Other

Kabushiki Kaisha Watanabe Shoko

Takashi Sugino

Hitoshi Sakamoto

Noriaki Ueda

A plasmais generated within a film formation chamber, and mainly a nitrogen gasis excited within the film formation chamber. Then, the excited nitrogen gasis mixed with a diborane gasdiluted with a hydrogen gas to react them, thereby forming a boron nitride filmon a substrate. At the initial stage of film formation, the nitrogen gasis supplied in excess to suppress the occurrence of an amorphous phase on the interface. As a result, the boron nitride filmimproved in moisture absorption resistance on the interface with the substrate and maintaining low dielectric constant properties is formed.

Film forming method and film forming device

A plasmais generated within a film formation chamber, and mainly a nitrogen gasis excited within the film formation chamber. Then, the excited nitrogen gasis reacted with a diborane gasdiluted with a hydrogen gas, thereby forming a boron nitride filmon a substrate. Thus, the boron nitride filmexcellent in mechanical and chemical resistance, high in thermal conductivity, and having a low relative dielectric constant &#x3ba; can be formed speedily.

Growing community of inventors

Toyonaka-shi, Osaka, Japan

Takashi Sugino