Tokyo Electron Limited

Takashi Sone

Eiichi Nishimura

Fumiko Yamashita

Masato Kushibiki

Nao Koizumi

Akitaka Shimizu

Tadashi Kotsugi

Keiichi Shimoda

Mitsuru Hashimoto

Daisuke Urayama

Wataru Kume

A plasma processing method of etching a multilayered material having a structure where a first magnetic layerand a second magnetic layerare stacked with an insulating layertherebetween is performed by a plasma processing apparatusincluding a processing chamberwhere a processing space S is formed; and a gas supply unitof supplying a processing gas into the processing space, and includes a first etching process where the first magnetic layer is etched by supplying a first processing gas and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process where a residue Z is removed by supplying a second processing gas and generating plasma. The first magnetic layer and the second magnetic layer contain CoFeB, the first processing gas contains Cl, and the second processing gas contains H.

Plasma processing method and plasma processing apparatus

Provided is a method for etching an etching target layer of a workpiece. The workpiece has a mask on the etching target layer. The etching target layer and the mask are formed from respective materials for which etching efficiency by a plasma of a rare gas having an atomic number greater than an atomic number of argon is higher than etching efficiency for the materials by a plasma of argon gas. The mask is formed from a material having a melting point higher than that of the etching target layer. The method includes (a) exposing the workpiece to a plasma of a first process gas containing a first rare gas having an atomic number greater than the atomic number of argon, and (b) exposing the workpiece to a plasma of a second process gas containing a second rare gas having an atomic number less than the atomic number of argon.

Method for etching layer to be etched

A gas for an etching process and a treatment process of a metal stacked film in which an insulating layer is interposed between two layers of magnetic materials can be optimized. An etching method of etching a multilayered film including a metal stacked film in which an insulating layer is interposed between a first magnetic layer and a second magnetic layer includes etching the metal stacked film with plasma generated by supplying a gas containing at least C, O, and H into a processing chamber; and treating the metal stacked film with plasma generated by supplying a gas containing at least a CFgas into the processing chamber.

Etching method and substrate processing apparatus

A method of etching a copper layer of a target object including, on the copper layer, a mask having a pattern to be transferred onto the copper layer is provided. The method includes etching the copper layer by using plasma of a first gas containing a hydrogen gas; and processing the target object by using plasma of a second gas containing a hydrogen gas and a gas (hereinafter, referred to as 'deposition gas') that is deposited on the target object. Further, the etching of the copper layer by using plasma of the first gas and the processing of the target object by using plasma of the second gas are repeated alternately.

Method of etching copper layer and mask

A plasma processing method is used to etch a multilayered material having a stacked structure, in which a first magnetic layer, an insulating layer, a second magnetic layer, and a mask material are stacked in sequence, in a plasma processing apparatus including a processing chamber that partitions a processing space where plasma is generated and a gas supply unit that supplies a processing gas into the processing space. The plasma processing method includes a mask forming process of forming a mask on the second magnetic layer by etching the mask material; an etching process of supplying the processing gas into the processing chamber to generate plasma, etching the second magnetic layer by the mask, and stopping the etching on a surface of the insulating layer. Further, the second magnetic layer contains CoFeB, the insulating layer contains MgO, and the processing gas contains Hand F or a fluorine compound.

A method for performing dry etching on a metal film containing Pt via a mask layer includes performing dry etching on the metal film by generating a plasma of an etching gas including a gaseous mixture of Hgas, COgas, methane gas and rare gas. With the dry etching method, it is possible to make a vertical sidewall of a hole or trench more vertical without using a halogen gas.

Dry etching method for metal film

In a substrate processing method, a polysilicon layeron a wafer W is etched with a bromine cationand a bromine radicalin plasma generated from a processing gas containing a hydrogen bromide gas, an oxygen gas, and a nitrogen trifluoride gas, and then, is ashed with an oxygen radicaland a nitrogen radicalin plasma generated from a processing gas containing an oxygen gas and a nitrogen gas. Thereafter, the polysilicon layeris etched with a fluorine cationand a fluorine radicalin plasma generated from a processing gas containing an argon gas and a nitrogen trifluoride gas. While the polysilicon layeris ashed, an oxidation process is performed on a silicon bromide generated by etching the polysilicon layerwith the bromine cation

Substrate processing method and storage medium

There is provided a substrate processing method capable of etching a layer containing, at least, platinum without using a halogen gas. When etching the platinum-manganese layer on a wafer W by using a tantalum (Ta) layerhaving a certain pattern shape, a processing gas containing, at least, a carbon monoxide gas, a hydrogen gas, and a rare gas is used, and a ratio of a gas flow rate of the hydrogen gas to a total gas flow rate of the carbon monoxide gas and the hydrogen gas is in a range of from about 50% to about 75%.

A substrate processing method for processing a substrate, on which a processing target layer, an intermediate layer, and a mask layer having an opening to expose a part of the intermediate layer are stacked in this order, includes a shrink etching step. In the shrink etching step, an opening width of the opening of the mask layer is reduced by depositing deposits on a sidewall surface thereof by a plasma generated from a gaseous mixture of depositive gas expressed by a general formula CHF(x, y and z being positive integers) and SFgas. Also, there is formed in the intermediate layer an opening having an opening width corresponding to the reduced opening width of the opening of the mask layer by etching the intermediate layer.

Substrate processing method

A disclosed fine pattern forming method includes steps of: forming patterns made of a first photoresist film, arranged at a first pitch on a film; trimming the patterns made of the first photoresist film; depositing a protection film on the patterns made of the first photoresist film on the trimmed patterns made of the first photoresist film, the protection film being made of reaction products of an etching gas, thereby obtaining first patterns; forming other patterns made of a second photoresist film, arranged at a second pitch, on the protection film, the other patterns made of the second photoresist film being shifted by half of the first pitch from the corresponding patterns made of the first photoresist film; trimming the other patterns made of the second photoresist film into second patterns; and etching the film using the first patterns and the second patterns.

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Miyagi, Japan

Takashi Sone