Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Olympus Corporation

Olympus Optical Company, Ltd.

Takashi Ozaki

Kiyohiko Maeda

Takeaki Nakamura

Akinobu Uchikubo

Katsuyoshi Harada

Yoshitomo Hashimoto

Kenichi Suzaki

Hideki Horita

Masaya Nagato

Yoshiro Hirose

Yoshikazu Takashima

Shinya Morita

Tomoshi Taniyama

Masakazu Gotanda

Koichi Tashiro

Masato Terasaki

Kazuhiro Yuasa

Risa Yamakoshi

Sadao Hisakado

Kimihiko Nakatani

Tomohisa Sakurai

Naonori Akae

Keiji Shioda

Hiroyuki Takahashi

Satoshi Shimamoto

Takaaki Noda

Takafumi Sasaki

Norikazu Mizuno

Atsushi Moriya

Ken Suzuki

Norihiko Hareyama

Junichi Onishi

Makoto Tsunakawa

Seiyo Nakashima

Unryu Ogawa

Daisuke Sano

Kazunori Taniguchi

Atsushi Hirano

Masanori Okuno

Yuji Urano

Tomoyuki Yamada

Kiyoshi Sekiguchi

Tomiyuki Shimizu

Keigo Nishida

Hiroshi Unami

Makoto Miyawaki

Masaru Sudo

Masaya Fujita

Takahiro Maeda

Yasunobu Koshi

Masakazu Sakata

Osamu Kasahara

Yugo Koizumi

Toshihiko Yonejima

Kenji Kanayama

Satoshi Honma

Akihito Yoshino

Takeshi Kasai

Masayuki Yamada

Takechiyo Nakamitsu

Yoshia Hoshino

Tatsuya Yotsutani

Kenichi Ishiguro

Nobuyuki Furukawa

Masaru Ito

Katsuaki Nogami

Hiroki Okamiya

Kyo Imagawa

Hiroyuki Mino

Jiro Yugami

Takao Tabata

Minoru Sakamoto

Chie Imamiya

There is included forming an oxide film on a substrate by alternately performing: forming the first oxide film containing an atom X by performing a first cycle including non-simultaneously performing forming a first layer including a component in which a first functional group is bonded to the atom X, and forming a second layer containing the atom X and oxygen by oxidizing the first layer; and forming the second oxide film containing the atom X by performing a second cycle including non-simultaneously performing forming a third layer including a component in which the first functional group is bonded to the atom X, and forming a fourth layer containing the atom X and oxygen by oxidizing the third layer, under a processing condition that an oxidizing power is higher than an oxidizing power when oxidizing the first layer.

Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium

Described herein is a technique capable of improving a controllability of a thickness distribution of an oxide film formed on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas to a heated substrate at a first pressure less than an atmospheric pressure and by oxidizing a surface of the substrate; and (b) forming a second oxide layer by supplying the oxygen-containing gas and the hydrogen-containing gas to the heated substrate at a second pressure less than the atmospheric pressure and different from the first pressure and by oxidizing the surface of the substrate on which the first oxide layer is formed.

Method of manufacturing semiconductor device capable of controlling film thickness distribution

There is provided a technique that includes: forming an oxide film containing an atom X of a precursor on a substrate by performing a cycle a predetermined number of times. The cycle including non-simultaneously performing: (a) forming a first layer containing a component in which a first group is bonded to the atom X on the substrate by supplying the precursor having a molecular structure in which the first and second groups are bonded to the atom X, to the substrate, the first group containing an alkoxy group, and the second group containing at least one of an amino group, an alkyl group, a halogeno group, a hydroxy group, a hydro group, an aryl group, a vinyl group, and a nitro group; and (b) forming a second layer containing the atom X by supplying an oxidizing agent to the substrate to oxidize the first layer.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium

There is provided a technique that includes removing a substance adhering to the interior of the process container by performing a cycle a predetermined number of times under a first temperature, the cycle including: (a) supplying one gas of a nitrogen- and hydrogen-containing gas and a fluorine-containing gas into the process container after a substrate is processed; and (b) supplying the other gas different from the one gas of the nitrogen- and hydrogen-containing gas and the fluorine-containing gas into the process container where the one gas remains.

Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes: processing a substrate in a process vessel by supplying a processing gas to the substrate and exhausting the processing gas from an exhaust part including an exhaust pipe and a pump; cleaning an interior of the exhaust part by supplying a first cleaning gas from a supply port installed in the exhaust pipe directly into the exhaust pipe; and cleaning an interior of the process vessel by supplying a second cleaning gas into the process vessel, wherein a frequency of performing the act of cleaning the interior of the exhaust part is set higher than a frequency of performing the act of cleaning the interior of the process vessel.

Method of operating substrate processing apparatus, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes: (a) arranging a plurality of first substrates and a second substrate having a smaller surface area than the first substrates and accommodating the plurality of first substrates and the second substrate in a process chamber; and (b) forming a thin film on each of the plurality of first substrates by supplying a processing gas to a substrate arrangement region in which the plurality of first substrates and the second substrate are arranged, wherein (b) includes: (c) supplying a dilution gas to a first supply region of the substrate arrangement region, or not performing a supply of the dilution gas to the first supply region, and supplying the dilution gas to at least one second supply region of the substrate arrangement region at a flow rate larger than a flow rate of the dilution gas supplied to the first supply region.

There is provided a technique that includes: forming an oxide film containing a central atom X of a precursor on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer containing a component in which a first group is bonded to the central atom X on the substrate by supplying the precursor having a molecular structure in which the first group and a second group are bonded to the central atom X and having a bonding energy between the first group and the central atom X that is higher than a bonding energy between the second group and the central atom X, to the substrate; and (b) forming a second layer containing the central atom X by supplying an oxidizing agent to the substrate to oxidize the first layer, wherein in (a), the precursor is supplied under a condition in which the second group is desorbed and the first group is not desorbed from the central atom X contained in the precursor and the central atom X is adsorbed on a surface of the substrate in a state where the second group is desorbed from the central atom X and the bonding of the first group and the central atom X is maintained.

Method of processing substrate, substrate processing apparatus, recording medium, and method of manufacturing semiconductor device

A medical communication system including a first medical device with a memory storing first additional information to be added to first information related to a subject, a DICOM server, and a second medical device storing second additional information to be added to second information. The first medical device having a processor generating DICOM (Digital Imaging and Communication in Medicine)-format data of the first information, a first transmitter/receiver communicating the second information and at least a portion of the second additional information between the first medical device and the second medical device via a network defined by a prescribed protocol different from the DICOM protocol. The processor generates DICOM-format data of the second information based on at least the second additional information. The second transmitter/receiver communicates generated DICOM-format data of the first information and the second information with the DICOM server via the network defined by the DICOM protocol.

Medical communication system and medical device

There is provided a technique that includes: forming an oxynitride film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a precursor from a precursor supply part to the at least one substrate; (b) supplying an oxidizing agent from an oxidizing agent supply part to the at least one substrate; and (c) supplying a nitriding agent from a nitriding agent supply part to the at least one substrate, wherein in (b), an inert gas is supplied from an inert gas supply part, which is different from the oxidizing agent supply part, to the at least one substrate, and at least one of nitrogen concentration and refractive index of the oxynitride film formed on the at least one substrate is adjusted by controlling a flow rate of the inert gas.

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

A processor includes: a generation unit that generates first-performed-examination identification information in correlation with reserved-examination identification information and generates second-performed-examination identification information in correlation with the reserved-examination identification information, the first-performed-examination identification information being for identifying a first performed examination, the second-performed-examination identification information being for identifying a second performed examination; a recording medium that records a first-performed-examination result accompanied by the first performed-examination identification information and a second-performed-examination result accompanied by the second performed-examination identification information; and a memory that records first count information and second count information, the first count information being related to the number of pieces of data obtained in the first performed examination and associated with the first-performed-examination identification information, the second count information being related to the number of pieces of data obtained in the second performed examination and associated with the second-performed-examination identification information.

Processor, management apparatus, and medical system

There is provided a method of manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate; and supplying a first oxygen-containing gas to the substrate. Further, the act of supplying the precursor gas includes a time period in which the precursor gas and a second oxygen-containing gas are simultaneously supplied to the substrate.

A method of manufacturing a semiconductor device, includes: forming an oxynitride film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate through a first nozzle, supplying a nitriding gas to the substrate through a second nozzle, and supplying an oxidizing gas to the substrate through a third nozzle, wherein in the act of supplying the nitriding gas, an inert gas is supplied from at least one of the first nozzle and the third nozzle at a first flow rate, and in the act of supplying the oxidizing gas, an inert gas is supplied from the second nozzle at a second flow rate larger than the first flow rate.

A configuration capable of increasing an exhaust capability of an apparatus without degrading an operation of the apparatus includes: a processing furnace; an exhaust unit configured to exhaust a gas from a process chamber defined by the processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall; and an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall, wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.

Substrate processing apparatus, exhaust system and method of manufacturing semiconductor device

Growing community of inventors

Toyama, Japan

Takashi Ozaki