Tokyo Electron Limited

Takashi Sameshima

Koji Maekawa

Katsumasa Yamaguchi

Atsushi Matsumoto

Shintaro Aoyama

Susumu Arima

Mikio Suzuki

Naoki Shibata

There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.

Tungsten film-forming method, film-forming system and storage medium

A film forming method includes forming a cancel layer on a substrate, which is disposed within a processing container and on which a base film is formed, in a pressure-reduced atmosphere, the cancel layer cancelling orientation of the base film, forming an initial metal film by supplying a metal material gas and a boron-containing gas to the substrate on which the cancel layer is formed, and forming a main metal film on the substrate on which the initial metal film is formed.

Film forming method and film forming system

There is provided a film forming method including: forming an Al-containing film on a base in a depressurized state; and subsequently, forming an initial tungsten film on the Al-containing film by alternately supplying a BHgas and a WFgas in a repetitive manner in the depressurized state without exposing the Al-containing film to an atmosphere while performing a purge process between the supply of the BHgas and the supply of the WFgas.

Film forming method and substrate processing system

A method of forming a tungsten film on a surface of a target substrate having a base film is performed by repeating a cycle plural times. The cycle includes alternately supplying a tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas, with a purge interposed therebetween, into a process container in which the target substrate is accommodated and that is maintained under a depressurized atmosphere. The method includes setting a supply flow rate of the tungsten chloride gas and a time of the cycle such that a ratio of a thickness of the base film etched by repeating the cycle the plural times to a thickness of the base film before repeating the cycle the plural times becomes smaller than a predetermined ratio in a state where an integrated flow rate of the tungsten chloride gas per one cycle is kept substantially constant.

Method of forming film

A method of forming a tungsten film having low resistance is provided. The method includes forming a discontinuous film containing a metal on a substrate; and forming the tungsten film on the substrate on which the discontinuous film is formed. In the forming of the discontinuous film, a first source gas and a nitriding gas are supplied onto the substrate alternately along with, for example, a carrier gas. In the forming of the tungsten film, a second source gas and a reducing gas are supplied onto the substrate alternately along with, for example, a carrier gas.

Method of forming tungsten film

A tungsten film forming method in which a substrate having a TiN film formed thereon is disposed in a processing container and a tungsten film is formed above a surface of the substrate while heating the substrate in a reduced pressure atmosphere, includes forming a first film of an aluminum-containing material on the substrate and forming the tungsten film on the first film.

Tungsten film forming method, film forming system and film forming apparatus

There is provided a tungsten film forming method which includes: forming a first tungsten film on a substrate; and forming a second tungsten film on the first tungsten film. The forming a first tungsten film includes alternately supplying a first raw material gas containing tungsten and a diborane gas together with a first carrier gas to the substrate. The forming a second tungsten film includes alternately supplying a second raw material gas containing tungsten and a hydrogen gas together with a second carrier gas to the substrate on which the first tungsten film is formed. The first carrier gas is a nitrogen gas. The second carrier gas includes at least one kind of nobel gas and has the noble gas at a flow rate of 70% or more with respect to a total flow rate of the second carrier gas.

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Nirasaki, Japan

Takashi Sameshima