Hamamatsu-Photonics K.k.

Yamaha Corporation

Kabushiki Kaisha Kawai Gakki Seisakusho

Kawai Musical Inst. Mfg. Co., Ltd.

Kao Corporation

Suzuki Motor Corporation

Nihon Plast Co., Ltd.

Shizuoka Prefectural University Corporation

Terumo Kabushiki Kaisha

Taiho Kogyo Co., Ltd.

Shizuoka University

Kawai Musical Instrument Mfg. Co., Ltd.

Yamasa Corporation

Hirosaki University

Taiho Kogyo., Ltd.

Takashi Suzuki

Mitsuhito Mase

Seiichiro Mizuno

Jun Hiramitsu

Fumitsugu Fukuyo

Koji Kawai

Tomohiro Yamazaki

Yoshinori Honda

Hiroyuki Taketomi

Mitsutaka Takemura

Hidetsugu Takaoka

Yutaka Washiyama

Akihiro Shimada

Katsushi Ishii

Tetsuya Taka

Norio Ichikawa

Shucheng Chu

Tokiharu Ando

Yoshitaka Terada

Takeaki Hattori

Ilpal Jwa

Itsushi Tadamasa

Hideo Suzuki

Kotaro Terada

Masaaki Okabayashi

Junichi Fujimori

Tatsuhiko Fukuoka

Masaru Aiso

Yukinobu Sugiyama

Hiroyuki Iwase

Yoshimaro Fujii

Takamitsu Aoki

Kei Nakayama

Shinya Sakurada

Akira Sakamoto

Takuro Sone

Toshitada Noguchi

Taichi Kosugi

Seiji Okamoto

Mitsuru Fukui

Tomoki Hamamoto

Hiromi Deguchi

Yasuo Kageyama

Yukio Imai

Chikara Ohyama

Tohru Yoneyama

Masanori Sahara

Masazumi Iwashita

Shintaro Onishi

Yusuke Ohba

Takuya Mori

Yuki Tobisawa

Shigeki Kimura

Taiichi Usui

Takeomi Murata

Eiichi Tamura

Yuuki Kurebayashi

Yuji Kasamatsu

Shingo Hatakeyama

Maho Yamaguchi

Sayoko Ikeda

Sadao Ishikawa

Yasushi Obayashi

Yashikoi Okamura

Takeshi Funada

Provided is a method for efficiently proliferating an influenza virus serving as a material for vaccine in a host. A method for proliferating an influenza virus in a host, comprising a step of inhibiting transfer of Bax in a host cell to the inner mitochondrial membrane.

Proliferation method

The present embodiment relates to a distance sensor configured to inject an equal amount of current into storage nodes coupled, respectively, to charge collection regions where charges of a photosensitive region is distributed by driving of first and second transfer electrodes and obtain a distance to an object based on difference information on charge amounts of the respective storage nodes. Saturation caused by disturbance light of each storage node is avoided by injecting the equal amount of current to each storage node, and the difference information on the charge amounts of the respective storage nodes, which is not easily affected by the current injection, is obtained by driving the first and second transfer electrodes according to the plurality of frames representing the electrode drive pattern, respectively.

Distance sensor, and method for driving distance sensor

Provided are a nobiletin composition having excellent solubility in water and a method for simply producing the same. A method for producing a solid dispersion containing nobiletin, the method involving a step of dissolving nobiletin or a nobiletin-containing substance and a water-soluble hesperidin derivative selected from the group consisting of glucosyl hesperidin and methyl hesperidin in an ethanol aqueous solution having an ethanol concentration of from 20 to 90 vol % and a step of drying the solution.

Method for producing solid dispersion containing nobiletin

The present embodiment relates to a distance sensor that reduces a difference in amounts of current injected into each of plural charge collection regions prepared for one photosensitive region in order to avoid saturation caused by disturbance light. A current injection circuit injecting current into each charge collection region includes a voltage generation circuit generating a control voltage for adjustment of the injected current amount, and the voltage generation circuit generates the control voltage corresponding to a large amount of charge between the charge amounts of storage nodes coupled, respectively, to the charge collection regions. Meanwhile, a cascode device is disposed between a transistor configured to adjust the amount of current according to the control voltage and the storage node, and a potential of a current output end of the transistor and a potential of the storage node are separated.

Distance sensor

An engine control method for the straddle-type vehicle including a non-driving wheel state determination step of determining whether a front wheel of the straddle-type vehicle is in a substantially stopped state, a driving wheel state determination step of determining whether a rear wheel of the straddle-type vehicle is in a substantially rotating state, and an engine stop control step of performing an engine stop control of the straddle-type vehicle. In the engine stop control step, the engine stop control of the straddle-type vehicle is performed when it is determined that the front wheel is in the substantially stopped state in the non-driving wheel state determination step, and the rear wheel is in the substantially rotating state in the driving wheel state determination step.

Engine control method and engine control device for straddle-type vehicle

A solid-state imaging device includes a photodetecting unit and a signal readout unit, and further includes a control unit controlling an operation of each of the photodetecting unit and the signal readout unit. The photodetecting unit includes M&#xd7;N pixels on a first principal surface of a semiconductor substrate having the first principal surface and a second principal surface opposite to each other. Each pixel includes a plurality of buried photodiodes, a capacitance portion a plurality of transfer switches, and an output switch.

Solid-state imaging device

The method for distinguishing between prostate carcinoma and benign prostatic hyperplasia comprising: bringing an analyte sample containing a prostate-specific antigen (PSA) into contact with a carrier having an anti-free PSA antibody immobilized thereon, thereby binding free PSA to the anti-free PSA antibody immobilized on the carrier; thereafter bringing the carrier in which the free PSA is bound to the immobilized anti-free PSA antibody into contact with a monoclonal antibody capable of specifically recognizing a glycan in which a terminal sialic acid residue is bound to galactose through an &#x3b1;(2,3) bond, thereby binding the monoclonal antibody recognizing the glycan to the free PSA bound to the anti-free PSA antibody; measuring the amount of the free PSA having an N-type glycan in which a terminal sialic acid residue is bound to galactose through an &#x3b1;(2,3) bond; comparing the measured amount thus obtained with a preset cutoff value for prostate carcinoma and benign prostatic hyperplasia, thereby determining that when the measured amount is larger than the cutoff value, prostate carcinoma is developed or the probability of developing prostate carcinoma is high, and when the measured amount is smaller than the cutoff value, benign prostatic hyperplasia is developed or the probability of developing benign prostatic hyperplasia is high.

Method and kit for distinguishing between prostate carcinoma and benign prostatic hyperplasia

An air flow direction adjusting device is provided with a first rear fin and a second rear fin which are adjacent to each other. At a rear fin main body of the first rear fin of these two rear fins that are adjacent to each other, a protrusion portion is provided in a thickness direction. At a rear fin main body of the second rear fin of the above two rear fins that are adjacent to each other, a recessed portion configured to close a gap between the first rear fin and the second rear fin that are adjacent to each other by the recessed portion coming into contact with the protrusion portion is provided in proximity to a rear turning shaft portion.

Air flow direction adjusting device and vehicle air conditioning device

A mounting structure of two resin components includes a primary component including an insertion piece extendedly provided from a base portion, and an engagement recessed portion formed in the insertion piece; and a secondary component formed capable of being mounted to the primary component and including an insertion portion configured to guide the insertion piece formed at the base portion, an engagement protruding portion formed in the insertion portion and configured to fit into the engagement recessed portion of the insertion piece, and a restriction wall configured to cover a root side of the insertion piece inserted into the insertion portion, and in a top plan view, a width of the restriction wall being gradually decreased toward a direction separating from a side where the primary component is mounted.

Mounting structure of resin components

A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer, disposed on the substrate, for generating ultraviolet light in response to an electron beam. The light-emitting layer includes a powdery or granular oxide crystal containing Lu and Si doped with an activator (e.g., Pr:LPS and Pr:LSO crystals).

Target for ultraviolet light generation, electron beam-excited ultraviolet light source, and production method for target for ultraviolet light generation

A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer disposed on the substrate and generating ultraviolet light UV in response to an electron beam. The light-emitting layer includes a powdery or granular rare-earth-containing aluminum garnet crystal doped with an activator. The light-emitting layer has an ultraviolet light emission peak wavelength of 300 nm or shorter.

A distance sensor includes: a light receiving area including a first longer side and a second longer side; a photo gate electrode arranged on the light receiving area; a plurality of signal charge collection regions along the first longer side; a plurality of signal charge collection regions along the second longer side; a plurality of transfer electrodes along the first longer side provided with charge transfer signals having mutually-differing phases; a plurality of transfer electrodes along the second longer side provided with the charge transfer signals having mutually-differing phases; and a potential adjusting means positioned between the first and second longer sides and raises potential of an area extending in a direction in which the first and second longer sides extend to be higher than potential of side areas of the first and second longer sides.

Distance sensor and distance image sensor

A light receiving region has a planar shape of a rectangular shape having a pair of long sides opposed to each other in a first direction and a pair of short sides opposed to each other in a second direction. First and second semiconductor regions are arranged as spatially separated from each other along the respective long sides. First and second gate electrodes are arranged each between the corresponding semiconductor region and the light receiving region. Third gate electrodes are arranged as spatially separated from each other between the first and second gate electrodes arranged along the long sides. Each of the third gate electrodes has a first electrode portion located between a third semiconductor region and the light receiving region, and a second electrode portion overlapping with the light receiving region and having a width in the second direction smaller than that of the first electrode portion.

Range sensor and range image sensor

An ultraviolet light generating targetincludes a substratemade of sapphire, quartz, or rock crystal; and a light-emitting layerthat is provided on the substrateand that generates ultraviolet light upon receiving an electron beam. The light-emitting layerincludes powdered or granular Pr:LuAG crystals. By using such a light-emitting layeras the target, the ultraviolet light generating efficiency can be increased more remarkably than when a Pr:LuAG single crystal film is used.

Ultraviolet light generating target, electron-beam-excited ultraviolet light source, and method for producing ultraviolet light generating target

A semiconductor light detecting element is provided with a silicon substrate having a semiconductor layer, and an epitaxial semiconductor layer grown on the semiconductor layer and having a lower impurity concentration than the semiconductor layer; and conductors provided on a surface of the epitaxial semiconductor layer. A photosensitive region is formed in the epitaxial semiconductor layer. Irregular asperity is formed at least in a surface opposed to the photosensitive region in the semiconductor layer. The irregular asperity is optically exposed.

Semiconductor light detecting element having silicon substrate and conductor

Growing community of inventors

Hamamatsu, Japan

Takashi Suzuki