposed which acquires a first image of a first area of an imaging target and a second image of a second area that is located at a different position than the first area and partially overlaps with the first area and determines the distance between a measurement point in the second image and a second part of the second image that corresponds to a particular area for a plurality of sites in the overlapping area of the first image and the second image.

Image processing device, charged particle beam device, charged particle beam device adjustment sample, and manufacturing method thereof

In order to provide a high-performance and reliable silicon carbide semiconductor device, in a silicon carbide semiconductor device including an n-type SiC epitaxial substrate, a p-type body layer, a p-type body layer potential fixing region and a nitrogen-introduced n-type first source region formed in the p-type body layer, an n-type second source region to which phosphorus which has a solid-solubility limit higher than that of nitrogen and is easily diffused is introduced is formed inside the nitrogen-introduced n-type first source region so as to be separated from both of the p-type body layer and the p-type body layer potential fixing region.

Silicon carbide semiconductor device and manufacturing method of the same

The present invention provides a technique capable of realizing a silicon carbide semiconductor device having high performance and high reliability. By constituting a channel region by an n-type, intrinsic, or p-type channel region and a p-type channel region, a high channel mobility and a high threshold voltage are realized. Further, by constituting a source region by an n-type source region and an n-type source region, and forming the n-type source region between the p-type channel region and the n-type source region, an electric field in the p-type channel region is relaxed to suppress deterioration of a gate insulating film, and also by electrically connecting a source wiring electrode to the n-type source region, a contact resistance is decreased.

Silicon carbide semiconductor device and method for producing the same

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Tokyo, Japan

Takashi Takahama