Idemitsu Kosan Company, Limited

Sony Corporation

Takashi Sekiya

Emi Kawashima

Yuki Tsuruma

Yoshihiro Ueoka

Shigekazu Tomai

Motohiro Takeshima

Jiro Yamada

Hiroaki Nakamura

Yoshikazu Nagasaki

A laminated body comprising a substrate, one or more layers selected from a contact resistance reducing layer and a reduction suppressing layer, a Schottky electrode layer and a metal oxide semiconductor layer in this order.

Laminated body

A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.

Structure, method for manufacturing same, semiconductor element, and electronic circuit

A semiconductor devicewhich comprises a pair of an ohmic electrodeand a Schottky electrodeseparated from each other, and a semiconductor layerin contact with the ohmic electrodeand the Schottky electrode, and which satisfies the following formula (I): in which n is a carrier concentration (cm) of the semiconductor layer, &#x3b5; is a dielectric constant (F/cm) of the semiconductor layer, Vis a forward effective voltage (V) between the ohmic electrode and the Schottky electrode, q is an elementary charge (C), and L is a distance (cm) between the ohmic electrode and the Schottky electrode.

Semiconductor device and electric apparatus using same

A laminated body comprising a substrate, an ohmic electrode layer, a metal oxide semiconductor layer, a Schottky electrode layer and a buffer electrode layer in this order, wherein a reduction suppressing layer is provided between the Schottky electrode layer and the buffer electrode layer.

Laminated article

A bottom-contact type organic thin film transistor comprising at least a gate electrode, an insulator layer, a source electrode, a drain electrode and an organic semiconductor layer, on a substrate, wherein at least one of the source electrode and the drain electrode has a multilayer structure formed by stacking an oxide layer and a metal layer, and the metal layer is surface-modified with an organic thin film layer.

Organic thin-film transistor

A fluorescence conversion medium comprising, a fluorescent fine particle formed of an inorganic nanocrystal which absorbs visible and/or near ultraviolet light and emits visible fluorescence, and a transparent medium which disperses the fluorescent fine particle therein, an absorbance at a wavelength where the fluorescent intensity is maximized being in the range of 0.1 to 1.

Growing community of inventors

Sodegaura, Japan

Takashi Sekiya