Kabushiki Kaisha Tokai Rika Denki Seisakusho

Toyota Jidosha Kabushiki Kaisha

Toyota Boshoku Kabushiki Kaisha

Kabushiki Kaisha Toyota Chuo Kenkyusho

Uht Corporation

Denso Corporation

Kabushiki Kaisha Toyota Jidoshokki

Pyles Japan Co., Ltd.

Takashi Suzuki

Narumasa Soejima

Kengo Shima

Satoshi Honda

Yosuke Kanie

Hitoshi Iwata

Akira Kuroyanagi

Jun Saito

Shoji Miura

Mikimasa Suzuki

Katsuya Kogiso

Masakata Kanbe

Tsuyoshi Nishiwaki

Noriyuki Iwamori

Katsuhiro Minami

Masahiro Taniguchi

Masayasu Ishiko

Masahiro Tasaka

Masakazu Kakimoto

Yukihiro Hisanaga

Kazuya Adachi

Makoto Inoue

Rikiya Makino

Hiromi Takase

Hidehiro Nakagawa

Shouji Suzuki

Takatoshi Urashi

Fumiaki Matsuura

Sachiko Tanaka

Hirokazu Saito

A protection device includes a semiconductor substrate including a protection element; an insulating layer covering a surface of the semiconductor substrate; a conductive layer disposed in the insulating layer, and extending in a plane that is parallel with the surface of the semiconductor substrate; a passive element formed with an elongated conductor, curved in a plane that is parallel with the conductive layer, and located over the conductive layer; and an input terminal, an output terminal, and a ground terminal exposed in a surface of the insulating layer. One end of the passive element is electrically connected to the input terminal, the other end of the passive element and a high-potential-side terminal of the protection element are electrically connected to the output terminal, and a low-potential-side terminal of the protection element and the conductive layer are electrically connected to the ground terminal.

Protection device

A semiconductor device used in a protection circuit including a thyristor and an LCR circuit which includes a coil L, a capacitor C and a resistor R, the semiconductor device may include: a semiconductor layer in which the thyristor is provided; an insulating film provided on the semiconductor layer; and a pair of electrodes provided on the insulating film and connected to a protection target circuit, wherein at least one of the coil L, the capacitor C and the resistor R is provided in the insulating film, and the at least one of the coil L, the capacitor C and the resistor R is connected to an anode of the thyristor by a first metal wire filling a first hole provided in the insulating film.

Semiconductor device

An exhaust structure includes a first exhaust path and a second exhaust path. The first exhaust path includes a box outlet and at least an exhaust duct that includes a duct inlet arranged below a rear seat and configured to open toward a battery A. The second exhaust path is communicated with the box outlet. A deck board is disposed in a luggage room. The second exhaust path includes space defined by a front end portion of the deck board closer to a front of a vehicle and at least a portion of the backrest of the rear seat and a gap defined by a front surface of the front end portion of the deck board and a portion of a back surface of the backrest opposite the front surface. Gas used for cooling down the battery is released from the gap to the luggage room via a duct exhaust conduit, a box exhaust conduit, a first interspace exhaust conduit, and a second interspace exhaust conduit.

Exhaust structure for vehicle

A vehicular exhaust structure is provided for exhausting gas used for cooling down a battery arranged under a seat in a vehicle into a luggage compartment of the vehicle behind the seat and including an underfloor storage box arranged under a deck board. The structure includes an exhaust duct and an exhaust conduit. The exhaust duct is arranged behind the battery with an inlet thereof located at a first end facing the battery and an outlet thereof located at a second end facing upward. The exhaust conduit includes a box section communicated with the outlet of the exhaust duct and defined by surfaces of a front portion of the underfloor storage box arranged over the outlet of the exhaust duct. One of the surfaces faces a back surface of a backrest of the seat and has a through hole that opens toward a front side of the vehicle.

Vehicular exhaust structure

A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 &#x3bc;m or more over the top surface of the insulating region. The insulating region includes, in its interior, a dielectric region having a relative dielectric constant lower than that of the insulating region.

Semiconductor device and a method for producing the same

In a semiconductor device such as MOSFET, a single crystal semiconductor substrate is provided. An epitaxitial layer is formed on the single crystal semiconductor substrate. A p-well regions are formed on the epitaxitial layer, respectively, and nsource regions are formed on the p-well regions, respectively. A gate electrode is formed through a gate insulation film on a part of each p-well region and that of each nsource region. The gate electrode is covered with an insulation film. On the insulation film, a source electrode is formed so that the n-channel MOSFET includes body diodes BD imbedded therein. A drain electrode is formed on the single crystal semiconductor substrate. A cluster-containing layer is implanted in the single crystal semiconductor substrate as a gettering layer so that the cluster-containing layer contains a cluster of nitrogen.

A rotation detector that detects rotational position with high precision. The rotation detector includes a rotor having a shaft. Projections are located at predetermined intervals on the periphery of the rotor and extend in an axial direction. The rotation detector further includes magnets and magnetism detecting elements respectively detecting magnetism of the magnets. At least one of the magnets and the detecting elements are arranged between the projections and the shaft at predetermined intervals.

Rotation detector operable to measure magnetism direction change

A method for accurately determining a center of target marks provided on a workpiece. The method involves imaging, at an imaging station, a circular target mark associated with the workpiece. A signal produced by the imaging operation is binary-encoding, in an image processor, and displayed on a monitor screen connected to said image processor. Starting points X1 and X2 of a different level of intensity are detected by scanning in one of either an X-axis direction or a Y-axis direction on a center of a cursor (shown on the monitor screen) when the center of the cursor is within the target mark. Other starting points Y1 and Y2 of a different level of intensity are detected by scanning in another of the X-axis direction or the Y-axis direction on a mid-point of coordinates of the starting points X1 and X2. Still other starting points X1' and X2' of a different level of intensity are detected by scanning, in parallel to the direction of the starting points X1 and X2, on a mid-point of coordinates of the starting points Y1 and Y2. A reference value of a diameter in the X-axis direction and the Y-axis direction of the target mark stored in a memory (ROM) is compared with a distance between Y1 and Y2 and a distance between X1' and X2', in order to determine an intersection point 0 of segments between points Y1 and Y2 and X1' and X2' as the center of the target mark when the comparison matches.

Method for detecting the center of target marks by image processing

Disclosed is a drilling apparatus intended to obtain an image of a drilling mark for detecting the center of the drilling mark, irrespective of the material of a work (transparent material or nontransparent material). The drilling apparatus includes: a working table on which a work having a drilling mark is set; a lower lighting element provided under the working table for emitting a light to the drilling mark through a drill port; an upper lighting element for emitting a light to the drilling mark from the upper side; a camera unit provided on the working table for receiving a transmission image of the drilling mark emitted by the lower lighting element and a reflection image of the drilling mark emitted by the upper lighting element; an image processing unit for processing an image signal received by the camera unit into a binary signal and searching the binary image for detecting the center of the drilling mark; a drill; and a feed mechanism communicating with to the image processing apparatus and the drill for correctively moving the drill to the center position of the drilling mark in the X and Y directions and allowing the drill to drill the work at the center of the drilling mark, wherein the lower lighting element and the upper lighting element are switchable to each other.

Drilling apparatus

Growing community of inventors

Aichi-ken, Japan

Takashi Suzuki