Kabushiki Kaisha Toshiba

Mitsubishi Gas Chemical Company, Inc.

Toshiba Memory Corporation

Kioxia Corporation

Fujitsu Component Limited

Fujitsu Corporation

The Yokohama Rubber Co., Ltd.

Mitsubishi Chemical Corporation

Fuji Photo Film Company, Limited

Asahi Kasei Kogyo Kabushiki Kaisha

Asahi Kasei Kabushiki Kaisha

A School Corporation Kansai University

Toshiba Energy Systems & Solutions Corporation

Takashi Sato

Masatoshi Echigo

Takumi Toida

Takashi Makinoshima

Shuichi Ueno

Takashi Sakamoto

Katsuya Okumura

Masafumi Asano

Takeshi Koyama

Fujio Seki

Akiko Yamada

Hideki Kanai

Taishi Kawasaki

Junichiro Iba

Heiichi Sugino

Seiji Morita

Soichi Inoue

Masaru Suzuki

Tetsuya Takahashi

Keiji Matsumoto

Tsutomu Takahashi

Hisao Hayashi

Osamu Ozawa

Masanori Takahashi

Ryoichi Inanami

Hiroko Nakamura

Shigeru Sasaki

Satoshi Mitsugi

Ryosuke Yamamoto

Shigeki Takayama

Hirokazu Saito

Masato Fujita

Atsushi Okoshi

Masahiro Sasagawa

Akiko Mimotogi

Masato Yamada

Hiroyuki Kashiwagi

Go Tanaka

Hironobu Kageyama

Youko Shimizu

Takeshi Suto

Hirohide Oikawa

Yoshihiro Kojima

Hisaki Sato

Yasunobu Fujiki

Makoto Akinaga

Kazunori Hashimoto

Junichiro Otonari

Tomoyuki Hongoh

Kazuto Matsuki

Ayako Nakano

Yukiyasu Arisawa

Yuka Suzuki

Koichi Namimatsu

Hiroshi Yamaji

Eiji Sasaya

Kiyoo Kato

Yuji Komori

Hirofumi Kashiwara

Masato Ozawa

Mika Tahara

Jun Yonezawa

Tomohiro Sugawara

Minoru Tanaka

Ryoichi Hamazaki

Takuya Miyagawa

Tomio Suzuki

Shigeru Amagasa

Tomohisa Kurita

Hiroto Kudo

Mitsuko Shimizu

Seiichi Yokobori

Yasuyuki Kuno

Seiichi Yukawa

Kiyoyuki Ushirokozi

Nobutoshi Aoyagi

Katuyuki Saita

Tadashi Naito

Harumi Takeda

Takamasa Takaki

Masanori Ino

Naoko Matsunaga

Yuki Chiba

Koki Watanabe

Ryoichi Susuki

Yuzo Kato

According to one embodiment, a measurement method includes generating mark position information, determining at least one of a first arrangement pattern or a second arrangement pattern, and calculating displacement between a first member and a second member. The mark position information is generated after the second member is formed on the first member, and indicates a relative positional relationship between a first alignment mark formed on the first member and including bright portions and dark portions, and a second alignment mark formed on the second member and including the bright portions and the dark portions. The first arrangement pattern indicates an arrangement pattern of bright portions and dark portions of the first alignment mark. The second arrangement pattern indicates an arrangement pattern of the bright portions and the dark portions of the second alignment mark. The first arrangement pattern is determined on the basis of captured data of a reference mark formed in a region different from the region where the first alignment mark is formed and the region where the second alignment mark is formed. The displacement is calculated on the basis of the mark position information and at least one of the first arrangement pattern or the second arrangement pattern.

Measurement method, measurement apparatus, and mark

A template of one embodiment includes an alignment mark. The alignment mark includes a first main pattern and a first auxiliary pattern. In the first main pattern, a first part and a second part are disposed according to a predetermined repeating pattern. The first auxiliary pattern is configured as a pattern opposite to the repeating pattern in a region outside an end of the first main pattern.

Template, workpiece, and alignment method

A material for lithography containing a tellurium-containing compound or a tellurium-containing resin, a production method therefor, a composition for lithography, a pattern formation method, a compound, a resin, and a method for purifying the compound or the resin are provided. The compounds and materials can provide for high solubility in a safe solvent.

Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin

According to one embodiment, a template includes an alignment mark. The alignment mark includes first marks arranged at a first pitch in a first direction and second marks arranged at a second pitch in the first direction. At least one of the first marks includes a first region and a third region. At least one of the second marks includes a second region and the third region. The first region has first patterns arranged in a line-and-space form in the first direction. The second region has second patterns arranged in a line-and-space form in a second direction orthogonal to the first direction.

The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent: 

Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method

The present invention is a compound represented by the following general formula (1). 

Resist composition, method for forming resist pattern, and polyphenol compound used therein

The resist composition of the present invention contains one or more selected from compounds represented by specific formulae and resins obtained using these as monomers.

Compound, resist composition, and method for forming resist pattern using it

The present embodiment provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1), wherein Rrepresents a 2n-valent group having 1 to 60 carbon atoms, or a single bond, each Rindependently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, a hydroxyl group, or a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, and may be the same or different in the same naphthalene ring or benzene ring, in which at least one Rrepresents a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, n is an integer of 1 to 4, and structural formulae of n structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each mis independently an integer of 0 to 7, provided that at least one mis an integer of 1 to 7, and each q is independently 0 or 1.

Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method

The present invention provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1), wherein Rrepresents a 2n-valent group having a 1 to 60 carbon atoms, or a single bond, each Rindependently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, or a hydroxyl group, and may be the same or different in the same naphthalene ring or benzene ring, n is an integer of 1 to 4, structural formulae of n's structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each m2 is independently an integer of 0 to 7, in which at least one mis an integer of 1 to 7, and each q is independently 0 or 1, provided that at least one selected from the group consisting of Rand Ris a group having an iodine atom.

Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method

The present invention employs a compound represented by the following formula (0): 

Compound, resin, composition, resist pattern formation method, and circuit pattern formation method

In one embodiment, a pattern forming method includes forming a first film on a substrate. The method further includes supplying energy to the first film to form a first region to which the energy have been supplied, and a second region including at least a region to which the energy has not been supplied. The method further includes impregnating at least the first region out of the first and second region with metal atoms. The method further includes developing the first film after impregnating the first region with the metal atoms to remove the second region while leaving the first region.

Pattern forming method and method of manufacturing semiconductor device

According to one embodiment, an imprint method is provided. In the imprint method, a template including a mechanoluminescent material is brought into contact with a resist on a substrate. The posture of the template is adjusted on the basis of the intensity of mechanoluminescence from the template. Light is emitted to the resist to harden the resist. The template is separated from the resist.

Imprint method, imprint apparatus, and template

A compound represented by the following formula (1): 

Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method

The present invention provides a resist base material containing a compound having a specific structure and/or a resin derived from the compound as a monomer.

Resist base material, resist composition and method for forming resist pattern

Growing community of inventors

Kanagawa, Japan

Takashi Sato