Panasonic Corporation

Sanyo Electric Co., Ltd.

Takashi Shimada

Kunihiko Bessho

Kazuyoshi Honda

Yasutaka Kogetsu

A negative electrodefor lithium secondary batteries, which can increase the charge/discharge capacity of a lithium secondary battery, includes a negative electrode current collector, a negative electrode active material layer, and a lithium layer. The negative electrode active material layer is disposed on regions and of the respective surfaces and of the negative electrode current collector. The lithium layer is disposed on uncovered regions and, which are regions of the respective surfaces and of the negative electrode current collector on which the negative electrode active material layer is not disposed. The lithium layer includes lithium.

Negative electrode for lithium secondary batteries, lithium secondary battery, and method for producing the negative electrode for lithium secondary batteries

The present invention provides a thin film manufacturing method which realizes stable, highly-efficient film formation using a nozzle-type evaporation source while avoiding unnecessary scattering and deposition of a film formation material before the start of the film formation. Used is a film forming apparatus including: an evaporation chamber; a film forming chamberin which a substrateis provided; an evaporation sourceholding a film formation materialand including an opening surface; a moving mechanismconfigured to cause the evaporation sourceto move; and a conductance variable structure. The film forming chamberand the evaporation chamberare evacuated. In a state where the differential pressure between these chambers can be secured by the conductance variable structure, the nonreactive gas is introduced to the evaporation chamberto adjust the pressure in the evaporation chamberto predetermined pressure or more. Thus, the evaporation of the film formation material is suppressed. In the same state as above, the nonreactive gas is introduced to the film forming chamberto adjust the pressure in the film forming chamberto the predetermined pressure or more. The conductance variable structureis activated to cancel the above state. Then, the evaporation sourceis moved by the moving mechanism, so that the opening surfaceis located close to the substrate. The pressure in each chamber is decreased to less than the predetermined pressure. Thus, the suppression of the evaporation of the film formation material is canceled, and the film formation is started.

Method of manufacturing thin film which suppresses unnecessary scattering and deposition of a source material

The present invention provides a thin film manufacturing method which realizes stable, highly-efficient film formation using a nozzle-type evaporation source while avoiding unnecessary scattering and deposition of a film formation material after the termination of the film formation. Used is a film forming apparatus including: an evaporation chamber; a film forming chamberin which a substrateis provided; an evaporation sourceholding a film formation materialand including an opening surface; a moving mechanismconfigured to cause the evaporation sourceto move; and a conductance variable structure. The film formation is performed in a state where the opening surfaceof the evaporation sourceholding the heated film formation material is located close to the substratewhile evacuating the evaporation chamberand the film forming chamberwithout shutting off communication between the evaporation chamberand the film forming chamberby the conductance variable structure. Next, the evaporation of the film formation material is suppressed by introducing a nonreactive gas to the evaporation chamberand the film forming chamberto adjust pressure in each chamber to predetermined pressure or more. Then, the evaporation sourceis moved by the moving mechanismsuch that the opening surfaceis located away from the substrate. The conductance variable structure is activated to shut off the communication between these chambers, and the film formation material is cooled while continuously introducing the nonreactive gas to the evaporation chamber

Growing community of inventors

Osaka, Japan

Takashi Shimada